Non-volatile Spin-Transfer Torque RAM (STT-RAM): An analysis of chip data, thermal stability and scalability

In this paper, we present a detailed analysis of our latest statistical MTJ switching data and STT-RAM chip results. We analyze STT-RAM thermal stability and, for the first time, compare the thermal stability parameter obtained from pulse-width dependence measurements with that obtained from read disturb measurements. We also analyze the scalability of STT-RAM, and compare the properties of STT-RAM with both in-plane and perpendicular orientations of the MTJ magnetization.