A non contact characterization technique of the defect states of high k dielectrics using THz radiation

The effect of high-k dielectric Hafnium dioxide films on 200 mm diameter p-type silicon substrates is investigated and compared with conventional dielectric material, Silicon dioxide, using terahertz (THz) time- resolved spectroscopy and visible pump/THz probe spectroscopy. The interfacial defect density at the Hf/p+ interface was estimated to be 60-100 times larger than that of Si/p+ interface.