Volume 6 Issue 2 • June 2016
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Table of Contents
Publication Year: 2016, Page(s):C1 - C4|
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IEEE Journal on Emerging and Selected Topics in Circuits and Systems publication information
Publication Year: 2016, Page(s): C2|
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Guest Editorial Emerging Memories—Technology, Architecture and Applications (First Issue)
Publication Year: 2016, Page(s):105 - 108
Cited by: Papers (2) -
An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories
Publication Year: 2016, Page(s):109 - 119
Cited by: Papers (31)This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-torque-transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is descr... View full abstract»
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Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies
Publication Year: 2016, Page(s):120 - 133
Cited by: Papers (11)Spin transfer torque based magnetic memories (STT-MRAMs) are leading contender for the replacement of SRAM caches. However, STT-MRAMs suffer from high write current, read/write stability conflicts and other failure mechanisms. In this paper, we present a comprehensive scaling analysis for STT-MRAMs based on in-plane and perpendicular anisotropy magnets in context to different failure mechanisms. W... View full abstract»
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Comparative Evaluation of Spin-Transfer-Torque and Magnetoelectric Random Access Memory
Publication Year: 2016, Page(s):134 - 145
Cited by: Papers (32)Spin-transfer torque random access memory (STT-RAM), as a promising nonvolatile memory technology, faces challenges of high write energy and low density. The recently developed magnetoelectric random access memory (MeRAM) enables the possibility of overcoming these challenges by the use of voltage-controlled magnetic anisotropy (VCMA) effect and achieves high density, fast speed, and low energy si... View full abstract»
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Recent Progress in Phase-Change Memory Technology
Publication Year: 2016, Page(s):146 - 162
Cited by: Papers (59)We survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high-temperature retention and faster switching. Both materials and new cell designs that support lower-power switching are discussed, as well as higher reliability for long cycling endurance. Two paths towards higher density are discussed: through 3D integration ... View full abstract»
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Self Current Limiting MgO ReRAM Devices for Low-Power Non-Volatile Memory Applications
Publication Year: 2016, Page(s):163 - 170
Cited by: Papers (4)We report an interface engineering approach to achieve a self-compliance controlled and forming-free switching in ReRAM devices based on MgO switching layers. The proposed devices showed scalability in self-compliance current with low set and reset voltages as the interfacial layer thickness was increased. The devices showed write endurance up to 1000 cycles under self-compliance controlled switch... View full abstract»
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Bipolar Resistive RAM Based on
Publication Year: 2016, Page(s):171 - 184 : Physics, Compact Modeling, and Variability Control${\rm HfO}_{2}$
Cited by: Papers (8)In this paper, we thoroughly investigate the characteristics of the TiN/Ti/HfO2/TiN resistive random access memory (RRAM) device. The physical mechanisms involved in the device operations are comprehensively explored from the atomistic standpoint. Self-consistent physics simulations based on a multi-scale approach are employed to achieve a complete understanding of the device physics. T... View full abstract»
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Exploration of Si/Ge Tunnel FET Bit Cells for Ultra-low Power Embedded Memory
Publication Year: 2016, Page(s):185 - 197
Cited by: Papers (2)Ultra-low-power embedded memory is emerging as a key challenge to design systems with stringent energy but relaxed performance constraints like various wireless sensors and Internet-of-Things (IoT) devices. This paper explores the potential of Si/Ge tunnel FETs (TFET) in designing ultra-low power embedded memory bit cells, namely, Static Random Access Memory (SRAM) and embedded Dynamic RAM (eDRAM)... View full abstract»
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Neuromorphic Computing Based on Emerging Memory Technologies
Publication Year: 2016, Page(s):198 - 211
Cited by: Papers (21)In this paper, we review some of the novel emerging memory technologies and how they can enable energy-efficient implementation of large neuromorphic computing systems. We will highlight some of the key aspects of biological computation that are being mimicked in these novel nanoscale devices, and discuss various strategies employed to implement them efficiently. Though large scale learning system... View full abstract»
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Spintronic Memristor as Interface Between DNA and Solid State Devices
Publication Year: 2016, Page(s):212 - 221
Cited by: Papers (1)Recently biomolecular computing platforms have been widely investigated with great potentials in both biomedical research and practices, such as using molecular structures of DNA to present the data bits and to operate the logic. Emerging CMOS/molecular hybrid (CMOL) circuitry demonstrates many overwhelming advantages compared with pure biomolecular circuitry, including the design flexibility and ... View full abstract»
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Associative Memristive Memory for Approximate Computing in GPUs
Publication Year: 2016, Page(s):222 - 234
Cited by: Papers (4)Using associative memories to enable computing-with-memory is a promising approach to improve energy efficiency. Associative memories can be tightly coupled with processing elements to restore and later recall function responses for a subset of input values. This approach avoids the actual function execution on the processing element to save on energy. The challenge, however, is to reduce the ener... View full abstract»
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Leveraging Stochastic Memristor Devices in Neuromorphic Hardware Systems
Publication Year: 2016, Page(s):235 - 246
Cited by: Papers (6)As the fourth basic circuit element, memristor has a unique synapse-alike feature which demonstrates great potentials in neuromorphic circuit design. However, a large gap exists between the theoretical memristor characteristics and the actual device behavior. For example, though the continuous changing in resistance state is expected in neuromorphic circuit design, it is difficult to maintain arbi... View full abstract»
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Low-Power MCU With Embedded ReRAM Buffers as Sensor Hub for IoT Applications
Publication Year: 2016, Page(s):247 - 257
Cited by: Papers (6)This paper proposes embedding 256 Kb resistive random-access memory (ReRAM) in a microcontroller unit as a data buffer for communicating with a stand-alone flash memory. In this study, the chip was manufactured using a combination of the TSMC 0.18 μm process and the Industrial Technology Research Institute ReRAM back-end-of-line process. The ReRAM was equipped with a novel sense amplifier that had... View full abstract»
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IEEE Journal on Emerging and Selected Topics in Circuits and Systems information for authors
Publication Year: 2016, Page(s): 258|
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IEEE membership can help you reach your personal goals
Publication Year: 2016, Page(s): 259|
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Expand your professional network with IEEE
Publication Year: 2016, Page(s): 260|
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IEEE Circuits and Systems Society Information
Publication Year: 2016, Page(s): C3|
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Aims & Scope
The IEEE Journal on Emerging and Selected Topics in Circuits and Systems publishes special issues covering the entire Field of Interest of the IEEE Circuits and Systems Society and with particular focus on emerging areas.
Meet Our Editors
Editor-in-Chief
Eduard Alarcon
UPC BarcelonaTech
Barcelona, Spain
eduard.alarcon@upc.edu