IEEE Transactions on Electron Devices

For original paper, see S.L. Wang et al., ibid., vol.39., no.8, pp. 1821-1828 (Aug. 1992). In the work of Wang et al., an efficient method for obtaining the space-dependent energy electron distribution (EED) was reviewed and some limitations related to its applicability were extensively discussed by comparisons with one dimensional Monte Carlo simulations. Here, the reasons for some of these limit... View full abstract»

An approach for modeling hot-electron induced change in drain current that significantly improves the ease of parameter extraction and provides new capabilities for modeling the effect of bidirectional stressing and the asymmetrical I-V characteristics after stressing is presented. The change in the drain current, ΔID is implemented as an asymmetrical voltage-controlled current so... View full abstract»

An analytical threshold voltage model for SiGe-channel ultrathin SOI PMOS devices is presented. As confirmed by the PISCES simulation results, the analytical model provides a good prediction on the threshold voltage. According to the analytical-formula, depending on the back gate bias, the SiGe-channel SOI PMOS device may have a conduction channel at the top or the bottom of the SiGe channel or at... View full abstract»

The effect of surface roughness of Si3N4 films on time-dependent dielectric breakdown (TDDB) characteristics of SiO2/Si3N4/SiO2 (ONO) stacked films was investigated. The surface roughness of Si3N 4 films-was found to become higher with increasing deposition temperature and to cause the degradation of TDDB chara... View full abstract»

A repair technique for shifter defects on phase shifting masks is described. It is based on the spin-coating of silicon-containing resist on the entire mask, electron beam exposure, and development. The new repair technique is quite simple because it does not require the deposition or removal of shifter materials. Both intrusion and extrusion shifter defects have been successfully repaired View full abstract»

Anomalous voltage and doping dependence of surface leakage currents in heavily doped gated diodes is described and explained. By 2-D numerical device simulations, using a recombination model which includes trap-assisted tunneling, a good quantitative description of surface leakage current is obtained. This has resulted in a revision of the conventional description of these currents. Simple design ... View full abstract»

The use of an asymmetric MOS structure for superior analog circuit performance is considered. Results from the fabrication of 1-μm-gate length DMOS transistors show increases of up to 1.9 in transconductance, 10 in output resistance, and 8 in intrinsic gain when compared to NMOS structures of similar gate length and threshold voltage. Substrate current is also reduced by up to a factor of 10. T... View full abstract»

The generation of current pulses in In_0.53Ga_0.47 As-transfer devices by short optical pulses is demonstrated. The triggering conditions for the generation of single domains are determined with respect to optical peak power, doping concentration, and location of irradiation. The sensitivity and gain of a proposed repeater circuit are calculated View full abstract»

Theoretical and experimental evidence is presented to show that the effective mass of holes is reduced due to strain in the Gex Si1-x layers grown on Si(100) substrate. It is shown theoretically that due to this change in the hole effective mass, the reduction of bandgap of a heavily doped (i.e., more than ~1×1018 cm-3) GexSi1-x View full abstract»

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p+ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without incre... View full abstract»

The operation of micron and submicron GaAs MESFETs under high-speed transient and high-frequency small-signal conditions is analyzed using a two-dimensional model. The effects of displacement currents, dipole due to negative differential mobility or current continuity, and two-dimensional transport are emphasized. The origin of delay effects, such as the phase delay incorporated in small-signal mo... View full abstract»

The fabrication of monolithically integrated self-scanning light-emitting device (SLED) on a GaAs substrate and its performance are described. The SLED consists of integrated light-emitting thyristors whose turn-on voltages interact with each other through coupling diodes or resistors. Light-emitting states are automatically transferred by input clock pulses without using external shift registers.... View full abstract»

The authors point out that time to breakdown (tBD) of silicon dioxide has a pronounced frequency dependence when it is measured under bipolar bias conditions. At high frequencies, bipolar t BD, can be enhanced by two orders of magnitude over the tBD, obtained using DC or unipolar pulse bias of the same frequency and electric field. The lifetime improvement is attri... View full abstract»

A time-resolved free-carrier absorption technique is used to describe transient gate turn-off thyristor (GTO) phenomena two-dimensionally. The measurements are spatially resolved in the anode-to-cathode direction, as well as in the direction determined by the cathode length. Effects associated with charge removal during the GTO turn-off cycle with respect to external circuit conditions are discuss... View full abstract»

A delta-doped InGaAs-GaAs quantum well (QW) has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The full width at half maximum (FWHM) of the doping profile analyzed by capacitance-voltage measurements is less than 30 A and is comparable to those produced by molecular beam epitaxy (MBE) or chemical beam epitaxy (CBE). Two kinds of delta-doping interband tunneling diode... View full abstract»

The authors study the degradation of MOSFET current-voltage (V-I) characteristics as a function of polysilicon gate concentration (Np ), oxide thickness (tox) and substrate impurity concentration (ND) using measured and modeled results. Experimentally it is found that for MOSFETs with thin gate oxide (tox≈70 Å) and high substrate concentration (... View full abstract»

The reliability of high-performance AlInAs/GaInAs heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy (MBE) is discussed. Devices with a base Be doping level of 5×1019 cm-3 and a base thickness of approximately 50 nm displayed no sign of Be diffusion under applied bias. Excellent stability in DC current gain, device turn-on voltage, and base-emitte... View full abstract»

The effects of modified n- and p-channel doping on the characteristics of 0.25-μm In0.52Al0.48As/In 0.53Ga0.47As/InP HEMTs are studied. The introduction of n- or p-channel doping (in addition to the modulation doping in the donor supply layer) is intended to modify the potential well and carrier distribution in the device channel for improved device p... View full abstract»

Minority carrier mobility has been extracted from I-V measurements on N- and PMOS-transistors entirely processed by means of X-ray lithography with effective channel lengths down to 0.35 μm. The measurements have been performed within the temperature range 208-403 K (-65°C to +130°C). The accuracy of the mobility determination has been investigated, especially with regard to the determi... View full abstract»

A flash E2PROM device which is programmed with a highly efficient hot-electron injection mechanism is described. This high-injection MOS (HIMOS) device combines a very high programming speed at 5-V-only operation with a low development entry cost, which renders it highly attractive for embedded memory applications. The HIMOS concept exhibits complete soft-write immunity and the possibil... View full abstract»

The equivalent-input-noise-current spectral density for a monolithically integrated optical receiver front-end using InP/InGaAs heterojunction bipolar transistors and a p-i-n photodiode is computed from a small-signal model. Particular attention is paid to the contributions to the noise from the HBT in the first stage of the amplifier. It is shown that with transistors designed for 1-10-Gb/s recei... View full abstract»

An investigation of the dielectric breakdown characteristics of charged samples is discussed. B-mode dielectric breakdown failure was eliminated by scrubbing gate oxide films using a brush. Various scrubbing experiments revealed that this occurred due to charging to a voltage close to the intrinsic breakdown voltage of the gate oxide film. Other characteristics such as C-V curves and time-dependen... View full abstract»

The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias fields above ~10 kV/cm. At these biases, the switch also remained conductive for a much longer time (~100... View full abstract»

The design and DC and RF characteristics of double heterojunction pseudomorphic InxGa1-xAs/InP (0.64 ⩽x⩽0.82) p-type MODFETs are reported. After optimizing the layer sequence in a structure with 64%, In-mole fraction, in order to suppress the parallel conduction in the doping layers, three structures with increased strain (x=0.73, 0.77, and 0.82) were created taking i... View full abstract»

The authors point out that when a triangular shape for the electric field in the base-collector space-charge region of an n-p-n Si BJT (bipolar junction transistor) is assumed, the electron mean energy can be calculated analytically from a simplified energy-balance equation. On this basis a nonlocal-impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used... View full abstract»