# IEEE Journal of Quantum Electronics

## Filter Results

Displaying Results 1 - 25 of 25
• ### Front cover

Publication Year: 2012, Page(s): C1
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• ### IEEE Journal of Quantum Electronics publication information

Publication Year: 2012, Page(s): C2
| PDF (126 KB)

Publication Year: 2012, Page(s):1235 - 1236
| PDF (119 KB)
• ### Balance Between Noise Fluxes in Free-Running Single-Mode Class-A Lasers

Publication Year: 2012, Page(s):1237 - 1242
Cited by:  Papers (6)
| | PDF (480 KB) | HTML

The fluctuation effect of laser pumping rate on the output noise fluxes of class-A lasers is investigated. The method is based on the role of cavity Langevin force as a fluctuating force in the absence of the atomic population inversion and dipole moment Langevin forces. The temporal fluctuations induced to the phase and amplitude of the cavity electric field and the atomic population inversion ar... View full abstract»

• ### Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector

Publication Year: 2012, Page(s):1243 - 1251
Cited by:  Papers (5)
| | PDF (1055 KB) | HTML

We report on a systematic study of the effect of barriers on quantum dots-in-a-well infrared photodetectors. Four devices are fabricated and characterized with varying composition for barriers adjacent to quantum dots and away from quantum dots. Effects of these “proximity” and “remote” barriers are studied by comparing photoluminescence, responsivity, dark current, bac... View full abstract»

• ### Dynamic Analysis of High-Order Laterally Coupled DFB Lasers Using Time-Domain Traveling-Wave Model

Publication Year: 2012, Page(s):1252 - 1258
Cited by:  Papers (2)
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This paper describes the application of a time-domain modeling approach for a laterally coupled distributed feedback (LC-DFB) semiconductor laser for the first time. We numerically study the effect of the radiation modes on LC-DFB laser properties. We integrate the Streifer's coefficients, which represent the effects of radiation and evanescent modes into the time-domain coupled-wave equations. Hi... View full abstract»

• ### SASE FEL Storage Ring

Publication Year: 2012, Page(s):1259 - 1264
Cited by:  Papers (2)
| | PDF (340 KB) | HTML

We explore the possibility of operating a self-amplified spontaneous emission free electron laser with a storage ring. We use a semi-analytical model to obtain the evolution inside the undulator, by taking into account the interplay on the laser dynamics due to the induced energy spread and the radiation damping. We obtain the Renieri's limit for the stationary output power, and discuss the possib... View full abstract»

• ### Amplified Spontaneous Emission in Discharge-Driven HF Chemical Lasers

Publication Year: 2012, Page(s):1265 - 1268
| | PDF (359 KB) | HTML

An amplified spontaneous emission (ASE) calculation model is established for the discharge-driven CW HF chemical gain module. By using a small signal gain coefficient and upper state population density, the ASE propagated outside the amplifier is calculated, where after, it is measured by experiment. The result of theory and experiment shows that the experimental results are consistent with the ca... View full abstract»

• ### Beam Quality Improvement in Broad-Area Semiconductor Lasers via Evanescent Spatial Filtering

Publication Year: 2012, Page(s):1269 - 1274
Cited by:  Papers (5)
| | PDF (813 KB) | HTML

In semiconductor lasers, the unpumped cladding region outside the optical waveguide is nominally lossy. Since the evanescent tail of higher-order waveguide modes extends further into the waveguide cladding, the modal loss increases for high spatial frequency perturbations, creating a weak spatial filter. Increasing the effective laser cavity length in a broad-area laser enhances the effect of this... View full abstract»

• ### Compton Mode Conversion of Laser Beat Wave-Driven Plasma Wave by an Electron Beam in a Plasma Channel

Publication Year: 2012, Page(s):1275 - 1281
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A large amplitude plasma wave, driven by beating two lasers in a depressed density plasma channel, is shown to effectively couple to a mildly relativistic electron beam to produce terahertz (THz) radiation. The plasma wave parametrically couples the THz electromagnetic mode to a negative energy beam space charge mode, and both decay waves grow at the expense of the beam and the plasma wave. In the... View full abstract»

• ### Analytical Framework for the Steady State Analysis of Wavelength-Dependent and Intensity-Dependent Interaction of Multiple Monochromatic Beams in Semiconductor Photonic Structures With Multiple Active and Passive Sections

Publication Year: 2012, Page(s):1282 - 1299
Cited by:  Papers (3)
| | PDF (914 KB) | HTML

The design, optimization, and parametric studies of photonic integrated circuits typically require steady state optical field profiles. Previously, a planewave-based eigenmode expansion and mode-matching analysis was shown to be an efficient method in calculating the steady-state optical field profile of a monochromatic beam in 2-D/3-D geometries with passive media. In this paper, we extend this a... View full abstract»

• ### High Energy Picosecond Optical Parametric Amplifier Pumped by the Second Harmonic of a Two-Stage Ti:sapphire Laser

Publication Year: 2012, Page(s):1300 - 1304
Cited by:  Papers (1)
| | PDF (493 KB) | HTML

We demonstrate a high energy picosecond optical parametric generation and amplification (OPA) system in the visible range based on two type-I phase matched β-barium borate crystals, in a walk-off compensating geometry. The second harmonic of a two-stage 60 ps Ti:sapphire laser amplifier at 10 Hz repetition rate serves as the pump. The signal is continuously tunable from 460 to 750 nm, which... View full abstract»

• ### Solar-Blind p-i-n Photodetectors Formed on ${rm SiO}_{2}$-Patterned n-GaN Templates

Publication Year: 2012, Page(s):1305 - 1309
Cited by:  Papers (8)
| | PDF (426 KB) | HTML

Al0.45Ga0.55N/GaN solar-blind p-i-n photodiodes (PDs), fabricated by selective growth on SiO2 patterned n-GaN templates, are demonstrated in this paper. This selective-area-regrowth technique could lead to a reduction of tensile strain in the Al0.45Ga0.55 N/GaN epitaxial layers, thus alleviating the formation of cracks and reducing the dark cu... View full abstract»

• ### Anomalous Electro-Optic Effect in Polar Liquid Films

Publication Year: 2012, Page(s):1310 - 1313
Cited by:  Papers (1)
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We present an anomalous electro-optic effect in polar liquid films: liquids, usually considered to be isotropic, possess the linear electro-optic effect that occurs only in materials lacking inversion symmetry. Due to the observed large effect in the low-frequency range and slow response speed, this strange effect was thought to come from the field-induced orientation of large mass. Therefore, we ... View full abstract»

• ### Field Coupling Method for the Direct Synthesis of 2-D Microring Resonator Networks

Publication Year: 2012, Page(s):1314 - 1321
Cited by:  Papers (2)
| | PDF (625 KB) | HTML

We present an analytical method for designing coupled microring resonator (CMR) networks of general 2-D coupling topologies. The method is based on the “field coupling in space” formalism of microring resonators, which gives a more rigorous and accurate description of CMRs than formulations based on “energy coupling in time,” especially under strong coupling conditions.... View full abstract»

• ### How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2–3 $\mu{\rm m}$

Publication Year: 2012, Page(s):1322 - 1326
Cited by:  Papers (13)
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The photoluminescence (PL) peak of an InAs/GaSb superlattice (SL) structure is found to be shifted from 5.8 to 4.0 $mu{rm m}$ at 77 K, when the growth temperature is lowered from 380 to 340$^{circ}{rm C}$. The PL peak shift is related to In intermixing, thus some SL s... View full abstract»

• ### Optical Frequency Comb Generation Using Dual-Mode Injection-Locking of Quantum-Dash Mode-Locked Lasers: Properties and Applications

Publication Year: 2012, Page(s):1327 - 1338
Cited by:  Papers (16)
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In this paper, we describe generation and application of wide narrow linewidth optical frequency combs using dual-mode injection-locking of InP quantum-dash mode-locked lasers. First, the dependence of the RF locking-range on the device's absorber voltage is experimentally investigated. Under optimized absorber voltage, a continuous wide RF locking-range of View full abstract»

• ### Photonic Generation of Wideband Time-Delay-Signature-Eliminated Chaotic Signals Utilizing an Optically Injected Semiconductor Laser

Publication Year: 2012, Page(s):1339 - 1345
Cited by:  Papers (15)
| | PDF (1528 KB) | HTML

Photonic generation of wideband chaotic signals with time delay signature elimination is investigated experimentally and numerically based on a semiconductor laser (slave laser) with chaotic optical injection from a master laser. The master laser is subject to moderate optical feedback where the feedback strength and external-cavity length are fixed, while the slave laser stands alone. The experim... View full abstract»

• ### Integration of 1.3-$\mu{\rm m}$ Quantum-Dot Lasers With ${\rm Si}_{3}{\rm N}_{4}$ Waveguides for Single Mode Optical Interconnects

Publication Year: 2012, Page(s):1346 - 1351
Cited by:  Papers (2)
| | PDF (1176 KB) | HTML

A single mode photonic integrated circuit, consisting of a monolithically integrated quantum-dot laser and a suitably designed ${rm Si}_{3}{rm N}_{4}$ waveguide, is demonstrated. The 1.3-$mu{rm m}$ quantum-dot laser incorporates a superlattice barrier, p-doping, and t... View full abstract»

• ### Transition From Short-to-Long Cavity and From Self-Mixing to Chaos in a Delayed Optical Feedback Laser

Publication Year: 2012, Page(s):1352 - 1359
Cited by:  Papers (14)
| | PDF (1074 KB) | HTML

We analyze the regime of strong perturbation in a laser diode subjected to delayed optical feedback (DOF) from an external reflector, and study the intermediate region between short and long cavities, using Lang and Kobayashi equations to follow the dynamic regimes of the DOF system. We find that well-known regimes of unperturbed oscillations, period one, multi-periodic, and chaos are dictated by ... View full abstract»

• ### Exceptionally Narrow-Band Quantum Dot Infrared Photodetector

Publication Year: 2012, Page(s):1360 - 1366
Cited by:  Papers (1)
| | PDF (864 KB) | HTML

InGaAlAs/InGaAs/InGaAlAs/InAs/InP quantum-dot structures have been investigated for the development of infrared photodetectors capable of generating photocurrent peaks exceptionally narrow for sharp wavelength discrimination. Our specially designed structure displays a photocurrent peak at 12 $mu{rm m}$ with a full width at half ma... View full abstract»

• ### Correction to “Simulation and Analysis of Dynamic Regimes Involving Ground and Excited State Transitions in Quantum Dot Passively Mode-Locked Lasers” [Sep 12 1193-1202]

Publication Year: 2012, Page(s): 1367
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In the above titled paper (ibid., vol. 48, no. 9, pp. 1193-1202, Sep. 2012), the complete author list of reference [6] should have read: S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, and M. Hopkinson. In reference [7], the complete author list should have read: S. Breuer, M. Rossetti, L. Drzewietzki, P. Bardella, I. Montrosset, and W. Elsasser. In r... View full abstract»

• ### Special issue on semiconductor lasers

Publication Year: 2012, Page(s): 1368
| PDF (479 KB)
• ### IEEE Journal of Quantum Electronics information for authors

Publication Year: 2012, Page(s): C3
| PDF (27 KB)
• ### [Blank page - back cover]

Publication Year: 2012, Page(s): C4
| PDF (5 KB)

## Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong