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# IEEE Transactions on Microwave Theory and Techniques

## Filter Results

Displaying Results 1 - 25 of 34

Publication Year: 2011, Page(s):C1 - C4
| PDF (49 KB)
• ### IEEE Transactions on Microwave Theory and Techniques publication information

Publication Year: 2011, Page(s): C2
| PDF (44 KB)
• ### Relation Between Reflection Phase and Surface-Wave Bandgap in Artificial Magnetic Conductors

Publication Year: 2011, Page(s):1901 - 1908
Cited by:  Papers (3)
| | PDF (1124 KB) | HTML

The relationship between the phase of the reflection coefficient and the surface-wave bandgap in planar artificial magnetic conductors (AMCs) is investigated. The periodic surface of the AMC is modeled as a surface impedance and the plane-wave reflection coefficients and the supported surface waves are obtained by this model. Next, the connection between the phase of the reflection coefficient in ... View full abstract»

• ### Inductance Calculations for Plane-Pair Area Fills With Vias in a Power Distribution Network Using a Cavity Model and Partial Inductances

Publication Year: 2011, Page(s):1909 - 1924
Cited by:  Papers (15)
| | PDF (1914 KB) | HTML

Partial inductances are computed herein for the via transitions between parallel planes. A hybrid method proposed for the inductance calculation correlates the definition of the partial inductance and a resonant cavity model. The hybrid method is corroborated by comparison with the partial-element equivalent-circuit and the cavity methods, as well as measurements. The portions of the plane net and... View full abstract»

• ### Very Compact and Low-Profile LTCC Unbalanced-to-Balanced Filters With Hybrid Resonators

Publication Year: 2011, Page(s):1925 - 1936
Cited by:  Papers (15)
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In this paper, two design approaches are presented for realizing very compact and low-profile unbalanced-balanced filters with special configuration called hybrid resonators. One of the design concepts for the unbalanced-balanced filter is based on the folded hybrid resonators. This filter consists of two hybrid resonators, which are folded face to face symmetrically. The capacitance between two r... View full abstract»

• ### Microstrip Dual/Quad-Band Filters With Coupled Lines and Quasi-Lumped Impedance Inverters Based on Parallel-Path Transmission

Publication Year: 2011, Page(s):1937 - 1946
Cited by:  Papers (43)
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Microstrip quad-band bandpass filters with controllable passband center frequencies are presented and intensively investigated in this study. The newly proposed quad-band filter principally comprises two dual-band filters. Specifically, the two distinct types of dual-band filters with different dual-band generating mechanisms are studied and then combined to provide the quad-band responses. By inc... View full abstract»

• ### Mode Symmetry Analysis and Design of CMOS Synthetic Coupled Transmission Lines

Publication Year: 2011, Page(s):1947 - 1954
Cited by:  Papers (9)
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This paper presents the mode symmetry analysis and design of CMOS synthetic coupled lines that are meandered for the miniaturization design. The conventional even-odd mode analysis is not appropriate to apply due to the meandering structure, which is asymmetric. The asymmetric coupled-line model is therefore adopted for analyses and the equivalent model parameters are extracted based on ABCD View full abstract»

• ### Design of Unequal Dual-Band Gysel Power Divider With Arbitrary Termination Resistance

Publication Year: 2011, Page(s):1955 - 1962
Cited by:  Papers (38)
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This paper presents an exact closed-form design method for dual-band unequal Gysel power divider with arbitrary termination resistance. To obtain the unequal property, branch lines with different characteristic impedances attached to a short-circuit terminated stub and an open-circuit terminated stub are needed. Arbitrary termination resistance matching can be achieved without additional output tr... View full abstract»

• ### On-Chip Slot-Ring and High-Gain Horn Antennas for Millimeter-Wave Wafer-Scale Silicon Systems

Publication Year: 2011, Page(s):1963 - 1972
Cited by:  Papers (29)  |  Patents (1)
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This paper presents on-chip slot-ring and horn antennas for wafer-scale silicon systems. A high efficiency is achieved using a 100-μm quartz superstrate on top of the silicon chip, and a low-loss microstrip transformer using the silicon back-end metallization. A finite ground plane is also used to reduce the power coupled to the TEM mode. The slot-ring and 1-λ02... View full abstract»

• ### Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on $S$ -Parameters Measured at Normal Bias Conditions

Publication Year: 2011, Page(s):1973 - 1982
Cited by:  Papers (12)
| | PDF (916 KB) | HTML

A new direct parameter-extraction scheme applied to a heterojunction bipolar transistor (HBT) small-signal equivalent circuit with distributed base-collector junction capacitance is presented. The proposed method relies exclusively on S -parameters measured at low and high frequencies in normal bias conditions, and without using approximations based on anticipated values. The extraction res... View full abstract»

• ### Characterization of the Noise Parameters of SiGe HBTs in the 70–170-GHz Range

Publication Year: 2011, Page(s):1983 - 2000
Cited by:  Papers (26)
| | PDF (1486 KB) | HTML

Noise parameter (Fmin, Zopt, and R n) measurements of SiGe HBTs are provided for the first time in the 70-170-GHz range. In the W-band, this is accomplished by integrating on a single chip a source impedance tuner with the device-under-test and a low-noise amplifier with 3.8-dB noise figure. Noise-figure measurements were performed over multiple so... View full abstract»

• ### Reliability Investigation of Photoconductive Continuous-Wave Terahertz Emitters

Publication Year: 2011, Page(s):2001 - 2007
| | PDF (935 KB) | HTML

The lifetime of photomixers depends significantly on the operation conditions. High values of bias voltage and/or optical power increase the emitted terahertz power, but considerably decrease the operation lifetime. Interdigitated finger photomixers especially face the problem of thermal destruction due to high current densities. We present an Arrhenius analysis of low-temperature-grown-GaAs photo... View full abstract»

• ### A 20/40-GHz Dual-Band Voltage-Controlled Frequency Source in 0.13-$\mu{\hbox {m}}$ CMOS

Publication Year: 2011, Page(s):2008 - 2016
Cited by:  Papers (9)
| | PDF (1245 KB) | HTML

An LC-type voltage-controlled oscillator (VCO) and a push-push frequency doubler are presented for 20/40-GHz dual-band design in standard 0.13-μm CMOS. Combining the varactor with the transconductance-tuned regime, the VCO is realized to arrive at the range extension for high-frequency operation. In addition, a technique using sensitivity distribution is adopted to achieve linear tuning ran... View full abstract»

• ### Optimized Transistor Output Power—Extending Cripps' Loadline Method to Cascode Stages

Publication Year: 2011, Page(s):2017 - 2023
Cited by:  Papers (4)
| | PDF (508 KB) | HTML

A method for analytical optimization of maximum distortionless output power in a class-A amplifier stage is presented. This method is based on Brown's ideas to optimize the load resistance of triode vacuum tubes and Cripps' loadline method. As a result, the maximum distortionless output power of a cascode stage can be directly calculated as a function of load impedance. The theoretical approach is... View full abstract»

• ### Analysis of High-Efficiency Power Amplifier Using Second Harmonic Manipulation: Inverse Class-F/J Amplifiers

Publication Year: 2011, Page(s):2024 - 2036
Cited by:  Papers (21)
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In this paper, an analysis of a power amplifier manipulated using a second harmonic (PA-2HM) is described using a remarkable correlation between the fundamental and second harmonic impedances. The output loading condition, made up of an optimum fundamental impedance mapped to the conditional second harmonic reactance, allows us to achieve a high-efficiency power amplifier (PA) with a simple output... View full abstract»

• ### Analysis of High-Efficiency Power Amplifiers With Arbitrary Output Harmonic Terminations

Publication Year: 2011, Page(s):2037 - 2048
Cited by:  Papers (24)
| | PDF (1461 KB) | HTML

This paper presents an analysis of ideal power amplifier (PA) efficiency maximization subject to a finite set of arbitrary complex harmonic terminations, extending previous results where only purely reactive harmonic terminations were treated. Maximum efficiency and corresponding fundamental output power and load impedance are analyzed as a function of harmonic termination(s). For a PA restricted ... View full abstract»

• ### Saturated Power Amplifier Optimized for Efficiency Using Self-Generated Harmonic Current and Voltage

Publication Year: 2011, Page(s):2049 - 2058
Cited by:  Papers (37)
| | PDF (2349 KB) | HTML

A saturated power amplifier (PA) optimized for efficiency is described. As a PA is driven into saturated operation, the current source of the device generates a large third harmonic current, which creates a quasi-rectangular current waveform. The large nonlinear output capacitor of the transistor generates a second harmonic voltage with a very small third harmonic component. The second harmonic vo... View full abstract»

• ### Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs

Publication Year: 2011, Page(s):2059 - 2063
Cited by:  Papers (12)
| | PDF (887 KB) | HTML

A two-stage distributed amplifier monolithic microwave integrated circuit (MMIC) has been designed and fabricated using dual-gate GaN HEMTs. The measured small-signal gain of the MMIC is about 20 dB over the frequency range of 2-18 GHz. Measured peak saturated output power is about 2 W. A low interstage impedance of 25 Ω is chosen for two reasons. It leads to larger size of the HEMTs in the... View full abstract»

• ### A High-Linearity $X$-Band Four-Element Phased-Array Receiver: CMOS Chip and Packaging

Publication Year: 2011, Page(s):2064 - 2072
Cited by:  Papers (26)
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This paper presents the design and chip-on-board packaging of a high-linearity four-element phased-array receiver for 9-10-GHz applications. The phased-array is built using 0.13-μm CMOS with a single-ended design, and it results in a measured gain of 10.1 dB, an input P1dB of - 12.5dBm, an input IP3 of -4 dBm, and a noise figure of 3.4 dB at 9.5 GHz. An rms gain error ... View full abstract»

• ### Systematic Approach to the Stabilization of Multitransistor Circuits

Publication Year: 2011, Page(s):2073 - 2082
Cited by:  Papers (27)
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This paper proposes a systematic approach for the elimination of spurious oscillations in circuits with multiple active elements. The procedure is based on detecting the sensitive parts (nodes or branches) of the complex circuit at which we can have a strong control of the dynamics responsible for the instability. To do so, stability analyses based on pole-zero identification are performed at mult... View full abstract»

• ### A Polar Transmitter Using Interleaving Pulse Modulation for Multimode Handsets

Publication Year: 2011, Page(s):2083 - 2090
Cited by:  Papers (15)
| | PDF (1197 KB) | HTML

This paper presents a highly efficient polar transmitter using interleaving pulse modulation for multiple communication standards. Using the proposed interleaving pulse modulation technique, a polar transmitter can suppress the odd-order output spurs deeply with a feasible value of essential sampling frequency and keep the residual spurs from falling into the receive bands. To validate the propose... View full abstract»

• ### $Ku$ -Band Image Rejection Sliding-IF Transmitter in 0.13-$mu{hbox {m}}$ CMOS Process

Publication Year: 2011, Page(s):2091 - 2107
Cited by:  Papers (5)
| | PDF (1468 KB) | HTML

The insensitivity to gain and phase mismatches is investigated in a multiband double image rejection transmitter (DIRT). Although a direct in-phase/quadrature (I/Q) modulator architecture is simple, the I/Q gain and phase mismatches directly affect the image rejection ratio (IRR) over the operating frequencies. However, the DIRT has low sensitivity to a small I/Q phase mismatch, while the IRR is p... View full abstract»

• ### Schottky Diode Series Resistance and Thermal Resistance Extraction From $S$ -Parameter and Temperature Controlled I–V Measurements

Publication Year: 2011, Page(s):2108 - 2116
Cited by:  Papers (12)
| | PDF (772 KB) | HTML

A new method for extracting the series resistance and thermal resistance of a Schottky diode is presented. The method avoids the inaccuracies caused by the temperature dependence of the saturation current and ideality factor. These are a major concern for traditional extraction methods, especially when the diode under test has a submicrometer anode diameter and is significantly heated up by the bi... View full abstract»

• ### A Cryogenic Integrated Noise Calibration and Coupler Module Using a MMIC LNA

Publication Year: 2011, Page(s):2117 - 2122
Cited by:  Papers (2)
| | PDF (942 KB) | HTML

A new cryogenic noise calibration source for radio astronomy receivers is presented. Dissipated power is only 4.2 mW, allowing it to be integrated with the cold part of the receiver. Measured long-term stability, sensitivity to bias voltages, and noise power output versus frequency are presented. The measured noise output versus frequency is compared to a warm noise diode injected into a cryogenic... View full abstract»

• ### A Method for Direct Impedance Measurement in Microwave and Millimeter-Wave Bands

Publication Year: 2011, Page(s):2123 - 2130
Cited by:  Papers (9)
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A novel method for direct impedance measurement using a common vector network analyzer (VNA) is introduced and experimentally verified. In commonly used methods, the input impedance or admittance of a device-under-test (DUT) is derived from the measured value of its reflection coefficient causing serious inaccuracy problems for very high and very low impedances. The proposed method makes it possib... View full abstract»

## Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

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## Meet Our Editors

Editor-in-Chief
Luca Perregrini
luca.perregrini@unipv.it

Editor-in-Chief
Jose Carlos Pedro
edit.tmtt@ua.pt