# IEEE Transactions on Magnetics

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Displaying Results 1 - 25 of 389
• ### [Front cover]

Publication Year: 2009, Page(s): C1
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• ### IEEE Transactions on Magnetics publication information

Publication Year: 2009, Page(s): C2
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Publication Year: 2009, Page(s):3369 - 3396
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• ### Intermag 2009 Conference Chair's Foreword

Publication Year: 2009, Page(s): 3397
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• ### Intermag 2009 Publication Committee

Publication Year: 2009, Page(s):3398 - 3399
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• ### Beyond MRAM, CMOS/MTJ Integration for Logic Components

Publication Year: 2009, Page(s):3400 - 3405
Cited by:  Papers (16)  |  Patents (1)
| | PDF (733 KB) | HTML

Spintronics is a new discipline in which the spin of the electron is used as an additional degree of freedom besides its electrical charge to build innovative electronic components. Magnetic materials can be used as spin polarizer/analyzer in association with semiconductors or insulators, resulting in hybrid CMOS/magnetic architectures. Magnetic Tunnel Junctions (MTJ) are the basic elements of a n... View full abstract»

• ### After Hard Drives—What Comes Next?

Publication Year: 2009, Page(s):3406 - 3413
Cited by:  Papers (151)  |  Patents (5)
| | PDF (725 KB) | HTML

There are numerous emerging nonvolatile memory technologies, which have been proposed as being capable of replacing hard disk drives (HDDs). In this paper, the prospects for these alternative technologies to displace HDDs in 2020 are analyzed. In order to compare technologies, projections were made of storage density and performance in year 2020 for both hard disks and the alternative technologies... View full abstract»

• ### Possible Spin Pumping Effects on Spin Torque Induced Magnetization Switching in Magnetic Tunneling Junctions

Publication Year: 2009, Page(s):3414 - 3417
Cited by:  Papers (4)
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Dependence of spin torque induced magnetization switching upon interfacial insulating layers properties of magnetic tunneling junctions (MTJ) are studied. For the same magnetic properties and patterning geometric dimensions, changes in MTJ interfacial insulating layers properties reveal interesting magnetization switching behaviors. These behaviors cannot be explained by conventional Landau-Lifshi... View full abstract»

• ### High Level Oscillations With Narrow Linewidth in Magnetic Nano-Contact Spin Torque Oscillator With Synthetic AF Spin-Valve Structure

Publication Year: 2009, Page(s):3418 - 3421
Cited by:  Papers (6)
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We investigated the current induced magnetization dynamics, so called spin torque oscillation, in magnetic nano-contact MR element with a synthetic antiferromagnetic type spin-valve structure under high in-plane applied magnetic field of 0.9-1 kOe. Very high level oscillation of 18 nVHz-1/2 with narrow FWHM of 12 MHz was observed in the condition of negative applied current where electr... View full abstract»

• ### Dipolar Field Effect on Microwave Oscillation in a Domain-Wall Spin Valve

Publication Year: 2009, Page(s):3422 - 3425
Cited by:  Papers (3)
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In this paper, we examined dipolar field effects on the microwave generation in the domain-wall spin valve by solving simultaneously the Landau-Lifshitz-Gilbert and Zhang-Levy-Fert diffusion equations. By numerically analyzing dipolar field dependence, we showed that the microwave generation needs the dipole-dipole interaction for a 180deg domain wall and the amplitude of the microwave ... View full abstract»

• ### Temperature Dependence of Microwave Nano-Oscillator Linewidths Driven by Spin-Polarized Currents: A Micromagnetic Analysis

Publication Year: 2009, Page(s):3426 - 3429
Cited by:  Papers (4)
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The dependence of the linewidth on the temperature in a spin valve driven by spin-polarized currents is analyzed by means of full micromagnetic simulations. The results are compared to the recent analytical predictions by Tiberkevic and confirmed by the experiments of Boone In agreement with the Tiberkevic theory and experiments of Sankey , our micromagnetic results point out two regimes. The line... View full abstract»

• ### Microwave Oscillations of the Giant Magnetoresistive Element in a Magnetic Field Perpendicular to the Plane

Publication Year: 2009, Page(s):3430 - 3433
Cited by:  Papers (1)
| | PDF (511 KB) | HTML

Applied voltage and magnetic field dependence of microwave oscillations have been studied for the giant magnetoresistive (GMR) element. In this experiment, a magnetic field is applied perpendicular to the plane of GMR films. It is found that the power spectral density (PSD) is less dependent on the direction of magnetic field and the resistance gap induced by the magnetic field corresponds to the ... View full abstract»

• ### Spin-Polarized Transport and Dynamics in Magnetic Tunneling Structures

Publication Year: 2009, Page(s):3434 - 3440
Cited by:  Papers (3)
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In the first part of this paper, we report a systematic study on the structural evolution under rapid thermal annealing and the corresponding transport properties in magnetic tunnel junctions (MTJs) with a crystalline MgO barrier. The results clearly indicate that high tunneling magnetic resistance can be achieved by annealing MTJs at a very short time, and it is directly related to the formation ... View full abstract»

• ### Theory of Injection Locking for Large Magnetization Motion in Spin-Transfer Nano-Oscillators

Publication Year: 2009, Page(s):3441 - 3444
Cited by:  Papers (24)
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We study magnetization dynamics in spin-transfer devices subject to DC and microwave injected currents. When the frequency of the injected current is sufficiently close to the self-oscillation frequency of the device, phase-locking occurs. This phenomenon is theoretically studied by using Landau-Lifshitz equation with Slonczewski spin-torque term. By exploiting separation of time scales and using ... View full abstract»

• ### Magnetic-Field-Driven Ferromagnetic Resonance in Spin-Transfer Devices

Publication Year: 2009, Page(s):3445 - 3448
Cited by:  Papers (1)
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An analytical approach to the study of ferromagnetic resonance in nanomagnets is discussed in the case when radio-frequency magnetic fields and spin-polarized electrical currents are simultaneously present. Current-controlled foldover effects in ferromagnetic resonance are predicted and analyzed. View full abstract»

• ### Measurement of Effective Free Layer Magnetization Orientation of TMR Sensors

Publication Year: 2009, Page(s):3449 - 3452
Cited by:  Papers (1)
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Measurements of thermal magnetization fluctuation noise spectrum in multi-directional magnetic field reveal tilt of effective free layer orientation in TMR sensors. We propose a method for effective sensor stiffness field measurement and demonstrate that deviations of stiffness from nominal values are caused by the angular dependence of the stiffness field. Ferro-magnetic resonance peak measuremen... View full abstract»

• ### Influence of Diffused Boron Into MgO Barrier on Pinhole Creation in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

Publication Year: 2009, Page(s):3453 - 3456
Cited by:  Papers (12)
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A relationship between boron (B) diffusion into the MgO barrier and pinhole creation in CoFeB/MgO/CoFeB-magnetic tunnel junctions (MTJs) was investigated. The diffused B in the MgO layer was identified by secondary ion mass spectrometry for the MTJs annealed at 350degC , which provide the giant magnetoresistance (TMR) ratio. The pinhole density, estimated from the statistic distribution of breakdo... View full abstract»

• ### Influence of Boron Diffusion on Transport and Magnetic Properties in CoFeB/MgO/CoFeB Magnetic Tunnel Junction

Publication Year: 2009, Page(s):3457 - 3459
Cited by:  Papers (3)
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Influence of boron concentration in CoFeB on the transport properties of CoFeB (B 20% and B 16%)/MgO/CoFeB magnetic tunnel junction (MTJ) was investigated. Boron distribution was studied by using X-ray photoelectron spectroscopy (XPS). High-resolution transmission electron microscope was utilized for analysis of the texture and interface quality. The MTJ with the boron diluted CoFeB (B 16%) pinned... View full abstract»

• ### High Bulk Spin Scattering Asymmetry in CPP Spin Valves With Alternated Monatomic $[hbox{Fe/Co}]_{rm n}$ Superlattice

Publication Year: 2009, Page(s):3460 - 3463
Cited by:  Papers (5)  |  Patents (1)
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We confirmed the structural properties of trilayered epitaxial films with AML [Fe/Co]n and Au spacer on Au electrode by RHEED and TEM. A considerably large DeltaRA (2.61 mOmegamum2) resistance area product was observed in all metallic current perpendicular-to-plane giant magneto-resistance (CPP-GMR) spin-valve elements by using alternate monatomic epitaxial [Fe/Co]n View full abstract»

• ### Effect of Buffer Layer Texture on the Crystallization of CoFeB and on the Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions

Publication Year: 2009, Page(s):3464 - 3466
Cited by:  Papers (11)
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Two different buffer layers (Ta/Ru/Ta and thick Ta) were tested for MgO MTJs. The influence of buffer layer texture on the crystallization of CoFeB bottom and top electrodes and on the tunnel magnetoresistance effect was investigated. X-ray results suggest that, after anneal, the CoFeB layer above MgO is well (200) textured and it does not depend on the buffer layer since MgO (100) barrier supplie... View full abstract»

• ### MgO-Based Epitaxial Magnetic Tunnel Junctions Using Fe-V Electrodes

Publication Year: 2009, Page(s):3467 - 3471
Cited by:  Papers (20)
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To examine the influence of the barrier quality in fully epitaxial Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs), we propose to use Fe-V alloys as magnetic electrodes. This leads to a reduced misfit with MgO. We actually observe, by high-resolution electron microscopy (HREM) and local strain measurements, that the misfit dislocations density in the MgO barrier is lower when it is grown on Fe-V(0... View full abstract»

• ### Antiferromagnetic Coupling in Sputtered MgO Tunnel Junctions With Perpendicular Magnetic Anisotropy

Publication Year: 2009, Page(s):3472 - 3475
Cited by:  Papers (4)
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Antiferromagnetic coupling between magnetic electrodes has been observed in non-epitaxial perpendicularly magnetized MgO tunnel junctions. This coupling becomes less negative with increasing annealing temperature up to 375degC. This can be possibly related to homogeneization of oxygen in the barrier and de-oxidation of the magnetic electrodes. However, the evolution of coupling field with both bar... View full abstract»

• ### Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier

Publication Year: 2009, Page(s):3476 - 3479
Cited by:  Papers (18)
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We studied the magnetic and magnetoresistance characteristics of pseudospin-valve magnetic tunnel junctions (MTJs) based on CoFe/Pd multilayer electrodes with perpendicular magnetic anisotropy and an MgO barrier. The MTJs at annealing temperature (T a) of 473 K showed a tunnel-magnetoresistance (TMR) ratio of 1.5%. An fcc (111)-oriented texture of the bottom and top Co90 View full abstract»

• ### Magnetoresistance Properties of Planar-Type Tunnel Junctions With Ferromagnetic Nanogap System Fabricated by Electromigration Method

Publication Year: 2009, Page(s):3480 - 3483
Cited by:  Papers (5)
| | PDF (727 KB) | HTML

We report electromigration techniques for the fabrication of planar-type tunnel junctions with ferromagnetic nanogap system. In these techniques, by monitoring the current passing through the devices, we are easily able to obtain the planar-type Ni-Vacuum-Ni tunnel junctions. In this paper, magnetoresistance (MR) properties of the planar-type Ni-based tunnel junctions formed by stepwise feedback-c... View full abstract»

• ### Thermal Magnetic Noise From Synthetic Antiferromagnets in Magnetoresistive Heads

Publication Year: 2009, Page(s):3484 - 3487
Cited by:  Papers (3)
| | PDF (379 KB) | HTML

Thermal magnetic noise in magnetoresistive read heads was studied extensively in recent years. It is believed that thermal magnetic noise is becoming the dominant noise source in read heads for hard-disk drive applications. Most previous work concentrated on magnetic white noise from free layers. This work shows that magnetic noise from a synthetic antiferromagnet can be comparable to that from a ... View full abstract»

## Aims & Scope

IEEE Transactions on Magnetics is a peer-reviewed, archival journal in science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The journal publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Pavel Kabos
National Institute of Standards and Technology