IEEE Circuits and Devices Magazine

Issue 1 • Jan 1995

Filter Results

Displaying Results 1 - 5 of 5
  • Switched-current oversampling converters

    Publication Year: 1995, Page(s):36 - 38
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (252 KB)

    There are many choices in designing a real-time signal processing system. To exploit the advantages that inexpensive digital CMOS process technologies provide, it is usually a good choice to use digital signal processing circuits extensively and to use analog circuits only as a bridge between the real analog world and digital signal processing circuits. The mixed analog/digital circuits usually ha... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Finite element analysis extends its domain

    Publication Year: 1995, Page(s):22 - 27
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (472 KB)

    Finite element analysis (FEA), traditionally used to predict stress and dynamic response in mechanical systems, is finding its way into a wider realm of electrical engineering applications. These tasks range from finding the temperature distribution in IC packages, to analyzing mechanical and electrical faults in disk drives. This article addresses the capabilities of such programs to solve critic... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • How do hot carriers degrade n-channel MOSFETs?

    Publication Year: 1995, Page(s):28 - 33
    Cited by:  Papers (13)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (640 KB)

    Explores the mechanisms of hot carrier degradation in n-MOSFETs. In addressing the problem of hot carrier degradation, we examine the carrier injection process, whereby electrons and holes are injected into the oxide from the channel. Next, we'll look at the processes responsible for creating damage. Third, the impact of the damage on the MOSFET's terminal characteristics is deternined. Then the d... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • SWEC speeds VLSI simulation

    Publication Year: 1995, Page(s):10 - 15
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (432 KB)

    A new simulator called SWEC (StepWise Equivalent Conductance) can efficiently simulate circuits with MOS transistors and passive elements. SWEC adopts four novel techniques: 1) stepwise equivalent conductance implicit integration, 2) piecewise-linear waveform event-driven simulation, 3) recursive convolution formulation based on the Pade approximation, and 4) interconnect partition, to achieve sig... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • 2001 needs for multi-level interconnect technology

    Publication Year: 1995, Page(s):16 - 21
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (408 KB)

    Looks at the materials and thermal alternatives for scaled, next-century VLSI/ULSI interconnects. It is shown that ad hoc executions of programs to calculate interconnect parameters for VLSI/ULSI design and analysis are too time-consuming to be practical. The tool used in this study to model a hypothetical interconnect system was Hewlett Packard's HTVE (HP Interconnect Value Extractor) View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.

Aims & Scope

IEEE Circuits and Devices Magazine (1985-2006) covers the design, implementation, packaging, and manufacture of micro-electronic and photonic devices, circuits and systems

 

This Magazine ceased publication in 2006.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Dr. Ronald W. Waynant
r.waynant@ieee.org