# IEEE Journal of Quantum Electronics

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Displaying Results 1 - 17 of 17
• ### Front cover

Publication Year: 2016, Article Sequence Number: 0001101
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• ### IEEE Journal of Quantum Electronics publication information

Publication Year: 2016, Article Sequence Number: 0002301
| PDF (96 KB)
• ### IEEE Journal of Quantum Electronics information for authors

Publication Year: 2016, Article Sequence Number: 0003501
| PDF (140 KB)
• ### Blank page

Publication Year: 2016, Article Sequence Number: 0004701
| PDF (2 KB)

Publication Year: 2016, Article Sequence Number: 0101101
| PDF (112 KB)
• ### Amplitude and Phase Noise of Frequency Combs Generated by Single-Section InAs/InP Quantum-Dash-Based Passively and Actively Mode-Locked Lasers

Publication Year: 2016, Article Sequence Number: 1300207
Cited by:  Papers (2)
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We investigate the amplitude and phase noise of an optical frequency comb based on InAs/InP quantum-dash mode-locked laser. The laser demonstrates low relative intensity noise (<; -125 dB/Hz) and phase noise in the passive modelocking regime. By actively mode-locking the laser, we observe a reduction in the flicker FM noise and timing jitter, as a result of which the optical linewidth decreases... View full abstract»

• ### Frequency Measurement of Far-Infrared Laser Emissions Generated by C-13 Methanol Isotopologues

Publication Year: 2016, Article Sequence Number: 1400104
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The C-13 methanol isotopologues 13CH3OH, 13CD3OD, and 13CHD2OH have individually served as the laser medium for an optically pumped molecular laser system used to generate far-infrared radiation. Once detected the frequencies of these laser emissions were measured using a heterodyne technique to a one-sigma fractional uncertainty no... View full abstract»

• ### Numerical Modeling of $3.5~ {\mu }\text{m}$ Dual-Wavelength Pumped Erbium-Doped Mid-Infrared Fiber Lasers

Publication Year: 2016, Article Sequence Number: 1600412
Cited by:  Papers (2)
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The performance of mid-infrared Er3+-doped fiber lasers has dramatically improved in the last few years. In this paper, we present a numerical model that provides valuable insight into the dynamics of a dual-wavelength pumped fiber laser that can operate on the 3.5and 2.8-μm bands. This model is a much needed tool for optimizing and understanding the performance of these laser sy... View full abstract»

• ### Dynamics and Stability of Mutually Coupled Nano-Lasers

Publication Year: 2016, Article Sequence Number: 2000306
Cited by:  Papers (7)
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The dynamics of mutually coupled nano-lasers has been explored theoretically. Calculations have been performed using rate equations which include the Purcell cavity-enhanced spontaneous emission factor F and the spontaneous emission coupling factor β. In the analysis, the influence of F and β has been evaluated for varying optical injection strength and distance between the two laser... View full abstract»

• ### 850-nm VCSELs With p-Type $\mathrm {{\delta }}$ -Doping in the Active Layers for Improved High-Speed and High-Temperature Performance

Publication Year: 2016, Article Sequence Number: 2400607
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In this paper, we study the influence of p-type modulation doping on the dynamic/static performance of high-speed 850-nm VCSELs with highly strained multiple quantum wells. The studied device structure has a 3/2 λ asymmetric cavity design, which can let the internal transit time of injected carriers be as short as that of 1/2 λ cavity design and further improve its performance in ter... View full abstract»

• ### Polarization Switching Characteristics of 1550-nm Vertical-Cavity Surface-Emitting Lasers Subject to Double Polarization Pulsed Injection

Publication Year: 2016, Article Sequence Number: 2400707
Cited by:  Papers (2)
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Based on the spin-flip model, the polarization switching (PS) characteristics of two polarization outputs in a 1550-nm vertical-cavity surface-emitting laser (1550-nm VCSEL) subject to double polarization pulsed injection (DPPI) are investigated theoretically, and the obtained results are compared with the case, in which the 1550-nm VCSEL is simultaneously injected by the pulses of orthogonal pola... View full abstract»

• ### Analysis of Threshold Currents and Transverse Modes in Nitride VCSELs With Different Resonators

Publication Year: 2016, Article Sequence Number: 2400807
Cited by:  Papers (1)
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This paper presents a comprehensive, self-consistent, room-temperature simulation of the operation of 414-nm nitride-based vertical-cavity surface-emitting lasers (VCSELs). We calculate the threshold currents and optical modes in a VCSEL structure based on the first continuous-wave nitride VCSEL reported to operate at room temperature, and in subsequent modifications of that structure. The effects... View full abstract»

• ### Wafer-Level Electroluminescence Metrology for InGaN Light-Emitting Diodes

Publication Year: 2016, Article Sequence Number: 3300406
| | PDF (1327 KB) | HTML

We present a reliable and fast characterization system that measures the electroluminescence (EL) of light-emitting diodes (LEDs) at the epi-wafer level. This “EL Q-check system” requires simple pre-processes for the measurement, circumventing the full chip-fabrication processes. The developed EL Q-check system consists of three parts: a CO2 laser for p-GaN ablation, a dia... View full abstract»

• ### Resonant Cavity Enhanced Thyristor-Based Photodetectors for Optical Receivers

Publication Year: 2016, Article Sequence Number: 4000404
Cited by:  Papers (1)
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A resonant-cavity thyristor photodetector based on the GaAs/AlGaAs material system is fabricated and characterized. The device is triggered with an optical input between a high impedance OFF-state and a low impedance ON-state. Peak linear slope efficiency of 4 A/W is obtained in the OFF-state at the resonant wavelength of 986.6 nm, and is greater than 1 A/W across a 5-nm spectral bandwidth. Operat... View full abstract»

• ### AlGaAs/GaAs Triple Quantum Well Photodetector at $5~\mu \text{m}$ Wavelength—A Simulation Study

Publication Year: 2016, Article Sequence Number: 4400108
Cited by:  Papers (6)
| | PDF (2655 KB) | HTML

A novel AlGaAs/GaAs triple quantum well (QW) photodetector at 5-μm wavelength has been proposed. The photodetector is designed with a double-resonance condition to achieve short tunneling time and large electron escape probability. The interface optical phonon modes and the phonon-assisted electron transition rates have been calculated. The electron escape probability is as high as 0.8 in t... View full abstract»

• ### Testing Random-Detector-Efficiency Countermeasure in a Commercial System Reveals a Breakable Unrealistic Assumption

Publication Year: 2016, Article Sequence Number: 8000211
Cited by:  Papers (8)
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In the last decade, efforts have been made to reconcile theoretical security with realistic imperfect implementations of quantum key distribution. Implementable countermeasures are proposed to patch the discovered loopholes. However, certain countermeasures are not as robust as would be expected. In this paper, we present a concrete example of ID Quantique's random-detector-efficiency countermeasu... View full abstract»

• ### Isolation of Weak Four-Wave Mixing Signal Components in Reflection Experiments

Publication Year: 2016, Article Sequence Number: 9100108
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Nonlinear spectroscopic experiments were performed on a quantum well in a reflective pump-probe geometry, detecting weak four-wave mixing signals copropagating with the excitation pulses. By demodulating the nonlinear response at unconventional frequencies, we were able to isolate individual terms contributing to the nonlinear signal. Signal components linear in the electric field amplitudes of ex... View full abstract»

## Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong