# IEEE Journal of Quantum Electronics

## Filter Results

Displaying Results 1 - 16 of 16
• ### Front cover

Publication Year: 2014, Page(s): C1
| PDF (297 KB)
• ### IEEE Journal of Quantum Electronics publication information

Publication Year: 2014, Page(s): C2
| PDF (126 KB)

Publication Year: 2014, Page(s):861 - 862
| PDF (111 KB)
• ### Design Optimization of Passively Mode-Locked Semiconductor Lasers With Intracavity Grating Spectral Filters

Publication Year: 2014, Page(s):1 - 11
| | PDF (3248 KB) | HTML

We consider design optimization of passively mode-locked two-section semiconductor lasers that incorporate intracavity grating spectral filters. Our goal is to develop a method for finding the optimal wavelength location for the filter in order to maximize the region of stable mode-locking as a function of drive current and reverse bias in the absorber section. In order to account for material dis... View full abstract»

• ### Effect of Relief Aperture on Single-Fundamental-Mode Emission of 1.3- $mu$ m GaInNAs GaAs-Based VCSELs

Publication Year: 2014, Page(s):1 - 8
| | PDF (1684 KB) | HTML

This paper investigates methods of suppressing higher order transverse modes in a GaInNAs/GaAs quantum-well GaAs-based vertical-cavity surface-emitting diode laser, with the aid of a 3-D self-consistent model. The inverted surface relief design, which creates the antiphase condition, proved efficient at suppressing higher order transverse modes, in spite of unfavorable thermal effects. View full abstract»

• ### Study of an Unsaturated PbSe QD-Doped Fiber Laser by Numerical Simulation and Experiment

Publication Year: 2014, Page(s):1 - 8
Cited by:  Papers (8)
| | PDF (2221 KB) | HTML

We describe an unsaturated gain-loss model in regards to colloidal PbSe quantum dot (QD)-doped fiber laser realized previously. Based on experimental observation on the laser, the numerical simulation on the model indicates there exists a pumping threshold that depends on the QD doping concentration. There is a defined range of doping concentration, within which the laser can be generated. Availab... View full abstract»

• ### Improvement to the Lateral Mode Stability in High-Power Laser Diodes by Multistripe-Gain Distribution

Publication Year: 2014, Page(s):890 - 897
Cited by:  Papers (1)
| | PDF (3601 KB) | HTML

Wide-stripe design for high-power laser diodes (LDs) permits multilateral-mode optical field distribution and the formation of an unstable filament pattern within the active waveguide. This is a serious drawback leading to a decrease in the emitted beam quality. The filaments cause spatial and time fluctuations in the LDs near- and far-field (FF) characteristics due to their random nature. The mul... View full abstract»

• ### Optical Properties of a Y-Splitter Based on Hybrid Multilayer Plasmonic Waveguide

Publication Year: 2014, Page(s):898 - 903
Cited by:  Papers (3)
| | PDF (1121 KB) | HTML

A Y-splitter based on hybrid multilayer plasmonic waveguide structure composed of silver–silica–silicon–silica–silver is introduced. Properties, such as the transmission rate and split ratio, are numerically investigated by changing the thickness of dielectric layers, bending radii of the bending parts, as well as input working wavelength. Results indicate that the prop... View full abstract»

• ### Design, Fabrication, and Characterizations of Novel Multispectral Photodetectors Using Postgrowth Fabry–Perot Optical Filters for Simultaneous Near Infrared/Short-Wave Infrared Detection

Publication Year: 2014, Page(s):1 - 7
Cited by:  Papers (1)
| | PDF (3205 KB) | HTML

A novel InP-based multispectral photodetector chip, using multiple Fabry-Perot resonant cavities integrated with photodectors, was designed, fabricated, and characterized. The integrated devices are capable of simultaneous wavelength detection at four wavelengths in the near infrared/short-wave infrared regime such as 1.32, 1.41, 1.49, and 1.66 μm. Experimental results show highly distingui... View full abstract»

• ### Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

Publication Year: 2014, Page(s):911 - 920
Cited by:  Papers (16)
| | PDF (2166 KB) | HTML

Internal quantum efficiency (IQE) of a blue high-brightness InGaN/GaN light-emitting diode (LED) was evaluated from the external quantum efficiency measured as a function of current at various temperatures ranged between 13 and 440 K. Processing the data with a novel evaluation procedure based on the ABC-model, we have determined the temperature-dependent IQE of the LED structure and light extract... View full abstract»

• ### Polarization Switching Regions of Optically Injected Long-Wavelength VCSELs

Publication Year: 2014, Page(s):921 - 928
Cited by:  Papers (6)
| | PDF (7143 KB) | HTML

We report on an experimental study of the injected optical power required for polarization switching (PS) in a vertical-cavity surface-emitting laser (VCSEL) subject to orthogonal optical injection. This power is found as a function of the frequency detuning between the injected light and suppressed linear polarization of the solitary VCSEL. Increasing the injected power, we found two types of PS ... View full abstract»

• ### Analysis of Amplification Characteristics of Surface Plasmon Polaritons Based on the Rate-Equation Theory

Publication Year: 2014, Page(s):929 - 936
Cited by:  Papers (1)
| | PDF (1605 KB) | HTML

A rate-equation theory model with the amplified spontaneous emission (ASE) effect considered for the surface plasmon polariton (SPP) waveguide amplifier is presented for analyzing the SPP amplifications with both side and SPP pumping techniques. By partitioning the cross section of the waveguide to suitable small units and introducing the overlapping integrated factor in each unit, the 3-D coupled... View full abstract»

• ### Corrections to “A Quasi-Analytic Modal Expansion Technique for Modeling Light Emission From Nanorod LEDs” [Sep 14 774-781]

Publication Year: 2014, Page(s):937 - 938
| | PDF (233 KB) | HTML

In the above-named paper, there was a minor error in the implementation of the transfer matrix method used to calculate the complex reflection coefficient $$r_{\mathrm {-}}$$ of the nanorod/GaN/sapphire trilayer. The formulas provided by Hecht [2] use the convention, where the phase of th... View full abstract»

• ### [Blank page]

Publication Year: 2014, Page(s):B939 - B940
| PDF (6 KB)
• ### IEEE Journal of Quantum Electronics information for authors

Publication Year: 2014, Page(s): C3
| PDF (100 KB)
• ### [Blank page - back cover]

Publication Year: 2014, Page(s): C4
| PDF (5 KB)

## Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong