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Circuits and Devices Magazine, IEEE

Issue 3 • Date May 1988

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  • Ultrashort light pulses

    Publication Year: 1988 , Page(s): 3 - 7
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (562 KB)  

    A tutorial review of the field of ultrashort-pulse generation and use is presented. A brief description of laser operation is followed by a discussion of how short pulses are created. The three techniques examined-active mode locking, passive mode locking, and passive mode locking with pulse compression-produce successively shorter pulses. The potential application of ultrashort pulses to high-spe... View full abstract»

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  • Parasitic transistor effects in CMOS VLSI

    Publication Year: 1988 , Page(s): 8 - 13
    Cited by:  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (755 KB)  

    Parasitic field-effect transistor (FETs) and bipolar junction transistors (BJTs) in a CMOS circuit are described, along with their interactions with each other and their effect on circuit performance. The results are considered to be useful for setting up design rules between n-channel and p-channel active transistors in CMOS IC layout. Novel parasitic transistors associated with next-generation V... View full abstract»

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Aims & Scope

IEEE Circuits and Devices Magazine (1985-2006) covers the design, implementation, packaging, and manufacture of micro-electronic and photonic devices, circuits and systems

 

This Magazine ceased publication in 2006.

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Meet Our Editors

Editor-in-Chief
Dr. Ronald W. Waynant
r.waynant@ieee.org