# IEEE Journal of Selected Topics in Quantum Electronics

## Filter Results

Displaying Results 1 - 25 of 59
• ### [Front cover]

Publication Year: 2014, Article Sequence Number: 0001301
| PDF (159 KB)
• ### IEEE Journal of Selected Topics in Quantum Electronics publication information

Publication Year: 2014, Article Sequence Number: 0001401
| PDF (138 KB)
• ### IEEE Journal of Selected Topics in Quantum Electronics information for authors

Publication Year: 2014, Article Sequence Number: 0001501
| PDF (106 KB)
• ### IEEE Journal of Selected Topics in Quantum Electronics subject categories for article numbering

Publication Year: 2014, Article Sequence Number: 0001601
| PDF (283 KB)

Publication Year: 2014, Article Sequence Number: 0100404
| PDF (157 KB)
• ### Harmonically Mode-Locked Hybrid Silicon Laser With Intra-Cavity Filter to Suppress Supermode Noise

Publication Year: 2014, Article Sequence Number: 1100208
Cited by:  Papers (8)
| | PDF (5985 KB) | HTML

We present results from two hybrid silicon mode-locked lasers, each with a 2 GHz cavity and one with an intra-cavity ring resonator filter. We compare the performance of the two lasers with respect to the harmonic mode-locking behavior at 20 GHz, i.e., the tenth harmonic. The filter based laser design passively mode-locked at 20 GHz with an electrical spur mode suppression >45 dB. Furthermore, ... View full abstract»

• ### Study of Carrier Statistics in Uniaxially Strained Ge for a Low-Threshold Ge Laser

Publication Year: 2014, Article Sequence Number: 1500107
Cited by:  Papers (8)  |  Patents (1)
| | PDF (481 KB) | HTML

In this paper, we present a comprehensive study of carrier statistics in germanium with high uniaxial strain along the [100] direction. Several types of PL experiments were conducted to investigate polarization-, temperature- and excitation-dependent carrier statistics in germanium under various amounts of uniaxial strain. With the ability to clearly resolve multiple photoluminescence peaks origin... View full abstract»

• ### Demonstration and Characterization of High-Speed Silicon Depletion-Mode Mach–Zehnder Modulators

Publication Year: 2014, Article Sequence Number: 3400110
Cited by:  Papers (9)
| | PDF (1292 KB) | HTML

High-speed silicon depletion-mode Mach-Zehnder modulators are demonstrated and characterized in this paper. Based on the structural dimensions and material parameters, transmission-line parameters and frequency response performances of the modulators are calculated and predicted by a proposed distributed circuit model. Parasitic coupled-slotline mode excited by the modulator is analyzed and suppre... View full abstract»

• ### Advances Toward Ge/SiGe Quantum-Well Waveguide Modulators at 1.3μm

Publication Year: 2014, Article Sequence Number: 3400207
Cited by:  Papers (10)  |  Patents (1)
| | PDF (825 KB) | HTML

The paper reports on the developments of Ge/SiGe quantum well (QW) waveguide modulators operating at 1.3 μm. Two modulator configurations have been studied: The first one is based on QW structures grown on a 13-μm SiGe buffer on bulk silicon. Light was directly coupled and propagated in Ge/Si0.35Ge0.65 QWs. Using a 3-μm-wide and 50-μm-long modulato... View full abstract»

• ### λ-Size ITO and Graphene-Based Electro-Optic Modulators on SOI

Publication Year: 2014, Article Sequence Number: 3400310
Cited by:  Papers (14)
| | PDF (1100 KB) | HTML

One of the key devices that convert electronic signals into high bit-rate photonic data is the electro-optic modulator (EOM). Its on-chip design plays an important role for the integration of electronic and photonic devices for various types of applications including photonic computing and telecommunication. Recently, indium tin oxide (ITO) and graphene have attracted significant attention primari... View full abstract»

• ### Investigation of Random Telegraph Noise in the Dark Current of Germanium Waveguide Photodetector

Publication Year: 2014, Article Sequence Number: 3800306
| | PDF (4283 KB) | HTML

Dark current variations in the germanium waveguide photodetector were investigated. Contributing to the time dependent dark current variations, random telegraph noise (RTN) was observed and studied for the first time. The RTN at different reverse biases and temperatures were measured. By analyzing the capture and emission time constants, the single trap that was responsible for RTN was estimated t... View full abstract»

• ### On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide

Publication Year: 2014, Article Sequence Number: 3800408
Cited by:  Papers (7)
| | PDF (4357 KB) | HTML

We investigate the photocurrent generation with surface-state absorption effect in a silicon waveguide integrated with periodically interleaved p-n junctions. Due to the high electric field (~5 × 105 V/cm) and large depletion area coverage in the waveguide, our device can collect more photocurrent than regular p-i-n and p-n structures. The responsivity of our device is optical po... View full abstract»

• ### Contributions of Franz–Keldysh and Avalanche Effects to Responsivity of a Germanium Waveguide Photodiode in the $hbox{L}$-Band

Publication Year: 2014, Article Sequence Number: 3800507
Cited by:  Papers (5)
| | PDF (4379 KB) | HTML

When driven with a high-voltage reverse bias of 15 V, a germanium photodiode with a silicon waveguide exhibits responsivity of over 1.14 A/W in the entire C-and L-bands. The high responsivity in the L-band is due to Franz-Keldysh (F-K) and avalanche effects. We prove by numerical calculation that the high responsivity under high bias driving is due to both effects. For accuracy in the calculation,... View full abstract»

• ### Modeling the Optical Properties of Low-Cost Colloidal Quantum Dot Functionalized Strip SOI Waveguides

Publication Year: 2014, Article Sequence Number: 4400306
Cited by:  Papers (3)
| | PDF (1014 KB) | HTML

We studied the optical absorption of silicon-on-insulator strip waveguides functionalized by a monolayer of colloidal PbS/CdS core/shell quantum dots. The integration is done by Langmuir-Blodgett deposition, which results in a monolayer of quantum dots (QDs) on the waveguides. Experimental absorption coefficients of QD functionalized strip waveguides range from 10-30 cm-1. These values ... View full abstract»

• ### Numerical Modeling of the Optical Multiplexer on SOI Constructed by Multiple Coupled Waveguides

Publication Year: 2014, Article Sequence Number: 4500208
Cited by:  Papers (4)
| | PDF (608 KB) | HTML

A new tunable optical multiplexer which utilized multiple coupled silicon wire waveguides on SOI structures is proposed and numerically studied. For the study, a modified effective index method, which utilizes the combined index profile with two spatial parameters, has been used. It correctly describes, in the 2-D case (with the 1% error), both the phase and the group indexes in a 3-D silicon wire... View full abstract»

• ### Metal Nanoridges in Hollow Si-Loaded Plasmonic Waveguides for Optimal Mode Properties and Ultra-Compact Photonic Devices

Publication Year: 2014, Article Sequence Number: 4600409
| | PDF (734 KB) | HTML

To achieve subwavelength mode confinement, we propose a hybrid plasmonic waveguide consisting of a metal nanoridge embedded in a silica-covered hollow silicon ridge waveguide on a metal substrate. The mode confinement, propagation length, and figure of merit are optimized by controlling the geometry of the waveguide. At the optimal figure of merit, the normalized mode area of 3.0 × 10-... View full abstract»

• ### Development of Polycrystalline Silicon Based Photonic Crystal Membrane for Mid-Infrared Applications

Publication Year: 2014, Article Sequence Number: 4900107
Cited by:  Papers (8)
| | PDF (553 KB) | HTML

Free-standing polycrystalline silicon (Si) based photonic crystal (PhC) membranes with etched circular and square holes are developed to display high reflectivity in the mid-infrared (MIR) region. Greater than 90% reflection was measured in the MIR wavelengths around 3.58 μm. By using square air holes in the PhC membrane, the mechanical strength of the polycrystalline Si membrane can be enh... View full abstract»

• ### Characterization of Integrated Optical Strain Sensors Based on Silicon Waveguides

Publication Year: 2014, Article Sequence Number: 5900110
Cited by:  Papers (2)
| | PDF (920 KB) | HTML

Microscale strain gauges are widely used in micro electro-mechanical systems (MEMS) to measure strains such as those induced by force, acceleration, pressure or sound. We propose all-optical strain sensors based on micro-ring resonators to be integrated with MEMS. We characterized the strain-induced shift of the resonances of such devices. Depending on the width of the waveguide and the orientatio... View full abstract»

• ### Intra-Cavity Dispersion of Microresonators and its Engineering for Octave-Spanning Kerr Frequency Comb Generation

Publication Year: 2014, Article Sequence Number: 5900207
Cited by:  Papers (2)
| | PDF (719 KB) | HTML

We present an analysis on intra-cavity dispersion of a micro-resonator. As an example, different dispersion sources of a silicon nitride microring resonator are identified and evaluated over a wide wavelength range. We also show the dispersion flattening technique based on a strip/slot hybrid waveguide structure can be used to tailor the intra-cavity dispersions. Octave-spanning Kerr frequency com... View full abstract»

• ### Ultrafast All-Optical Flip-Flops, Simultaneous Comparator-Decoder and Reconfigurable Logic Unit With Silicon Microring Resonator Switches

Publication Year: 2014, Article Sequence Number: 5900308
Cited by:  Papers (7)
| | PDF (2829 KB) | HTML

We present designs of all-optical SR, clocked-SR, D and T flip-flops, simultaneous single-bit comparator-decoder and reconfigurable logic unit based on all-optical switching by two-photon absorption induced free-carrier injection in silicon 2 × 2 add-drop microring resonators. The proposed circuits have been theoretically analyzed using time-domain coupled-mode theory and all-optical switch... View full abstract»

• ### Optical Crosspoint Matrix Using Broadband Resonant Switches

Publication Year: 2014, Article Sequence Number: 5900410
Cited by:  Papers (11)
| | PDF (888 KB) | HTML

A low loss, broadband crosspoint switch matrix using high-order resonant optical switch elements is designed, and fabricated for the first time. Multi-path routing is demonstrated for a broad range of representative paths across the circuit. Connections are assessed between eight inputs and four outputs to show losses as low as 0.9 dB per off state ring and 2.0 dB per on state ring. Analysis of th... View full abstract»

• ### Towards Adaptively Tuned Silicon Microring Resonators for Optical Networks-on-Chip Applications

Publication Year: 2014, Article Sequence Number: 5900514
Cited by:  Papers (27)
| | PDF (8487 KB) | HTML

We propose to monitor the spectral alignment of silicon microring resonators with an optical carrier in the 1300 / 1550 nm wavelengths by photodetecting the microring internal power using a defect-state-absorption-based silicon photodetector integrated along the microring. We can thereby adaptively tune the resonance wavelength based on the photocurrent to compensate the spectral misalignment usin... View full abstract»

• ### Monolithic Silicon Photonic Integrated Circuits for Compact 100 $^{+}$Gb/s Coherent Optical Receivers and Transmitters

Publication Year: 2014, Article Sequence Number: 6100108
Cited by:  Papers (30)
| | PDF (6683 KB) | HTML

We present silicon photonic integrated circuits (PICs) based coherent optical transmitters and receivers for high-speed long-distance fiber optical transmission. High-degree photonic integration is achieved by monolithically integrating silicon electro-optic modulators, germanium photo detectors, silicon nitride-assisted on-chip polarization rotators, thermal phase shifters, and various passive si... View full abstract»

• ### Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

Publication Year: 2014, Article Sequence Number: 6100213
Cited by:  Papers (35)  |  Patents (4)
| | PDF (1405 KB) | HTML

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon ben... View full abstract»

• ### Cavity-Waveguide Coupling Engineered High Sensitivity Silicon Photonic Crystal Microcavity Biosensors With High Yield

Publication Year: 2014, Article Sequence Number: 6900710
Cited by:  Papers (7)
| | PDF (793 KB) | HTML

We present a high yield and high sensitivity on-chip biosensing system by combining subwavelength grating coupling and high sensitivity photonic crystal microcavity side coupled to a photonic crystal waveguide. 80% yield of working devices was experimentally demonstrated for sensitivity engineered L13 photonic crystal microcavities and 70% for L21 photonic crystal microcavities. Subwavelength grat... View full abstract»

## Aims & Scope

Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. José Capmany
Universitat Politècnica de València, Spain Photonics Research Labs, ITEAM Research Institute
Virginia Polytechnic Institute & State University