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IEEE Circuits and Devices Magazine

Issue 6 • Date Nov. 1993

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  • Compact blue-green lasers get down to business

    Publication Year: 1993, Page(s):18 - 22
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (580 KB)

    The development of solid-state, blue-green lasers, which are emerging as viable alternatives to air-cooled argon and helium-cadmium lasers for such applications as flourescent bioanalysis, optical inspection, and high-end reprographics, is summarized. Methods of efficient doubling in diode-pumped lasers, direct doubling, second harmonic generation in waveguides, and intracavity frequency mixing ar... View full abstract»

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  • White noise in MOS transistors and resistors

    Publication Year: 1993, Page(s):23 - 29
    Cited by:  Papers (67)  |  Patents (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (663 KB)

    The theoretical and experimental results for white noise in the low-power subthreshold region of operation of an MOS transistor are discussed. It is shown that the measurements are consistent with the theoretical predictions. Measurements of noise in photoreceptors-circuits containing a photodiode and an MOS transistor-that are consistent with theory are reported. The photoreceptor noise measureme... View full abstract»

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  • Spin-on films add new dimension to ULSI circuits

    Publication Year: 1993, Page(s):30 - 34
    Cited by:  Papers (1)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (431 KB)

    Spin-on oxide films, natural candidates for improving interlevel dielectric planarization in ULSI circuits, are reviewed. The spin-on process, one in which a thin film is produced by spin-casting a liquid on a rotating wafer, is described. Spin-on films combine the planarization capabilities of a fluid with the dielectric properties of an oxide. They fill all the lower regions over the wafer and p... View full abstract»

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  • Remodeling the p-n junction

    Publication Year: 1993, Page(s):35 - 37
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (250 KB)

    A new expression for the p-n junction that uses experimentally derived parameters that are more easily measured than those derived from theory is presented. This approach is useful when designing circuits that use diodes and transistors as diodes, such as thermometers, logarithmic amplifiers, and voltage-reference sources.<> View full abstract»

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IEEE Circuits and Devices Magazine (1985-2006) covers the design, implementation, packaging, and manufacture of micro-electronic and photonic devices, circuits and systems

 

This Magazine ceased publication in 2006.

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Editor-in-Chief
Dr. Ronald W. Waynant
r.waynant@ieee.org