# IEEE Journal of Quantum Electronics

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Displaying Results 1 - 25 of 25
• ### [Front cover]

Publication Year: 2013, Page(s): C1
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• ### IEEE Journal of Quantum Electronics publication information

Publication Year: 2013, Page(s): C2
| PDF (33 KB)

Publication Year: 2013, Page(s):1 - 2
| PDF (113 KB)
• ### Numerical Analysis of Passively Mode-Locked Quantum-Dot Lasers With Absorber Section at the Low-Reflectivity Output Facet

Publication Year: 2013, Page(s):3 - 10
Cited by:  Papers (6)
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In this paper, we present a theoretical study on the optimization of passively mode-locked quantum dot lasers based on an alternative cavity design. In particular, we investigate a geometry in which the saturable absorber is located near the low reflection facet of the chip (output facet). The investigation is carried out by means of a time-domain traveling wave numerical model for quantum-dot act... View full abstract»

• ### On the Radiation Profiles and Light Extraction of Vertical LEDs With Hybrid Nanopattern and Truncated Microdome Surface Textures

Publication Year: 2013, Page(s):11 - 16
Cited by:  Papers (8)
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The n-side-up vertical light emitting diodes (LEDs) have the advantage of carving the surface of the thick n-GaN layer to improve light extraction and to adjust radiation profiles. In this paper, a two-step surface patterning is employed with the focus on understanding angular light diffractions from both nanopatterns and truncated microdomes. Light output enhancement of the LEDs with hybrid surfa... View full abstract»

• ### Simulation of High-Efficiency GaN/InGaN p-i-n Solar Cell With Suppressed Polarization and Barrier Effects

Publication Year: 2013, Page(s):17 - 23
Cited by:  Papers (11)
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The photovoltaic characteristics of Ga-face GaN/InGaN p-i-n solar cells are investigated numerically. The severe polarization and barrier effects induced by the GaN/InGaN hetero-interfaces are demonstrated to be detrimental for the carrier collection. The conversion efficiency could be degraded to be out of application when the degree of polarization and/or indium composition are high. To efficien... View full abstract»

• ### Design and Fabrication of 1.35-$mu{rm m}$ Laser Diodes With Full Digital-Alloy InGaAlAs MQW

Publication Year: 2013, Page(s):24 - 30
Cited by:  Papers (3)
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We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical con... View full abstract»

• ### Delayed Feedback Dynamics of Liénard-Type Resonant Tunneling-Photo-Detector Optoelectronic Oscillators

Publication Year: 2013, Page(s):31 - 42
Cited by:  Papers (18)
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We use the nonlinear dynamics approach for studying delayed feedback optoelectronic oscillators (OEOs) formed by hybrid integration of resonant tunneling diode (RTD) photo-detectors with laser diodes, in both single and dual optical fiber feedback routes. In the single loop topology, the performance of the RTD-OEO free-running self-sustained oscillator is improved in terms of phase noise, with a c... View full abstract»

• ### Novel Approach for Controllable Polarization Beam Splitter: Design and Simulation

Publication Year: 2013, Page(s):43 - 50
Cited by:  Papers (2)
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A novel controllable polarization beam splitter is designed by using the modified Y-branch waveguide structure, in which the nematic liquid crystal is introduced. The optical performance of the polarization beam splitter is numerically investigated by the beam propagation method. The results show that not only can high extinction ratio and low optical loss be easily achieved, but also the output p... View full abstract»

• ### Numerical Analysis of Ultrafast Performances of All-Optical Logic-Gate Devices Integrated With InAs QD-SOA and Ring Resonators

Publication Year: 2013, Page(s):51 - 58
Cited by:  Papers (10)
| | PDF (2396 KB) | HTML

We analytically investigate the ultrafast dynamic behavior of the proposed optical XNOR and and logic gate devices, composed of a monolithically integrated highly stacked InAs quantum dot semiconductor optical amplifier (SOA) and fabricated with the strain compensation technique and ring resonators. The calculated results indicate that the integrated device can operate in the logic gate functions ... View full abstract»

• ### Corrections to “Common-Mode Cancellation in Sinusoidal Gating With Balanced InGaAs/InP Single Photon Avalanche Diodes” [Dec 12 1505-1511]

Publication Year: 2013, Page(s): 59
Cited by:  Papers (1)
| | PDF (70 KB) | HTML

In the above paper (ibid., vol. 48, no. 12, pp. 1505-1511, Dec. 2012), the authors appeared in the wrong order. They should have appeared as follows: Zhiwen Lu, Wenlu Sun, Joe C. Campbell, Fellow, IEEE, Xudong Jiang, and Mark A. Itzler, Fellow, IEEE. View full abstract»

• ### Mid-Infrared Quantum Cascade Lasers With Electrical Control of the Emission Frequency

Publication Year: 2013, Page(s):60 - 64
Cited by:  Papers (7)
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We discuss the design of mid-infrared quantum cascade lasers in which the emission frequency can be rapidly modulated by applied bias voltage. The devices are based on integrating a layer with voltage-variable refractive index, based on Stark-tunable inter-sub-band transitions, below the laser active region. A three-terminal configuration is used to independently bias the laser active region and t... View full abstract»

• ### Quantum Dot Passively Mode-Locked Lasers: Relation Between Intracavity Pulse Evolution and Mode Locking Performances

Publication Year: 2013, Page(s):65 - 71
Cited by:  Papers (2)
| | PDF (1152 KB) | HTML

We present a systematic investigation of the passively mode-locked (ML) quantum dot lasers using a Finite Difference Traveling Wave model. Device structural parameters, such as the saturable absorber (SA) length, the total cavity length, and the facets reflectivity, have been varied. The obtained results indicate a strict relation between the ML performances and the intracavity evolution of the fo... View full abstract»

• ### Theoretical Study of Metal-Insulator-Metal Tunneling Diode Figures of Merit

Publication Year: 2013, Page(s):72 - 79
Cited by:  Papers (13)
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The performance of metal-insulator-metal (MIM) diodes is investigated. In this paper, we derive an analytical model that uses the Transfer Matrix Method based on the Airy Functions (AF-TMM) for the tunneling transmission probability through any number of insulating layers. The fast-computing AF-TMM simulator results show a complete matching with the numerical Non-Equilibrium Green's Function and a... View full abstract»

• ### Properties of Mode-Locked Optical Pulses in a Dispersion-Managed Fiber-Ring Laser Using Semiconductor Optical Amplifier as Active Device

Publication Year: 2013, Page(s):80 - 88
Cited by:  Papers (3)
| | PDF (695 KB) | HTML

A hybrid model is proposed in order to exploit the idea of compensating semiconductor optical amplifiers (SOAs) nonlinearity by adjusting cavity dispersion in a SOA-fiber ring mode-locked laser. The model is checked by analytical as well as experimental results. Excellent agreement is obtained in both cases. It is predicted that, once the cavity dispersion is correctly adjusted, the mode-locked pu... View full abstract»

• ### Capacitive-Discharge-Pumped CuBr Laser With 12 W Average Output Power

Publication Year: 2013, Page(s):89 - 94
Cited by:  Papers (2)
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This paper presents the study of the energy characteristics of a medium scale CuBr laser (1130 cm3 active volume) pumped by a longitudinal capacitive discharge. The output power dependences on the equivalent operating capacitance and on the ratio of high-voltage and ground electrode capacitances are studied. The best characteristics are obtained when the high-voltage electrode capacitan... View full abstract»

• ### Effects of Yb/Tm Concentration and Pump Wavelength on the Performance of Ytterbium-Sensitized Thulium-Doped Fiber Laser

Publication Year: 2013, Page(s):95 - 99
Cited by:  Papers (2)
| | PDF (395 KB) | HTML

A 1901.6-nm laser is demonstrated using the newly developed double-clad ytterbium-thulium-doped fiber (YTDF) samples in conjunction with 931-nm pumping through the transition of thulium ion from 3F4 to 3H6 with the assistance of ytterbium to thulium-ion energy transfer. The YTDF used was drawn from a D-shape preform, which was fabricated using the modifi... View full abstract»

• ### Thermodynamic Analysis of End-Pumped Fiber Lasers Subjected to Surface Cooling

Publication Year: 2013, Page(s):100 - 107
Cited by:  Papers (5)
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In this paper, the temperature distribution is derived analytically within a fiber laser end pumped by a top-hat beam subjected to an external convection at the cladding surface. The temperature distribution is obtained through considering the radial heat conduction and neglecting the axial heat conduction due to large aspect ratio. An expression for the volumetric entropy generation rate within t... View full abstract»

• ### InGaAs/GaAs Multiple-Quantum-Well Semiconductor Disk Laser Pumped With Electron Beam

Publication Year: 2013, Page(s):108 - 113
Cited by:  Papers (2)
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We report an electron-beam-pumped vertical-external-cavity surface-emitting laser [or semiconductor disk laser (SDL)] on the basis of InGaAs/GaAs multiple-quantum-well structure grown monolithically by molecular-beam epitaxy together with high-reflective AlGaAs/GaAs distributed Bragg reflector. The auxiliary mirror of the optical cavity is spherical with 20- or 30-mm radius of curvature and a tran... View full abstract»

• ### Metal-Cavity Surface-Emitting Nanolasers

Publication Year: 2013, Page(s):114 - 121
Cited by:  Papers (6)
| | PDF (917 KB) | HTML

A new type of surface-emitting nanolasers with a metal cavity is proposed and analyzed for potential use in future optical interconnects. Rather than using the surface mode of the metallic waveguide, the design uses the low-loss optical fiber HE11 mode. An analytical Fabry-Pérot model is formulated to include the nanocavity effect. A numerical model based on the FDTD method is a... View full abstract»

• ### Dressed Four-Wave Mixing From Upper Branch in a Sodium Atomic Vapor

Publication Year: 2013, Page(s):122 - 126
Cited by:  Papers (2)
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With electromagnetically induced transparency-assisted configuration, a four-wave mixing (FWM) process generated from the upper branch of a cascade-type three-level atomic system is studied both theoretically and experimentally. Through the advantage of neglecting the absorption of a FWM signal due to a much smaller transition probability of a two-photon process, we easily observe the Autler-Towne... View full abstract»

• ### 830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence Characteristics

Publication Year: 2013, Page(s):127 - 132
Cited by:  Papers (4)
| | PDF (653 KB) | HTML

The 830-nm AlGaAs/InGaAs laser diodes (LDs) adopting multistep-graded index double-barrier separate confinement heterostructures (GRIN-DBSCHs) with small divergence beams and improved temperature characteristics under a high-output-power operation are reported. The double-barrier separate confinement heterostructure (DBSCH) design provides good carrier confinement and prevents current leakage by a... View full abstract»

• ### [Blank page]

Publication Year: 2013, Page(s):133 - 134
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• ### IEEE Journal of Quantum Electronics information for authors

Publication Year: 2013, Page(s): C3
| PDF (28 KB)
• ### [Blank page - back cover]

Publication Year: 2013, Page(s): C4
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## Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong