IEEE Circuits and Devices Magazine

Issue 4 • July 1985

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  • [Front cover]

    Publication Year: 1985, Page(s): c1
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  • [Inside front cover]

    Publication Year: 1985, Page(s): c2
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  • [Advertisements]

    Publication Year: 1985, Page(s): 1
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  • [Advertisements]

    Publication Year: 1985, Page(s): 1
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  • Contents

    Publication Year: 1985, Page(s): 1
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  • [List of staff]

    Publication Year: 1985, Page(s): 4
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  • Editor in chief

    Publication Year: 1985, Page(s): 5
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  • Letter to the editor in chief

    Publication Year: 1985, Page(s): 5
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  • TRACAS: An automatic router for circuits designed with the MDMOS symbolism

    Publication Year: 1985, Page(s):6 - 13
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (23605 KB)

    MDMOS is a gate symbolism developed by the CNET in 1978. The author describes TRACAS, an automatic router especially designed for MDMOS circuits which is highly efficient in terms of CPU time and gate density. The percentage of net completion lies between 95% and 100%, and the increase in area ranges from 0 to 10% only. The algorithms and methods explained by the author could easily be extended to... View full abstract»

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  • A frequency division multiplexing system designed on the basis of an abrupt filter

    Publication Year: 1985, Page(s):14 - 23
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (44576 KB)

    An FM-FM telemetry system is described analytically. The system is especially suitable for transmitting seismology or magnetotelluric measurements, and it is designed on the basis of an abrupt bandpass filter that permits insertion of more than the usual number of channels in a given telephone band. View full abstract»

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  • Point defect yield model for wafer scale integration

    Publication Year: 1985, Page(s):24 - 34
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (24580 KB)

    Yield projections are a primary consideration in wafer scale integration. The author develops a point defect yield model for a two-way redundancy scheme appropriate for random logic. The model assumes that the fault-causing defects are randomly distributed locally but that the defect density can vary across a wafer as well as from one wafer to another. Examples are given to illustrate the strong d... View full abstract»

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  • New high-speed (Al, Ga) as modulation doped field-effect transistors

    Publication Year: 1985, Page(s):35 - 38
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (3707 KB)

    Recent advances in the fabrication technology of compound semiconductors have made possible the development of a new type of device called the modulation doped field-effect transistor (MODFET) which is capable of higher speeds than conventional FETs because its conduction electrons can move faster. These higher electron velocities in MODFETs are due to the fact that the electrons are spatially sep... View full abstract»

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  • Interconnection lengths and VLSI

    Publication Year: 1985, Page(s):39 - 42
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (3477 KB)

    It is found that average interconnection lengths in a very large scale integrated (VLSI) circuit that is functionally partitioned do not continue to increase as device sizes are scaled down and chips become more densely packed. Although pin requirements still increase, this increase is much smaller than expected from common expressions of Rent's rule. These results suggest that the important dimen... View full abstract»

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  • News and events

    Publication Year: 1985, Page(s):43 - 46
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  • Conferences and meetings

    Publication Year: 1985, Page(s): 47
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  • Book review

    Publication Year: 1985, Page(s):48 - 49
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  • Elections

    Publication Year: 1985, Page(s):50 - 51
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  • New products

    Publication Year: 1985, Page(s): 54
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  • Information for authors

    Publication Year: 1985, Page(s): 55
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  • [Advertisements]

    Publication Year: 1985, Page(s):56 - 57
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  • [Advertisements]

    Publication Year: 1985, Page(s):1 - 2
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  • [Advertisements]

    Publication Year: 1985, Page(s): 1
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  • [Inside back cover]

    Publication Year: 1985, Page(s): c3
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  • [Back cover]

    Publication Year: 1985, Page(s): c4
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Aims & Scope

IEEE Circuits and Devices Magazine (1985-2006) covers the design, implementation, packaging, and manufacture of micro-electronic and photonic devices, circuits and systems

 

This Magazine ceased publication in 2006.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Dr. Ronald W. Waynant
r.waynant@ieee.org