# IEEE Journal of Quantum Electronics

## Filter Results

Displaying Results 1 - 22 of 22
• ### [Front cover]

Publication Year: 2012, Page(s): C1
| PDF (248 KB)
• ### IEEE Journal of Quantum Electronics publication information

Publication Year: 2012, Page(s): C2
| PDF (33 KB)

Publication Year: 2012, Page(s):441 - 442
| PDF (35 KB)
• ### Electrically Tunable Microfiber Knot Resonator Based Erbium-Doped Fiber Laser

Publication Year: 2012, Page(s):443 - 446
Cited by:  Papers (18)
| | PDF (377 KB) | HTML

A compact and tunable fiber laser is demonstrated using a microfiber knot resonator structure made by a highly doped Erbium fiber. A stable laser output is achieved at the 1533-nm region with a signal to noise ratio of 15 dB using a 63-mW 980-nm pump power. With the assistance of a copper wire touching the circumference of the ring, operating wavelength of the proposed laser can be tuned by inject... View full abstract»

• ### Theoretical Analysis of Partial-Spatial Q-Switching Dynamics Using a Two-Level ${rm CO}_{2}$ Laser Model

Publication Year: 2012, Page(s):447 - 453
Cited by:  Papers (3)
| | PDF (804 KB) | HTML

A detailed numerical study of the dynamic behavior of a Q-switched CO2 laser under partial spatial modulation conditions is presented. The Q-switching performance is strongly related to the switching speed and modulation depth of the modulator. The switching speed of most of the modulator principles are typically limited by one or more geometrical dimensions of the modulator. For exampl... View full abstract»

• ### Numerical Modeling and Optimization of Diode Pumped Heavily-Erbium-Doped Fluoride Fiber Lasers

Publication Year: 2012, Page(s):454 - 464
Cited by:  Papers (13)
| | PDF (606 KB) | HTML

Numerical modeling of heavily-erbium-doped fluoride fiber lasers is presented. Calculations from the model were compared with all previously reported experimental demonstrations of heavily-erbium-doped fluoride fiber lasers. Commensurate with recent modeling studies, good agreement with the measurements was achieved with the use of scaled-down rate parameters for energy transfer that corresponds t... View full abstract»

• ### Asymmetric Heterostructure With Reduced Distance From Active Region to Heatsink for 810-nm Range High-Power Laser Diodes

Publication Year: 2012, Page(s):465 - 471
Cited by:  Papers (14)
| | PDF (1218 KB) | HTML

An asymmetric heterostructure design has been proposed to meet high-power laser diode (LD) requirements, such as a high catastrophic optical damage threshold, a low internal loss, low thermal and electrical resistances and a low vertical beam divergence. The asymmetry has been designed to shift the optical field in heterostructure waveguide toward the n-side, where losses are lower than those at t... View full abstract»

• ### Interference in a Quantum Channel Due to Classical Four-Wave Mixing in Optical Fibers

Publication Year: 2012, Page(s):472 - 479
Cited by:  Papers (6)
| | PDF (804 KB) | HTML

The second-order coherence function for idler photons generated through stimulated four-wave mixing (FWM) is theoretically derived, considering both spontaneous and stimulated Raman contributions. Two distinct cases and two different power regimes are analyzed. First, we consider that the idler wave is fully generated inside the fiber. In a second scenario, we admit that at the fiber input there e... View full abstract»

• ### Analysis of Maximum Extractable Power of Single-Frequency ${rm Yb}^{3+}$-Doped Phosphate Fiber Sources

Publication Year: 2012, Page(s):480 - 484
Cited by:  Papers (6)
| | PDF (450 KB) | HTML

We analyze the physical limits on the maximum extractable power of the single-frequency Yb3+-doped phosphate fiber lasers and amplifiers. Our analysis indicates that the maximum extractable power of the single-frequency Yb3+-doped phosphate fiber sources are limited by pump brightness, optical damage, melt of the core, stimulated Brillouin scattering (SBS) and thermal lens, a... View full abstract»

• ### Thermal Effects in High-Power Double Diode-End-Pumped Cs Vapor Lasers

Publication Year: 2012, Page(s):485 - 489
Cited by:  Papers (12)
| | PDF (461 KB) | HTML

Assuming the pump light to be Gaussian beam and considering the nonlinear absorption of the medium, we establish the heat conduction model to describe the thermal effects in a double end-pumped Cs vapor laser. Combined with the experimental parameters, the radial temperature distribution and accordingly the optical path difference under different pump powers are obtained by numerically solving the... View full abstract»

• ### Performance Analysis on Using Period-One Oscillation of Optically Injected Semiconductor Lasers for Radio-Over-Fiber Uplinks

Publication Year: 2012, Page(s):490 - 499
Cited by:  Papers (17)
| | PDF (1444 KB) | HTML

Nonlinear period-one (P1) dynamics of a semiconductor laser are investigated for radio-over-fiber uplink transmission. By optical injection locking, the laser in a base station is driven into the P1 oscillation state, which is further locked by the uplink microwave signal through modulation on the bias current. Due to double locking by both the optical injection and current modulation, the uplink ... View full abstract»

• ### Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes

Publication Year: 2012, Page(s):500 - 506
Cited by:  Papers (19)
| | PDF (947 KB) | HTML

The internal electric field due to the piezoelectric effect in an InGaN/GaN multiple quantum-well structure is measured via photoluminescence (PL), electroreflectance (ER), and photocurrent (PC) spectroscopies, and the measurement results are compared with each other and with theoretically calculated values. The flat-band voltage is estimated by measuring the applied bias voltage that induces the ... View full abstract»

• ### On the Possibilities to Create a Negative Permittivity Metamaterial With Zero Imaginary Part of the Permittivity at a Specific Frequency—Electrical Network Theory Approach

Publication Year: 2012, Page(s):507 - 511
Cited by:  Papers (1)
| | PDF (400 KB) | HTML

A permittivity function suggested in the literature describing a material that exhibits negative permittivity and no loss at a specific frequency (and losses at other frequencies) is analyzed using electrical network theory. An equivalent circuit of the polarization admittance consisting of RLC components is derived. Further, a proof is given showing that if the admittance is lossless at a specifi... View full abstract»

• ### High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control

Publication Year: 2012, Page(s):512 - 515
Cited by:  Papers (16)
| | PDF (823 KB) | HTML

We investigate the interface control for very long wavelength infrared InAs/GaSb superlattice (SL) structures. An InAs/GaSb SL photodetector with very high structural quality has been demonstrated by precisely controlling the Sb-soak, the growth stop time and the InSb layer thickness at the interfaces. The full width at half maximum of the X-ray diffraction satellite peaks of a p-i-n device struct... View full abstract»

• ### Enhancement of Amplified Spontaneous Emission Contrast With a Novel Front-End Based on NOPA and SHG Processes

Publication Year: 2012, Page(s):516 - 520
Cited by:  Papers (10)
| | PDF (281 KB) | HTML

Employing a novel front-end based on femtosecond noncollinear optical-parametric amplification and second-harmonic generation processes in a Ti:sapphire chirped pulse amplification laser system, we first demonstrate the efficient enhancement of amplified spontaneous emission (ASE) contrast. Cleaned seed pulses of 100-μJ energy generated by the front-end are amplified to 0.75 J before compre... View full abstract»

• ### Theoretical Analysis of the Optical Feedback Noise Based on Multimode Model of Semiconductor Lasers

Publication Year: 2012, Page(s):521 - 527
Cited by:  Papers (5)
| | PDF (1129 KB) | HTML

An improved theoretical model to analyze the dynamics and operation of semiconductor lasers under optical feedback has been presented in this paper. A set of rate equations are formulated, in which the self and mutual gain saturation effects among lasing modes, reinjection of delayed feedback light reflected at the surface of the connecting optical device, and Langevin noise sources for the intens... View full abstract»

• ### Monte Carlo Simulation of InAlAs/InAlGaAs Tandem Avalanche Photodiodes

Publication Year: 2012, Page(s):528 - 532
Cited by:  Papers (16)
| | PDF (1112 KB) | HTML

Monte Carlo simulation is performed on a low-noise, three-stage tandem avalanche photodiode with InAlAs/InAlGaAs impact-ionization-engineered multiplication region. The simulated excess noise factor agrees well with experimental measurements. A modified structure to further reduce the excess noise is proposed. View full abstract»

• ### Tensile-Strained Ge/SiGeSn Quantum Wells for Polarization-Insensitive Electro-Absorption Waveguide Modulators

Publication Year: 2012, Page(s):533 - 541
Cited by:  Papers (7)
| | PDF (1156 KB) | HTML

We present design and modeling of a polarization-insensitive electro-absorption waveguide modulator operating at 1550 nm. Our design uses tensile-strained Ge-SixGeySn1-x-y quantum wells as the active material grown on a relaxed SiGeSn buffer on a silicon substrate, compatible with complementary metal-oxide semiconductor (CMOS) processes. Introducing tensile strain in the G... View full abstract»

• ### High-Speed Quantum Key Distribution System for 1-Mbps Real-Time Key Generation

Publication Year: 2012, Page(s):542 - 550
Cited by:  Papers (44)  |  Patents (1)
| | PDF (1691 KB) | HTML

A high-speed quantum key distribution (QKD) system has been developed with the goal of a 1-Mbps final secure key generation rate under 10-dB transmission loss, which corresponds to 50 km of standard single mode fiber. For the purpose of speeding-up all processes in QKD sequence, we apply a wavelength-division-multiplexing (WDM) technique using the colorless interferometric technique and a key dist... View full abstract»

• ### Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes

Publication Year: 2012, Page(s):551 - 556
Cited by:  Papers (12)
| | PDF (863 KB) | HTML

The internal quantum efficiency of GaN-based nanorod light emitting diode (LED) arrays is determined by the effects of reduced quantum confined Stark effect and sidewall-defect-related non-radiative recombination. Here we report the characterizations of light output of nanorod LED arrays with different rod etching depths. During the definition of nanorods, the effect of strain relaxation is accomp... View full abstract»

• ### IEEE Journal of Quantum Electronics information for authors

Publication Year: 2012, Page(s): C3
| PDF (27 KB)
• ### Blank page

Publication Year: 2012, Page(s): C4
| PDF (5 KB)

## Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong