IEEE Journal of Quantum Electronics

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• [Front cover]

Publication Year: 2011, Page(s): C1
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• IEEE Journal of Quantum Electronics publication information

Publication Year: 2011, Page(s): C2
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Publication Year: 2011, Page(s):1369 - 1370
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• Resonant Spectroscopy on Charge Tunable Quantum Dots in Photonic Crystal Structures

Publication Year: 2011, Page(s):1371 - 1374
Cited by:  Papers (12)
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We demonstrate resonant excitation of a semiconductor quantum dot embedded in a p-i-n diode structure in and out of a photonic crystal cavity. We investigate the modification of the spontaneous emission rate and the photon collection efficiency of quantum dots due to the presence of a photonic bandgap. The resonant excitation together with deterministic charging of the quantum... View full abstract»

• Theoretical and Numerical Investigations of Wavelength Bi/Multistability in Semiconductor Ring Lasers

Publication Year: 2011, Page(s):1375 - 1382
Cited by:  Papers (5)
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Wavelength bi/multistability in semiconductor ring lasers is studied both theoretically and numerically based on a multimode model with nonlinear effects arising from carrier density pulsation, carrier heating, spectral hole-burning, and four-wave mixing included. Wavelength bi/multistability is explained theoretically, and conditions required for wavelength bi/multi-stable operation are derived a... View full abstract»

• Single-Photon Multiparty Quantum Cryptographic Protocols With Collective Detection

Publication Year: 2011, Page(s):1383 - 1390
Cited by:  Papers (19)
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In order to reduce the requirements on quantum devices, Shih proposed two three-party quantum key distribution (QKD) protocols . However, Gao presented a simple and effective attack strategy (i.e., dense-coding attack) upon the two protocols . In this paper, we make a deep analysis on the reason why Shih three-party QKD protocols are not secure. Meanwhile, we improve the three-party QKD protocols ... View full abstract»

• AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

Publication Year: 2011, Page(s):1391 - 1395
Cited by:  Papers (12)
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The temperature dependence of dark current and avalanche gain were measured on AlAsSb p-i-n diodes with avalanche region widths of 80 and 230 nm. Measurements at temperatures ranging from 77 to 295 K showed that the dark current decreases rapidly with reducing temperature while avalanche gain exhibits a weak temperature dependence. No measurable band to band tunneling current was observed in the t... View full abstract»

• Fiber Optical Parametric Oscillator for Large Frequency-Shift Wavelength Conversion

Publication Year: 2011, Page(s):1396 - 1403
Cited by:  Papers (8)
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We investigate a fiber optical parametric oscillator (OPO) for sub-1-μm wavelength operation with threshold sufficiently low to allow for pumping by readily available all-fiber master-oscillator power-amplifier (MOPA) sources at 1.1 μm. The required low threshold is achieved in an all-fiber OPO ring-cavity which incorporates a photonic crystal fiber as gain medium, synchronously pump... View full abstract»

• Impact of Gain Saturation on Passive Mode Locking Regimes in Quantum Dot Lasers With Straight and Tapered Waveguides

Publication Year: 2011, Page(s):1404 - 1413
Cited by:  Papers (12)
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We report on the simulation of passive mode locking (ML) in quantum dot (QD) two-section lasers via a multi-section delayed differential equation model. The influence of the laser structural parameters on the achieved ML regimes is investigated. We show that, consistently with experimental findings, increasing the saturable absorber (SA) to gain section length ratio from 17% to 25%, a significant ... View full abstract»

• Far-Field Patterns of Plasmon Waveguide Interband Cascade Lasers

Publication Year: 2011, Page(s):1414 - 1419
Cited by:  Papers (2)
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The far-field patterns of InAs-based plasmon-waveguide interband cascade lasers are experimentally and theoretically investigated. It is shown that different ridge waveguide structures and metal contact configurations lead to distinctive far-field patterns. With the commonly adopted center metal contact on the top of the ridge waveguide, an undesirable double-lobe far-field pattern along the later... View full abstract»

• Calculation of Intraband Absorption Coefficients in Organic/Inorganic Nanocomposites: Effects of Colloidal Quantum Dot Surface Ligand and Dot Size

Publication Year: 2011, Page(s):1420 - 1427
Cited by:  Papers (8)
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Hybrid nanocomposite thin films composed of inorganic colloidal quantum dots (CQDs) embedded in an organic conjugated polymer have shown promise as a method for room-temperature infrared detection due to the 3-D confinement of the CQD. The CQDs are coated with a surface ligand material which is comprised of short, organic molecules that prevent the CQDs from aggregating when placed in solution. Th... View full abstract»

• Responsivity and Noise of Self-Mixing Photodetection Schemes

Publication Year: 2011, Page(s):1428 - 1433
Cited by:  Papers (26)  |  Patents (3)
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Responsivity and noise properties of the self-mixing (SM) detection process are analyzed. Starting with the photodiode and SM laser scheme as a detector of weak optical echoes from remote targets, we find equivalence to a coherent homodyne detection of the returning signal. In particular, in the VIS-NIR wavelength range, echoes can be detected down to about -90 dB of relative amplitude, typically.... View full abstract»

• Effect of Crystalline Quality on Photovoltaic Performance for ${rm In}_{0.17}{rm Ga}_{0.83}{rm As}$ Solar Cell Using X-Ray Reciprocal Space Mapping

Publication Year: 2011, Page(s):1434 - 1442
Cited by:  Papers (6)
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This paper presents the In0.17Ga0.83As solar cell grown on misoriented GaAs substrate (2°- and 15°-off) by metalorganic chemical vapor deposition. The crystalline quality of the In0.17Ga0.83As solar cell is determined by X-Ray reciprocal space mapping (RSM). RSM results show that the crystalline quality of In0.17Ga View full abstract»

• Gain Recovery Acceleration by Enhancing Differential Gain in Quantum Well Semiconductor Optical Amplifiers

Publication Year: 2011, Page(s):1443 - 1450
Cited by:  Papers (12)
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It is demonstrated theoretically that the quantum well (QW) semiconductor optical amplifiers (SOAs) with high differential gain will show fast gain recovery dynamic characteristics. Based on the calculation of energy band structure, the effects of compressive strain and p-type modulation doping on the gain, the differential gain, and linewidth enhancement factor (a-factor) are investigated. The pe... View full abstract»

• Interband Absorption Coefficients of the Electronic States Calculated for CdZnS Nanocrystals Grown by Sol-Gel Method

Publication Year: 2011, Page(s):1451 - 1457
Cited by:  Papers (8)
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CdxZn1-xS nanocrystals have been prepared by sol-gel method with different content of Cd, and their optical studies are characterized by taking transmittance spectra experimentally. We have theoretically calculated the eigen energy values of the confined electron in ground and excited states as a function of dot radius of the CdZnS quantum dot with various values of Cd... View full abstract»

• Phase-Coherent Heterodyne Detection in the Terahertz Regime With a Photomixer

Publication Year: 2011, Page(s):1458 - 1462
Cited by:  Papers (3)
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A low-temperature-grown GaAs photomixer with a spiral antenna has a quadratic response to the optical fields and an intrinsic nonlinear IV characteristic that allow the detection of THz radiation. A transmission line coupled to the antenna provides the photomixer with direct-current access in the microwave domain. The non-ohmic response of the photomixer is probed by rectification. The optical bea... View full abstract»

• High-Speed Modulation Analysis of Strongly Injection-Locked Semiconductor Ring Lasers

Publication Year: 2011, Page(s):1463 - 1471
Cited by:  Papers (5)  |  Patents (1)
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A novel scheme for modulation bandwidth enhancement is presented, involving distributed Bragg reflector master laser monolithically integrated with strongly injection-locked whistle-geometry microring laser. Enhanced high-speed performance of the novel scheme is confirmed through numerical modeling by comparing it with an earlier scheme, where optical injection was provided by a waveguide directio... View full abstract»

• Blank page

Publication Year: 2011, Page(s): 1472
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• IEEE Journal of Quantum Electronics information for authors

Publication Year: 2011, Page(s): C3
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Aims & Scope

The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Prof. Hon Ki Tsang
Chinese University of Hong Kong