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Nanotechnology, IEEE Transactions on

Issue 6 • Date Nov. 2010

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Displaying Results 1 - 22 of 22
  • Table of contents

    Publication Year: 2010 , Page(s): C1
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  • IEEE Transactions on Nanotechnology publication information

    Publication Year: 2010 , Page(s): C2
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  • Table of contents

    Publication Year: 2010 , Page(s): 661 - 662
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  • Editorial [introducion of new Associate Editor]

    Publication Year: 2010 , Page(s): 663
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  • Threshold Voltage Variations Make Full Adders Reliabilities Similar

    Publication Year: 2010 , Page(s): 664 - 667
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (287 KB) |  | HTML iconHTML  

    Addition is the most widely used arithmetic operation in digital applications. The reliability of full adder (FA) cells is crucial as they affect arithmetic logic and floating-point units, as well as cache/memory address calculations. This letter studies the reliability of five different FA designs. The analysis starts from the device level by estimating the effects threshold voltage variations will have on the reliability of scaled CMOS transistors. These estimations will then be used to calculate the reliability of the sum and carry_out signals. This letter will also briefly explore the effects of increasing the reliability of devices and of using gate-level redundancy schemes on the reliability of FAs. View full abstract»

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  • Experimental Demonstration of Fanout for Nanomagnetic Logic

    Publication Year: 2010 , Page(s): 668 - 670
    Cited by:  Papers (17)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (193 KB) |  | HTML iconHTML  

    Nanomagnet logic (NML) shows great promise as an alternative to conventional digital architectures. We present the first experimental demonstration of fanout using magnetizations of nanomagnets in the NML scheme. Specifically, we show magnetic force microscopy images of functioning fanout circuits. View full abstract»

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  • Probing Buried Defects in Extreme Ultraviolet Multilayer Blanks Using Ultrasound Holography

    Publication Year: 2010 , Page(s): 671 - 674
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (215 KB) |  | HTML iconHTML  

    Imaging high-resolution subsurface defects nondestructively in Mo-Si multilayer (ML) blanks used in extreme ultraviolet lithography is a challenge and no known metrology tools are available to identify such defects in a nondestructive way. The understanding of their growth mechanism during ML deposition necessitates the monitoring of these defects, which can then lead to fabricating defect-free ML blanks. Here, we report for the first time, a unique and novel application of scanning near-field ultrasound holography (SNFUH) in nondestructive imaging of high-resolution e-beam patterned lines and bumps buried under Mo/Si ML film stacks used for ultraviolet lithography. Our results indicate the successful identification of buried defects under ML blanks using SNFUH. View full abstract»

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  • Self-Adaptive Write Circuit for Low-Power and Variation-Tolerant Memristors

    Publication Year: 2010 , Page(s): 675 - 678
    Cited by:  Papers (10)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (242 KB) |  | HTML iconHTML  

    Memristive devices such as memristors that have been intensively studied for their possibilities as a strong candidate for future memories are known to have two problems. First, they need a large current in write operation, and second their process-V -temperature (PVT) variations are large compared with the conventional DRAM and FLASH memories. Moreover, the large writing current can be magnified with PVT variations. In this letter, a new write circuit is proposed to prevent unnecessary power loss by using a self-adjusting circuit for properly sizing the writing pulsewidth, thereby minimizing power consumption. The simulation results show that self-adjusting the pulsewidth can save power by 76% on average, compared to the conventional write circuit with a fixed pulsewidth. View full abstract»

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  • Linear Graphene Plasmons

    Publication Year: 2010 , Page(s): 679 - 681
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (69 KB) |  | HTML iconHTML  

    The coupling of the plasmon spectra of graphene and a nearby thick plasma is examined here in detail. The coupled modes include linear plasmons. View full abstract»

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  • An RF Circuit Model for Interdigital Capacitors-Based Carbon Nanotube Biosensors

    Publication Year: 2010 , Page(s): 682 - 686
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (337 KB) |  | HTML iconHTML  

    We present improved RF circuit modeling of a biosensing element based on a single-walled carbon nanotube combined interdigital capacitors at microwave frequencies. From the resultant circuit, the lumped element values for biomolecular binding are accurately obtained. It is thereby found that the completed RF circuit model shows excellent agreement with measured results. This implies that the electrical properties of a specific biomolecular binding system can be quantitatively analyzed if an optimal RF circuit model is constructed. Finally, we suggest that the suggested methodology can be used to analyze other biomolecular sensing methods. View full abstract»

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  • Functional Yield Estimation of Carbon Nanotube-Based Logic Gates in the Presence of Defects

    Publication Year: 2010 , Page(s): 687 - 700
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1484 KB) |  | HTML iconHTML  

    Carbon nanotube field-effect transistor (CNFET) is one of the most promising candidates for a building block of post silicon era integrated circuits. One of the major challenges faced by the CNFET is the presence of unwanted metallic tubes that adversely impacts the delay, power, and functional yield of carbon nanotube (CNT) based circuits. In this paper, we present tradeoff between these parameters with the help of Monte Carlo simulations for basic logic gates designed using four different configurations of CNFET including two stacking configurations that we originally proposed in 2008. We present newly developed analytical models to estimate the functional yield of logic gates designed using four different configurations of CNFET. The absolute difference in functional yield magnitudes between the Monte Carlo simulations and analytical models for different percentage of metallic tubes and different drive strength of logic gates is 0% to 0.9% for inverter and 0% to 2.5% for NAND/NOR gates. Results indicate that the proposed stacking configurations have the potential to increase the functional yield by as much as 2X for inverter and 10X for NAND gate. This increase in functional yield was observed for 10X lower static power and for 4.1X-4AX delay penalty under iso-input capacitance. View full abstract»

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  • Numerical Studies of Metal–Dielectric–Metal Nanoantennas

    Publication Year: 2010 , Page(s): 701 - 707
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (656 KB) |  | HTML iconHTML  

    We propose a new design of optical nanoantennas and present numerical studies of their optical properties. The nanoantennas are composed of two metallic parts stacked vertically with a dielectric spacer. The calculated near-field and far-field spectra show cavity resonances, which produce sharp peaks in local field spectra and leave their fingerprints as multiple dips in the far-field scattering spectra. Numerical results also show that the local field enhancements inside the cavity can be tuned by varying the size of the dielectric spacer and that a gap of 5 nm or less promises an extraordinary electromagnetic field enhancement on the order of 102. The uniqueness of this new design lies in the ability to fabricate them with high accuracy in gap size control. View full abstract»

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  • Efficient Solution of the Wigner–Poisson Equations for Modeling Resonant Tunneling Diodes

    Publication Year: 2010 , Page(s): 708 - 715
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1083 KB) |  | HTML iconHTML  

    A more efficient and accurate discretization of the Wigner-Poisson model for double barrier resonant tunneling diodes is presented. This new implementation uses nonuniform grids and higher order numerical methods to improve the accuracy of the solutions at a significantly lower computational cost. Using the new implementation, devices with short and long contact regions are analyzed as well as the effect of a correlation length parameter that defines the degree of nonlocality effects. The results show that devices with longer contact regions reduce numerical inconsistencies present when modeling shorter devices, and that longer correlation lengths generally improve the correspondence of the numerical solutions with those typically expected from experimental measurement. These new numerical simulation tools will enable researchers to successfully apply the Wigner-Poisson model to describe electron transport in nanoscale semiconductor tunneling devices. More specifically, the computationally more efficient numerical algorithms presented will be shown to allow for the quantum-based studies of resonant tunneling devices useful as sources and detectors at very high frequencies (e.g., THz regime). These types of devices are very important for use in sensors and sensing systems where very long wavelength characterization capabilities are important (e.g., interrogation of chemical and biological systems) as well as an array of other electronics applications. View full abstract»

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  • Traveling-Wave Metal/Insulator/Metal Diodes for Improved Infrared Bandwidth and Efficiency of Antenna-Coupled Rectifiers

    Publication Year: 2010 , Page(s): 716 - 722
    Cited by:  Papers (4)  |  Patents (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (531 KB) |  | HTML iconHTML  

    We evaluate a technique to improve the performance of antenna-coupled diode rectifiers working in the IR. Efficient operation of conventional, lumped-element rectifiers is limited to the low terahertz. By using femtosecond-fast MIM diodes in a traveling-wave (TW) configuration, we obtain a distributed rectifier with improved bandwidth. This design gives higher detection efficiency due to a good match between the antenna impedance and the geometry-controlled impedance of the TW structure. We have developed a method for calculating the responsivity of the antenna-coupled TW detector. Three TW devices, made from different materials, are simulated to obtain their impedance and responsivity at 1.5, 3, 5, and 10 μm wavelengths. The characteristic impedance of a 100-nm-wide TW is in the range of 50 Ω and has a small variation with frequency. A peak responsivity of 0.086 A/W is obtained for the Nb-Nb2 O5 -Nb TW diode at 3-μm wavelength. This corresponds to a quantum efficiency of 3.6% and is a significant improvement over the antenna-coupled lumped-element diode rectifiers. For IR imaging, this results in a normalized detectivity of 4 × 106 Jones at 3 μm. We have identified several ways for improving the detectivity of the TW detector. Possible methods include decreasing the diode resistance, reducing the noise, and increasing the effective antenna area. View full abstract»

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  • A Study of Geometry Effects on the Performance of Ballistic Deflection Transistor

    Publication Year: 2010 , Page(s): 723 - 733
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (910 KB) |  | HTML iconHTML  

    We present the results of an experimental study of dimensional ratios dependencies on the performance of a ballistic deflection transistor (BDT) operating in a quasi-ballistic regime. Experimental transconductance change based on geometry variations is studied for smaller and larger devices with channel width of 300 and 500 nm, respectively. Transconductance variation for a series of drain biases is also observed for a specific geometry and dimension. By means of Monte Carlo modeling we report the effect of different geometry parameters on the transfer characteristics of BDTs. The strength of the gate control in the InGaAs channel is analyzed. View full abstract»

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  • Integration of Carbon Nanotubes to C-MEMS for On-chip Supercapacitors

    Publication Year: 2010 , Page(s): 734 - 740
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (773 KB) |  | HTML iconHTML  

    Carbon nanotubes (CNTs)/carbon microelectromechanical systems (C-MEMS) composites were fabricated as electrode materials for on-chip supercapacitors. By using photolithography and pyrolysis process, 3-D C-MEMS architectures were prepared. The iron catalyst particles were conformally coated on the C-MEMS by electrostatic spray deposition (ESD) and CNTs were synthesized on the surfaces of C-MEMS by catalytic CVD method. The CNT/C-MEMS composites exhibited higher specific capacitance than C-MEMS. Furthermore, the composites with more homogeneous CNTs showed better capacitance. After treatment of oxygen plasma, the specific capacitance of the composite increased due to the contribution of oxygen functional groups. View full abstract»

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  • Determining the Electronic Properties of Individual Nanointerfaces by Combining Intermittent AFM Imaging and Contact Spectroscopy

    Publication Year: 2010 , Page(s): 741 - 744
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (240 KB) |  | HTML iconHTML  

    A method to determine the electronic properties at nanointerfaces or of nanostructures by utilizing intermittent contact atomic force microscopy and contact spectroscopy in one system is developed. By combining these two methods, the integrity of the interface or structure is maintained during imaging, while the extraction of the electronic information is obtained with contact spectroscopy. This method is especially vital for understanding interfaces between metal nanoparticles and substrates, where the nanoparticles are not tethered to the surface and can be combined with new and evolving techniques of thermal drift compensation to allow for a larger range of experiments on nanointerfaces and nanostructures in ambient environments. An experimental probe for quantifying the properties of individual interfaces with diameters in the range of 20 to 100 nm is developed, which is based on scanning probe microscopy. View full abstract»

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  • Scanning Thermal Microscopy for Fast Multiscale Imaging and Manipulation

    Publication Year: 2010 , Page(s): 745 - 753
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (747 KB) |  | HTML iconHTML  

    Multiscale resolution imaging and manipulation are essential for applications ranging from defect screening in circuits to nanoscale manipulation, patterning, and lithography. In this paper, we introduce a variant of scanning thermal microscopy to image surfaces at both the micro- and nanoscale. Electrothermal imaging at the microscale is performed in a completely out-of-contact, i.e., “noncontact” or “off-contact,” mode with a microscale heater, followed by higher resolution nanoscale imaging in contact mode with a nanoscale probe tip. Using this methodology, the imaging and manipulation functions of a single probe can be decoupled completely. This off-contact imaging mode is useful for avoiding tip wear and can be performed safely at high velocities. We demonstrate imaging of microscale features at speeds of up to 2 mm/s. The lateral resolution is determined by the dimensions of the heater used for imaging. For the flying heights and heater dimensions used here, the 1-σ lateral spatial resolution limit in the off-contact mode is less than 10 μm for 10-nm-tall features. A silicon nanowire attached to microscale electrodes is imaged to demonstrate the efficacy of this scheme. View full abstract»

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  • Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors

    Publication Year: 2010 , Page(s): 754 - 758
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (682 KB) |  | HTML iconHTML  

    We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (s) down to 4.2 K. From the -dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the -dependence of the scattering coefficient-mobility product extracted from the relative fluctuation amplitude of the drain current are consistent with the fact that the surface roughness scattering is dominant in GAA PMOS SNWFETs. View full abstract»

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  • 2010 Index IEEE Transactions on Nanotechnology Vol. 9

    Publication Year: 2010 , Page(s): 759 - 780
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  • IEEE Transactions on Nanotechnology information for authors

    Publication Year: 2010 , Page(s): C3
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  • Blank page [back cover]

    Publication Year: 2010 , Page(s): C4
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Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.