# IEEE Transactions on Electron Devices

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Displaying Results 1 - 25 of 68
• ### [Front cover]

Publication Year: 2007, Page(s): C1
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2007, Page(s): C2
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Publication Year: 2007, Page(s):2069 - 2071
| PDF (62 KB)
• ### Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices

Publication Year: 2007, Page(s):2072 - 2078
Cited by:  Papers (1)
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• ### Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

Publication Year: 2007, Page(s):2079 - 2089
Cited by:  Papers (145)
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Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of the underlying material are important. Approaches based on a continuum representation of the underlying... View full abstract»

• ### Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

Publication Year: 2007, Page(s):2090 - 2099
Cited by:  Papers (78)
| | PDF (1209 KB) | HTML

In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures consisting of more than 64 and 52 million atoms, corresponding to volumes of (1... View full abstract»

• ### Multidimensional Modeling of Nanotransistors

Publication Year: 2007, Page(s):2100 - 2115
Cited by:  Papers (26)
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In this paper, we review our recent work using the nonequilibrium Green's function method to model nanotransistors. After presenting a motivation for the need of quantum mechanical modeling, an account of the equations and implementation is given for both 1-D and 2-D modeling. Examples are given to highlight the use of the developed models. Finally, possible future directions in quantum mechanical... View full abstract»

• ### Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length

Publication Year: 2007, Page(s):2116 - 2136
Cited by:  Papers (86)
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We discuss selected aspects of the physics of electronic transport in nMOSFETs at the 10-nm scale: Long-range Coulomb interactions, which may degrade performance and even prevent ballistic transport from occurring; scattering with high-k insulator interfacial modes, which depresses the electron mobility but is found to affect minimally the saturated transconductance of 15-nm devices; and the use o... View full abstract»

• ### nextnano: General Purpose 3-D Simulations

Publication Year: 2007, Page(s):2137 - 2142
Cited by:  Papers (274)
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nextnano is a semiconductor nanodevice simulation tool that has been developed for predicting and understanding a wide range of electronic and optical properties of semiconductor nanostructures. The underlying idea is to provide a robust and generic framework for modeling device applications in the field of nanosized semiconductor heterostructures. The simulator deals with realistic geometries and... View full abstract»

• ### Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

Publication Year: 2007, Page(s):2143 - 2154
Cited by:  Papers (166)
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Recent advances in experimental techniques (on-the- fly and ultrafast techniques) allow measurement of threshold voltage degradation due to negative-bias temperature instability (NBTI) over many decades in timescale. Such measurements over wider temperature range (-25degC to 145degC), film thicknesses (1.2-2.2 nm of effective oxide thickness), and processing conditions (variation of nitrogen withi... View full abstract»

• ### Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

Publication Year: 2007, Page(s):2155 - 2163
Cited by:  Papers (7)
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In this paper, accurate and advanced CMOS process and device simulations based on atomistic kinetic Monte Carlo (kMC) process simulator are presented. First, the methodology used to predict continuum 2-D/3-D doping profiles from 3-D atomistic distribution that can be directly transferred from process to device simulator is described. Calibration of damage evolution, dopant diffusion and clustering... View full abstract»

• ### A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

Publication Year: 2007, Page(s):2164 - 2173
Cited by:  Papers (36)
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This paper presents a new semianalytical model for the energy dispersion of the holes in the inversion layer of pMOS transistors. The wave vector dependence of the energy inside the 2-D subbands is described with an analytical, nonparabolic, and anisotropic expression. The procedure to extract the parameters of the model is transparent and simple, and we have used the band structure obtained with ... View full abstract»

• ### Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator

Publication Year: 2007, Page(s):2174 - 2182
Cited by:  Papers (51)  |  Patents (1)
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The hole inversion-layer mobility of strained-SiGe homo- and heterostructure-on-insulator in ultrathin-body MOSFETs is modeled by a microscopic approach. The subband structure of the quasi-2-D hole gas is calculated by solving the 6times6koarrldrpoarr Schrodinger equation self-consistently with the electrostatic potential. The model includes four important scattering mechanisms: optical phonon sca... View full abstract»

• ### The Effect of General Strain on the Band Structure and Electron Mobility of Silicon

Publication Year: 2007, Page(s):2183 - 2190
Cited by:  Papers (116)
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A model capturing the effect of general strain on the electron effective masses and band-edge energies of the lowest conduction band of silicon is developed. Analytical expressions for the effective mass change induced by shear strain and valley shifts/splittings are derived using a degenerate kldrp theory at the zone-boundary X point. Good agreement to numerical band- structure calculations using... View full abstract»

• ### Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs

Publication Year: 2007, Page(s):2191 - 2203
Cited by:  Papers (97)  |  Patents (1)
| | PDF (340 KB) | HTML

A rigorous surface-roughness scattering model for ultrathin-body silicon-on-insulator (SOI) MOSFETs is derived, which reduces to Ando's model in the limit of bulk MOSFETs. The matrix element of the scattering potential reflects the fluctuations of both the wavefunction and the potential energy. The matrix element reflecting the fluctuation of the wavefunction is expressed in an integral form which... View full abstract»

• ### Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

Publication Year: 2007, Page(s):2204 - 2212
Cited by:  Papers (41)
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A number of experiments have recently appeared in the literature that extensively investigate the silicon-thickness dependence of the low-field carrier mobility in ultrathin-body silicon-on-insulator (SOI) MOSFETs. The aim of this paper is to develop a compact model, suited for implementation in device- simulation tools, which accurately predicts the low-field mobility in SOI single- and double-ga... View full abstract»

• ### A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

Publication Year: 2007, Page(s):2213 - 2222
Cited by:  Papers (108)
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In this paper, we present a full 3-D real-space quantum-transport simulator based on the Green's function formalism developed to study nonperturbative effects in ballistic nanotransistors. The nonequilibrium Green function (NEGF) equations in the effective mass approximation are discretized using the control-volume approach and solved self-consistently with the Poisson equation in order to obtain ... View full abstract»

• ### Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study

Publication Year: 2007, Page(s):2223 - 2231
Cited by:  Papers (105)  |  Patents (7)
| | PDF (1090 KB) | HTML

The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by self-consistently solving the nonequilibrium Green's function transport equation in an atomistic basis set with a 3-D Poisson equation. The armchair edge GNR channel shares similarities with a zigzag carbon nanotube; however, it has a different geometry and quantum confinement bound... View full abstract»

• ### On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Publication Year: 2007, Page(s):2232 - 2242
Cited by:  Papers (57)
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In this paper, we report on the possibility of using particle-based Monte Carlo (MC) techniques to incorporate all relevant quantum effects in the simulation of semiconductor nanotransistors. Starting from the conventional MC approach within the semiclassical Boltzmann approximation, we develop a multisubband description of transport to include quantization in ultrathin-body devices. This techniqu... View full abstract»

• ### Band-Structure Effects in Ultrascaled Silicon Nanowires

Publication Year: 2007, Page(s):2243 - 2254
Cited by:  Papers (63)
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In this paper, we investigate band-structure effects on the transport properties of ultrascaled silicon nanowire FETs operating under quantum-ballistic conditions. More specifically, we expand the dispersion relationship epsiv(kappa) in a power series up to the third order in kappa<sup>2</sup> and generate the corresponding higher order operator to be used within the single-electron Ha... View full abstract»

• ### Scaling Limits of Double-Gate and Surround-Gate Z-RAM Cells

Publication Year: 2007, Page(s):2255 - 2262
Cited by:  Papers (23)  |  Patents (94)
| | PDF (527 KB) | HTML

We consider the scaling of the capacitorless single-transistor [zero-capacitor RAM (Z-RAM)] dynamic RAM (DRAM) cells having surround-gate and double-gate structures. We find that the scaling is limited to the channel length of approximately 25 nm for both types of cells, which is somewhat more pessimistic than previously believed. The mechanisms that are found to be of most importance in imposing ... View full abstract»

• ### Low-Power High-Performance Asymmetrical Double-Gate Circuits Using Back-Gate-Controlled Wide-Tunable-Range Diode Voltage

Publication Year: 2007, Page(s):2263 - 2268
Cited by:  Papers (1)
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This paper presents a new power-reduction scheme using a back-gate-controlled asymmetrical double-gate device with robust data-retention capability for high-performance logic/SRAM power gating or variable/dynamic supply applications. The scheme reduces the transistor count, area, and capacitance in the header/footer device and provides a wide range of virtual ground (GND) or supply voltage. Physic... View full abstract»

• ### Extraction of Substrate Resistance in Multifinger Bulk FinFETs Using Shorted Source/Drain Configuration

Publication Year: 2007, Page(s):2269 - 2275
Cited by:  Papers (4)
| | PDF (1211 KB) | HTML

The substrate resistances of highly scaled bulk FinFETs were extracted by using a new RF equivalent circuit, and this approach was verified by a 3-D device simulator. Small signal model parameters of bulk FinFETs were extracted through proposed equivalent circuit and Y-parameter analysis. Unlike the conventional method, the proposed method showed frequency-independent substrate resistances in high... View full abstract»

• ### Empirically Verified Thermodynamic Model of Gate Capacitance and Threshold Voltage of Nanoelectronic MOS Devices With Applications to$\hbox{HfO}_{2}$and$\hbox{ZrO}_{2}$Gate Insulators

Publication Year: 2007, Page(s):2276 - 2282
Cited by:  Papers (5)
| | PDF (1045 KB) | HTML

A thermodynamic variational model derived by minimizing the Helmholtz free energy of the MOS device is presented. The model incorporates an anisotropic permittivity tensor and accommodates a correction for quantum-mechanical charge confinement at the dielectric/substrate interface. The energy associated with the fringe field that is adjacent to the oxide is of critical importance in the behavior o... View full abstract»

• ### Small-Signal Analysis of Decananometer Bulk and SOI MOSFETs for Analog/Mixed-Signal and RF Applications Using the Time-Dependent Monte Carlo Approach

Publication Year: 2007, Page(s):2283 - 2292
Cited by:  Papers (7)
| | PDF (304 KB) | HTML

A state-of-the-art Monte Carlo simulator is applied to the investigation of the radio-frequency performance of bulk and ultrathin-body single-gate SOI MOSFETs that are designed according to the prescriptions of the 2005 ITRS for analog and mixed-signal applications. We provide an analysis of the signal-delay buildup along the channel and an investigation of the scaling properties of the parameters... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy