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Nanotechnology, IEEE Transactions on

Issue 6 • Date Nov. 2005

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Displaying Results 1 - 18 of 18
  • Table of contents

    Publication Year: 2005 , Page(s): c1
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  • IEEE Transactions on Nanotechnology publication information

    Publication Year: 2005 , Page(s): c2
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  • Vertical single-crystal ZnO nanowires grown on ZnO:Ga/glass templates

    Publication Year: 2005 , Page(s): 649 - 654
    Cited by:  Papers (30)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1744 KB) |  | HTML iconHTML  

    Vertical single-crystal ZnO nanowires with uniform diameter and uniform length were selectively grown on ZnO:Ga/glass templates at 600°C by a self-catalyzed vapor-liquid-solid process without any metal catalyst. It was found that the ZnO nanowires are grown preferred oriented in the [002] direction with a small X-ray diffraction full-width half-maximum. Photoluminescence, field-emission scanning electron microscopy, and high-resolution transmission electron microscopy measurements also confirmed good crystal quality of our ZnO nanowires. Field emitters using these ZnO nanowires were also fabricated. It was found that threshold field of the fabricated field emitters was 14 V/μm. With an applied electric field of 24 V/μm, it was found that the emission current density was around 0.1 mA/cm2. View full abstract»

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  • Static buckling and actuation of free-standing mesoscale beams

    Publication Year: 2005 , Page(s): 655 - 659
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (632 KB) |  | HTML iconHTML  

    We discuss the static buckling and actuation of free-standing mesoscopic beams. As the length-to-width aspect ratio of the beams is increased, the buckled shapes become more complex. Mechanical actuation confirms that the complex shapes are stable equilibria and that metastable equilibria also exist. This is consistent with a nonlinear elastic continuum model, which incorporates asymmetry in higher order buckling modes. Preliminary results indicate that, in addition to purely mechanical actuation, electromechanical mode-mode transitions can be induced by utilizing fabricated electrodes. View full abstract»

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  • UV photodetectors with thin-film Si nanoparticle active medium

    Publication Year: 2005 , Page(s): 660 - 668
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1552 KB) |  | HTML iconHTML  

    We constructed ultraviolet (UV) photodetectors using thin films of silicon nanoparticles as active media. The Si nanoparticle films are electrodeposited at room temperature on Si p-type substrates. Uniform silicon nanoparticles of 1-nm diameter are dispersed from Si wafers using electrochemical etching. The nanoparticles are ultrabright under UV excitation, with nanosecond luminescence time characteristics. Current-voltage (I--V) characteristics indicate a photoconductor in series with a diode-like junction with a large enhancement in the forward current under UV illumination. Our results point to a sensitive UV detector with good visible blindness where the particle films effectively constitutes a wide-bandgap material. View full abstract»

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  • On single-electron technology full adders

    Publication Year: 2005 , Page(s): 669 - 680
    Cited by:  Papers (16)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1088 KB) |  | HTML iconHTML  

    This paper reviews several full adder (FA) designs in single-electron technology (SET). In addition to the structure and size (i.e., number of devices), this paper tries to provide a quantitative and qualitative comparison in terms of delay, sensitivity to (process) variations, and complexity of the design. This will allow for a better understanding of the advantages and disadvantages of each solution. An optimization of an SET FA (combining one of the SET FAs with a static buffer), together with a new SET FA design (based on capacitive SET threshold logic gates), will also be described and compared with the other SET FAs. View full abstract»

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  • Deterministic addressing of nanoscale devices assembled at sublithographic pitches

    Publication Year: 2005 , Page(s): 681 - 687
    Cited by:  Papers (11)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (384 KB) |  | HTML iconHTML  

    Multiple techniques have now been proposed using random addressing to build demultiplexers which interface between the large pitch of lithographically patterned features and the smaller pitch of self-assembled sublithographic nanowires. At the same time, the relatively high defect rates expected for molecular-sized devices and wires dictate that we design architectures with spare components so we can map around defective elements. To accommodate and mask both of these effects, we introduce a programmable addressing scheme which can be used to provide deterministic addresses for decoders built with random nanoscale addressing and potentially defective wires. We describe how this programmable addressing scheme can be implemented with emerging, nanoscale building blocks and show how to build deterministically addressable memory banks. We characterize the area required for this programmable addressing scheme. For 2048×2048 memory banks, the area overhead for address correction is less than 33%, delivering net memory densities around 1011 b/cm2. View full abstract»

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  • Bloch's oscillations in quantum circuits with charge discreteness

    Publication Year: 2005 , Page(s): 688 - 689
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (184 KB) |  | HTML iconHTML  

    We consider the effect of charge discreteness in a quantum circuit with inductance L. The inductance is pierced by a time-depending external magnetic field, which creates a time-dependent magnetic flux φext(t). When the external magnetic flux varies linearly with time, the induced current in the inductance oscillates with a frequency proportional to the flux variation and charge discreteness. This phenomenon is equivalent to well-known Bloch's oscillation in crystal or periodic superlattices heterostructures. In fact, formally, the charge discreteness plays the role of a lattice constant. The same phenomenon occurs when the flux variations are replaced by a (constant) electromotive force. We expect this phenomena to be realized in micrometer sized solid-state systems. View full abstract»

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  • A line-based parallel memory for QCA implementation

    Publication Year: 2005 , Page(s): 690 - 698
    Cited by:  Papers (24)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (752 KB) |  | HTML iconHTML  

    Quantum-dot cellular automata (QCA) has been widely advocated as a new device architecture for nanotechnology. Using QCA, the innovative design of digital systems can be achieved by exploiting the so-called capability of processing-in-wire, i.e., signal manipulation proceeds at the same time as propagation. QCA systems require low power together with the potential for high density and regularity. These features make QCA an attractive technology for manufacturing memories in which the in-wire paradigm can be exploited for storage purposes. This paper proposes a novel parallel memory architecture for QCA implementation. This architecture is based on storing information on a QCA line by changing the direction of signal flow among three clocking zones. Timing of these zones requires two additional clocks to implement a four-step process for reading/writing data to the memory. Its operation has been verified by simulation. It is shown that the requirements for clocking, number of zones, as well as the underlying CMOS circuitry are significantly reduced compared with previous QCA parallel architectures. View full abstract»

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  • Method for predicting fT for carbon nanotube FETs

    Publication Year: 2005 , Page(s): 699 - 704
    Cited by:  Papers (32)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (472 KB) |  | HTML iconHTML  

    A method based on a generic small-signal equivalent circuit for field-effect transistors is proposed for predicting the unity-current-gain frequency fT for carbon-nanotube devices. The key to the useful implementation of the method is the rigorous estimation of the values for the components of the equivalent circuit. This is achieved by numerical differentiation of the charges and currents resulting from self-consistent solutions to the equations of Schrodinger and Poisson. Sample results are presented, which show that fT can have a very unusual dependence on the gate-source bias voltage. This behavior is due mainly to the voltage dependence of the transconductance and capacitance in the presence of quasi-bound states in the nanotube. View full abstract»

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  • Realization of multiple valued logic and memory by hybrid SETMOS architecture

    Publication Year: 2005 , Page(s): 705 - 714
    Cited by:  Papers (26)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (728 KB) |  | HTML iconHTML  

    A novel complimentary metal-oxide-semiconductor (CMOS) single-electron transistor (SET) hybrid architecture, named SETMOS, is proposed, which offers Coulomb blockade oscillations and quasi-periodic negative differential resistance effects at much higher current level than the traditional SETs. The Coulomb blockade oscillation characteristics are exploited to realize the multiple valued (MV) literal gate and the periodic negative differential resistance behavior is utilized to implement capacitor-less multiple valued static random access memory (MV SRAM) cell. The SETMOS literal gate is then used to build up other MV logic building blocks, e.g., transmission gate, binary to MV logic encoder, and MV to binary logic decoder. Analytical SET model simulations are employed to verify the functionalities of the proposed MV logic and memory cells for quaternary logic systems. SETMOS MV architectures are found to be much faster and less temperature-sensitive than previously reported hybrid CMOS-SET based MV circuits. View full abstract»

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  • Assessment of high-frequency performance potential of carbon nanotube transistors

    Publication Year: 2005 , Page(s): 715 - 721
    Cited by:  Papers (73)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (496 KB) |  | HTML iconHTML  

    Self-consistent quantum simulations are used to explore the high-frequency performance potential of carbon nantube field-effect transistors (CNTFETs). The cutoff frequency expected for a recently reported CNT Schottky-barrier FET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel reduces parasitic capacitance per tube. Increasing tube density gives a large improvement of high-frequency performance when tubes are widely spaced and parasitic capacitance dominates but only a small improvement when the tube spacing is small and intrinsic gate capacitance dominates. Alternatively, using quasi-one-dimensional nanowires as source and drain contacts should significantly reduce parasitic capacitance and improve high-frequency performance. Ballistic CNTFETs should outperform ballistic Si MOSFETs in terms of the high-frequency performance limit because of their larger band-structure-limited velocity. View full abstract»

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  • Analog-digital and digital-analog converters using single-electron and MOS transistors

    Publication Year: 2005 , Page(s): 722 - 729
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (368 KB) |  | HTML iconHTML  

    This paper proposes two kinds of novel single-electron analog-digital conversion (ADC) and digital-analog conversion (DAC) circuits that consist of single-electron transistors (SETs) and metal-oxide-semiconductor (MOS) transistors. The SET/MOS hybrid ADC and DAC circuits possess the merits of the SET circuit and the MOS circuit. We obtain the SPICE macro-modeling code of the SET transistor by studying and fitting the characteristics of the SET with SPICE simulation and Monte Carlo simulation methods. The SPICE macro-modeling code is used for the simulation of the SET/MOS hybrid ADC and DAC circuits. We simulate the performances of the SET/MOS hybrid 3-b ADC and 2-b DAC circuits by using the H-SPICE simulator. The simulation results demonstrate that the hybrid circuits can perform analog-digital and digital-analog data conversion well at room temperature. The hybrid ADC and DAC circuits have advantages as follows: 1) compared with conventional circuits, the architectures of the circuits are simpler; 2) compared with single electron transistor circuits, the circuits have much larger load capability; 3) the power dissipation of the circuits are lower than ωW; 4) the data conversion rate of the circuits can exceed 100 MHz; and 5) the resolution of the ADC and DAC circuits can be increased by the pipeline architectures. View full abstract»

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  • Numerical investigation on the filtering behavior of 2-D PBGs with multiple periodic defects

    Publication Year: 2005 , Page(s): 730 - 739
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (688 KB) |  | HTML iconHTML  

    In this study, the transmission properties of photonic crystals with multiple periodic defects are studied by using a full-wave approach. The high convergence rate of the employed technique has allowed us to accurately and efficiently predict the filtering behavior of the considered structures. Results are presented for both TE and TM polarizations, showing the transmission efficiencies as a function of the involved parameters. In order to give more physical insight, a comparison with a simpler one-dimensional model has been provided. From our numerical investigation, it turns out that, by suitably configuring the photonic bandgap, it is possible to shape the filtering properties in TE polarization in a simple and versatile way. View full abstract»

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  • On the evaluation of scaling of QCA devices in the presence of defects at manufacturing

    Publication Year: 2005 , Page(s): 740 - 743
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (384 KB) |  | HTML iconHTML  

    In this paper, we evaluate scaling of quantum-dot cellular automata (QCA) devices (majority voter and inverter) in the presence of defects due to process variations in QCA manufacturing. Simulation results using the two engines of QCADesigner are provided and compared to show the defect tolerance of these devices. View full abstract»

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  • 2005 Index

    Publication Year: 2005 , Page(s): 744 - 756
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  • IEEE Transactions on Nanotechnology Information for authors

    Publication Year: 2005 , Page(s): c3
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  • Blank page [back cover]

    Publication Year: 2005 , Page(s): c4
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Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.