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Circuits and Devices Magazine, IEEE

Issue 5 • Date Sept.-Oct. 2004

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Displaying Results 1 - 25 of 25
  • Advertisers Index

    Publication Year: 2004 , Page(s): 48
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  • News society

    Publication Year: 2004 , Page(s): 38
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  • Modern Component Families and Circuit Block Design [Book Review]

    Publication Year: 2004 , Page(s): 36 - 37
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    Freely Available from IEEE
  • Spotlight on memory: an optically biased, single-ended, three transistor, fully static RAM cell

    Publication Year: 2004 , Page(s): 18 - 24
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2734 KB) |  | HTML iconHTML  

    A single-ended static memory scheme combining advantages of both a one-transistor dynamic RAM (DRAM) cell and a six-transistor static RAM (SRAM) cell is proposed in this article. For the first time, optical bias is introduced, converting the classical complementary metal-oxide semiconductor (CMOS) RAM to an optoelectronic device. The cell structure is highly scalable and cost effective. Various approaches and schemes were applied to combine advantages of static and dynamic RAM memories, striving to shorten access times, lower power dissipation, and decrease cell area. This is particularly true for system-on-a-chip (SoC) and embedded memories. Here, the novel approach towards the same goal is proposed and simulated, introducing standard CMOS technology. A single-ended, three-transistor, fully static RAM cell is demonstrated. View full abstract»

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  • The Trunked Radio and Enhanced PMR Radio Handbook [Book Review]

    Publication Year: 2004 , Page(s): 36
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  • 2005 IEEE Membership Application

    Publication Year: 2004 , Page(s): 45 - 46
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  • An Interactive Multimedia Introduction to Signal Processing [Book Review]

    Publication Year: 2004 , Page(s): 35
    Cited by:  Papers (2)
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  • Substrate Noise Coupling in Mixed-Signal ASICS [Book Review]

    Publication Year: 2004 , Page(s): 37
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  • High-Speed Clock Network Design

    Publication Year: 2004 , Page(s): 36
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  • Lossless Compression Handbook [Book Review]

    Publication Year: 2004 , Page(s): 35 - 36
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  • CMOS PLL calibration techniques

    Publication Year: 2004 , Page(s): 6 - 11
    Cited by:  Papers (23)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (494 KB) |  | HTML iconHTML  

    The article discusses auto calibration of phase lock loops (PLLs), particularly when used as frequency synthesizers in fully integrated radios targeting future generations of broadband wireless applications. These PLLs use wideband voltage-controlled oscillators (VCOs) covering a wide tuning range. A calibration technique is discussed and used in a wireless LAN radio. View full abstract»

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  • VLSI - Designer's interface

    Publication Year: 2004 , Page(s): 4 - 5
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  • FEM versus BEM

    Publication Year: 2004 , Page(s): 25 - 34
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1015 KB) |  | HTML iconHTML  

    For the performance of electron devices, an accurate electrostatic analysis is essential, and the boundary element method (BEM) has become a better method than the domain-type finite element method (FEM) because BEM can provide a complete solution in terms of boundary values only with substantial savings in modeling effort for the variable design stage. But, for exterior problems with singularity arising from the degenerate boundary (e.g., the edge of parallel-plate capacitor), the dual BEM becomes one of the most efficacious and robust tools for simulating the fringing field near the edge of electron devices because no laborious artificial boundary technique was needed like conventional BEM. After the fringing field is known well, the charge and capacitance of electron devices can be accurately calculated, and we can also understand the minimum allowable data of dielectric strength for keeping off dielectric breakdown. Electrostatics, as used here, involves charges in motion as well as at rest. Generally, there are five fundamental quantities (voltage, charge, current, capacitance, and resistance) in electrostatics that are involved in almost all applications. For most electrical engineers, voltage, or electromotive force (EMF) is the most important one. Electrostatic problems generally play a very important role in improving the performance and reliability of electron devices in the design stage (Cheng, 1989). Although we all understand that the beginning of electrostatic theory is believed to have occurred several centuries before, the first meaningful application, the commercially electrostatic precipitator, was just installed by Cottrell in 1907. Besides two major present technologies from 1907 to now, electrostatic precipitation and electrostatic coating, Castle also suggested that there would be several new industrial applications to come from developments in the fields of micro electromechanical systems (MEMS), biotechnology, ultrafine particles, nanotechnology, and space for the future applications of electrostatics. Because electrostatics still affects the performance of MEMS and electron devices critically nowadays, how to accurately obtain the electric potential V and electric field intensity E becomes especially important for engineers. We all kn- ow that scientists and engineers usually use several techniques in solving continuum or field problems. Loosely speaking, these techniques can be classified as experimental, theoretical (or analytical), or numerical. View full abstract»

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  • IEEE Circuits & Devices

    Publication Year: 2004 , Page(s): 0_1
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  • IEEE Circuits & Devices Magazine

    Publication Year: 2004 , Page(s): 0_2
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  • IEEE Circuits & Devices - Table of contents

    Publication Year: 2004 , Page(s): 1
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  • From the Editor - Why is IEEE Circuits & Devices magazine important?

    Publication Year: 2004 , Page(s): 2
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  • Information for authors

    Publication Year: 2004 , Page(s): 3
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  • ROMHD and ROMLD

    Publication Year: 2004 , Page(s): 12 - 17
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1651 KB) |  | HTML iconHTML  

    An embedded read-only memory architecture with a complementary cell and two interchangeable power/performance design points is described. This article focuses on the novel features of 0.13-μm embedded, compilable read-only memory (ROM). A complementary array cell that increases and maintains signal margins across array sizes despite the ever-increasing capacitive coupling effects and lower voltages of each succeeding technology generation is described here along with a new architecture that allows a customer to switch between two different power/performance design points while only changing the metal wiring in the ROM via a compiler. Hardware data is presented that illustrates the success of the array design and the difference between the two power/performance design points. View full abstract»

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  • Conference spotlight - International electron devices meeting celebrates 50 years

    Publication Year: 2004 , Page(s): 39 - 41
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  • Conference calendar

    Publication Year: 2004 , Page(s): 42 - 43
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  • Tomorrow starts with what's new today

    Publication Year: 2004 , Page(s): 44
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  • IEEE Computer Society Library Subscription Plan-Electronic

    Publication Year: 2004 , Page(s): 47
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  • Brain teaser challenge

    Publication Year: 2004 , Page(s): 49
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  • IEEE Xplore Digital Library [advertisement]

    Publication Year: 2004 , Page(s): 50
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Aims & Scope

IEEE Circuits and Devices Magazine (1985-2006) covers the design, implementation, packaging, and manufacture of micro-electronic and photonic devices, circuits and systems

 

This Magazine ceased publication in 2006.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Dr. Ronald W. Waynant
r.waynant@ieee.org