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Volume 26 Issue 7 • July 1989

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Displaying Results 1 - 6 of 6
  • Preparing for the new volt and ohm

    Publication Year: 1989, Page(s):20 - 23
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (543 KB)

    New representations of the volt and ohm, which are to go into effect on Jan. 1, 1990, are discussed. Based on the Josephson and quantum Hall effects, these new representations will change the values of present-day volt and ohm representations and, by derivation, those of the ampere and watt. The new standards will eliminate the differences that currently exist among the volt and ohm representation... View full abstract»

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  • The Gunn effect

    Publication Year: 1989
    Cited by:  Papers (2)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (100 KB)

    The research that led up to the discovery of the Gunn effect is described by the author. A brief explanation of the effect is given, and the present use of Gunn diodes is also indicated.<<ETX>> View full abstract»

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  • The dual origins of a bipolar breakthrough (I/sup 2/L)

    Publication Year: 1989, Page(s):25 - 29
    Cited by:  Papers (1)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (731 KB)

    The author describes the independent discovery of integrated injection logic (I/sup 2/L) in the early 1970s by researchers at IBM in West Germany and at Philips in the Netherlands. He examines the factors that motivated the work and contrasts the viewpoints and working methods of the two teams, the Germans proceeding along a logical path to a solution that revealed itself to the Dutch team in a fl... View full abstract»

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  • Ferroelectrics for nonvolatile RAMs

    Publication Year: 1989, Page(s):30 - 33
    Cited by:  Papers (12)  |  Patents (12)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (445 KB)

    The structure and operation of ferroelectric thin-film memory capacitors for use in nonvolatile random-access memory applications are described. The search for the ideal ferroelectric material for ferro-electronic memory applications is examined. Possible military and nonmilitary applications of these memories are noted.<<ETX>> View full abstract»

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  • High-speed 32-bit buses for forward-looking computers

    Publication Year: 1989, Page(s):34 - 37
    Cited by:  Papers (4)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (756 KB)

    The features offered by current high-performance 32-bit system buses are examined. They allow multiprocessing, scalability, block transfers to RAM, cache coherence, and autoconfiguration (the ability to poll boards connected to them, identify the boards, and adjust the software interface accordingly). The factors that need to be taken into account when designing these buses are considered, and the... View full abstract»

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  • Photovoltaics: technical gains and an uncertain market

    Publication Year: 1989, Page(s):42 - 43
    Cited by:  Papers (1)  |  Patents (3)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (229 KB)

    The current state of the US photovoltaics industry is examined. It is noted that while appropriate technologies exist in the research laboratory, an industrial infrastructure is not in place. The approach that offers the best chance of making utility and other large-scale applications practical within the next five to ten years, namely, thin semiconductor films, is discussed. The cost of R&D p... View full abstract»

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