IEEE Journal of Solid-State Circuits

Volume 1 Issue 1 • Sept. 1966

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Displaying Results 1 - 16 of 16
  • [Inside front cover - September 1966]

    Publication Year: 1966, Page(s): f2
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  • Table of contents (September 1966)

    Publication Year: 1966, Page(s): 1
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  • Introduction (September 1966)

    Publication Year: 1966, Page(s): 2
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  • Foreword (September 1966)

    Publication Year: 1966, Page(s): 3
    Cited by:  Papers (1)
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  • An Integrating Digital Light Meter

    Publication Year: 1966, Page(s):4 - 7
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (649 KB)

    A description is given of a novel light-to-frequency converter circuit which makes possible a very simple digital light meter using conventional frequency counting techniques. This circuit combines the principle of time-integration, the high stability of reverse biased silicon planar photodiodes, and first order dark current compensation to yield a potentially 0.1 percent accuracy light meter. Som... View full abstract»

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  • An Integrated Temperature Sensor-Controller

    Publication Year: 1966, Page(s):8 - 13
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (979 KB)

    The temperature sensor-controller (TSC) and its associated circuit is a multifunctional or systems oriented linear monolithic integrated silicon device. It is designed for low cost (i.e., high yields) and high functional utility. The device has the capability of temperature stabilizing its own environment and that of an associated circuit over a wide temperature range. It can also measure and prov... View full abstract»

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  • Very Low-Drift Complimentary Semiconductor Network dc Amplifiers

    Publication Year: 1966, Page(s):13 - 18
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (938 KB)

    This paper describes a new approach to the fabrication of a variety of monolithic direct coupled amplifiers with typical equivalent differential input drifts of 0.1 to 0.2 /spl mu/v//spl deg/C. These amplifiers exhibit a significant improvement in temperature stability over current state-of-the-art IC amplifiers, and complete with chopper stabilized units in many respects. In these amplifiers, a m... View full abstract»

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  • A Highly Desensitized, Wide-Band Monolithic Amplifier

    Publication Year: 1966, Page(s):19 - 28
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1726 KB)

    An all-diffused monolithic feedback triple with a maximum bandwidth of 50 MHz, 40 dB of feedback, and gain adjustable from 34 dB to 52 dB is described. Harmonic distortion is less than 0.15 percent at 0.5 MHz and gain variation is less than /spl plsmn/0.25 dB from -55/spl deg/C to +125/spl deg/C. Detailed analysis of the amplifier performance is carried out and an accurate design technique based u... View full abstract»

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  • Design of Integrable Desensitized Frequency Selective Amplifiers

    Publication Year: 1966, Page(s):29 - 35
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1102 KB)

    Synthesis procedures are presented for the synthesis of prototype frequency selective amplifiers suitable for semiconductor integrated circuit realization. Constraints and degrees of freedom imposed by semiconductor integrated passive and active components are incorporated in feedback amplifier designs. In order to achieve desensitized response, first-order pole-sensitivity functions are used in t... View full abstract»

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  • The Comparative Performance of FET and Bipolar Transistors at VHF

    Publication Year: 1966, Page(s):35 - 39
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (746 KB)

    The relative performance of FET and bipolar transistors 200 MHz AGC amplifiers in a TV tuner is discussed. It is concluded that both junction and insulated gate FET's have better overload capability than the bipolar transistor though they have a lower stable gain. The noise figure of the IG FET increases less rapidly with AGC than does the noise figure of the bipolar transistor. The performance of... View full abstract»

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  • Integrated Selective Amplifiers Using Frequency Translation

    Publication Year: 1966, Page(s):39 - 44
    Cited by:  Papers (6)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1064 KB)

    Integrated band-pass amplifiers with high selectivity and good desensitivity can be realized, using the principle of frequency translation. In contrast to previously proposed systems in which frequency translation is achieved by periodic switching, this system uses analog multipliers as the basic elements, thereby obtaining improved high-frequency performance and reduced distortion. The properties... View full abstract»

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  • Varactor S-Band Direct Phase Modulator

    Publication Year: 1966, Page(s):45 - 51
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1253 KB)

    This paper describes the design technique and the test results for an S-band direct phase modulator with extremely linear phase characteristics. A modulation index of 2.4 radians (300/spl deg/ phase variation) with a phase distortion of less than 0.5 percent was obtained at 2.2 GHz. The modulator consisted of two cascaded stages, each stage employing a pair of low-loss varactor diodes. Amplitude m... View full abstract»

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  • The Logarithmic Tunnel Diode Amplifier

    Publication Year: 1966, Page(s):52 - 58
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1215 KB)

    This paper describes design techniques and performance characteristics of a high-frequency logarithmic amplifier. The technique used is to sum the detected outputs of each amplifier in a cascade in order to generate a straight line segment approximation to the desired logarithmic responses. It is shown that the normal RF characteristics of tunnel diode amplifiers approximate this performance when ... View full abstract»

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  • A 2.5D Ferrite Memory Sense Amplifier

    Publication Year: 1966, Page(s):58 - 63
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (925 KB)

    In recent years, large-core memories have been developed that use two-wire arrays and are operated in a mode colloquially called 2.5D. The intrinsic noise problem in a 2.5D ferrite memory system is quite severe because the core signals must be sensed off an array line which is also conducting a half-select drive current. The resulting large pedestal and delta noise components, which are generated ... View full abstract»

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  • Design of Integrated Selection and Recirculation Circuitry for a High-Speed, Low-Power, Magnetic Thin-Film Memory

    Publication Year: 1966, Page(s):63 - 69
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1163 KB)

    The circuit design for a high-speed, low-power, magnetic thin-film memory is described. The modest operating-current requirements of the memory element, 50 milliampere word currents and 40 milliampere bit currents, permit the use of integrated selection and recirculation circuits. The selection system uses one transistor per word line and has a matrix array of word drivers and word switches to sel... View full abstract»

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  • Contributors (September 1966)

    Publication Year: 1966, Page(s):70 - 72
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Aims & Scope

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits.

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