# 2011 International Conference on Simulation of Semiconductor Processes and Devices

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Displaying Results 1 - 25 of 84
• ### [Front and back cover]

Publication Year: 2011, Page(s):c1 - c4
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• ### [Title page]

Publication Year: 2011, Page(s):i - vi
| PDF (29 KB)
• ### Technical program and contents

Publication Year: 2011, Page(s):vii - xviii
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• ### TCAD challenges and some Fraunhofer solutions

Publication Year: 2011, Page(s):1 - 4
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In order to meet its industrial target to reduce the development time and costs for new semiconductor technologies, devices and circuits, TCAD must meet various challenges which are outlined in the ITRS. After a short outline of these challenges, related results obtained at Fraunhofer for the simulation of lithography and other topography steps, dopant diffusion/activation, device architectures an... View full abstract»

• ### Critical analysis of 14nm device options

Publication Year: 2011, Page(s):5 - 8
Cited by:  Papers (6)
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Modeling challenges and solutions for silicon based high performance device options at the 14nm node are presented. A variety of devices are being considered, using a variety of methods to analyze the devices objectively. Partially depleted silicon on insulator (PDSOI) devices are compared against extremely thin (ETSOI) and FinFET devices. View full abstract»

• ### First-principles study of Si CMOS materials and nanostructures

Publication Year: 2011, Page(s): 9
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Summary form only given. The technology roadmap reflects that complementary metal-oxide-semiconductor field-effect transistors based on silicon will reach absolute limits on its performance within the next decade. In microelectronics, quantum effects become important and the device performance is very sensitive to defects at or close to interfaces. To improve the device operation, it is urgent to ... View full abstract»

• ### Statistical MOSFET current variation due to variation in surface roughness scattering

Publication Year: 2011, Page(s):275 - 278
Cited by:  Papers (1)
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An efficient and accurate method to include surface roughness scattering from a general, realistic synthesized surface in 3D Monte Carlo simulation is presented with verification. The method is then applied to study drain current variation due to variation in surface roughness scattering in an 18nm bulk Silicon nMOSFET, highlighting substantially increased variation at low drain bias compared with... View full abstract»

• ### A mobility model correction for ‘atomistic’ drift-diffusion simulation

Publication Year: 2011, Page(s):279 - 282
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A comprehensive statistical investigation of the increase in resistance associated with charge trapping in atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping. View full abstract»

• ### The effect of compact modelling strategy on SNM and Read Current variability in Modern SRAM

Publication Year: 2011, Page(s):283 - 286
Cited by:  Papers (4)
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It has been shown that sub 100nm SRAM is particularly sensitive to stochastic device variability. In this paper we consider two correlated figures of merit for SRAM, Static Noise Margin (SNM) and Read Current. For the purposes of this paper 1,000 3D atomistic simulations of microscopically different 25nm P and N bulk MOSFETs were performed, and statistical compact models were then extracted for ea... View full abstract»

• ### Nanosized metal grains induced electrical characteristic fluctuation in 16 nm bulk and SOI FinFET devices with TiN/HfO2 gate stack

Publication Year: 2011, Page(s):287 - 290
Cited by:  Papers (1)
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In this study, the work function fluctuation (WKF) induced device variability in 16-nm-gate bulk and SOI FinFETs is for the first time explored by using an experimentally calibrated three-dimensional (3D) device simulation. Random nanosized grains of TiN gate are statistically positioned in the gate region of device to examine the associated electrostatic and carriers' transport properties, concur... View full abstract»

• ### Correlation between interface traps and random dopants in emerging MOSFETs

Publication Year: 2011, Page(s):291 - 294
Cited by:  Papers (1)
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In this work, we for the first time study the fluctuation and interaction between interface traps (ITs) and random dopants (RDs) of 16 nm MOSFETs. Totally random devices with 2D ITs at Si/high-κ oxide interface and 3D RDs inside channel are simultaneously examined using an experimentally validated 3D device simulation. Pure random ITs at Si/high-κ oxide interface will increase the th... View full abstract»

• ### Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study

Publication Year: 2011, Page(s):295 - 298
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Schottky-barrier changes by structural disorders are studied using the first-principles calculation and adopting Au/Si interface. It is shown that the structural disorders prefer to locate near the interface, but the penetration depth of the MIGS into Si is about 5 Si layers similar to clean interface even when disorders exist Reflecting such penetration, Schottky barrier for holes shows little ch... View full abstract»

• ### A wavelet method to solve high-dimensional transport equations in semiconductor devices

Publication Year: 2011, Page(s):299 - 302
Cited by:  Papers (5)
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This paper reports the first numerical solver for the Boltzmann transport equation (BTE) that uses wavelets as basis functions. The main advantage of wavelets is that they offer modern compression and adaptation techniques that could cope with the “curse of dimensionality” of the 6-dimensional phase space. An adequate numerical method for the BTE has been developed which combines a c... View full abstract»

• ### Numerical methods for a quantum energy transport model arising in scaled MOSFETs

Publication Year: 2011, Page(s):303 - 306
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This paper describes numerical methods for a four-moments quantum energy transport(QET) model, which is derived by using a diffusion scaling in the quantum hydrodynamic model. Space discretization is performed by a new set of unknown variables. Numerical stability and convergence are obtained by developing an iterative solution method with a relaxation method. Numerical results in a scaled MOSFET ... View full abstract»

• ### A Level Set simulator for nanooxidation using non-contact atomic force microscopy

Publication Year: 2011, Page(s):307 - 310
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Atomic force microscopy (AFM) can be used as a lithographic technique capable of manufacturing nanometer-sized devices. A simulator for AFM, implemented in a Level Set environment, is presented. The simulator uses empirical models to deduce the shape of a desired nanodot based on the applied voltage, pulse time, and ambient humidity. The shape of an AFM nanowire depends on the same factors as the ... View full abstract»

• ### Bridge-function pseudospectral method for quantum mechanical simulation of nano-scaled devices

Publication Year: 2011, Page(s):311 - 314
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In this paper we show the effectiveness and powerfulness of a pseudospectral method (PSM) with newly developed bridge-functions, which ensure the continuity of physical quantities, for the solution of the 3D Schrödinger equation, Poisson's equation, in addition, non-equilibrium Green's function (NEGF) on equal footing with high accuracy and negligible computational overheads. By comparing ... View full abstract»

• ### Low-dimensional quantum transport models in atomistic device simulations

Publication Year: 2011, Page(s):315 - 318
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The paper presents a method for atomistic quantum transport simulations in nanowire (NW) MOSFETs. The original tight-binding (TBM) Hamiltonian of the nanostructure is replaced with an approximate model which reproduces the transport properties at atomistic level. Small size of the equivalent model (EM) makes the atomistic transport simulation computationally cheap and allows the inelastic scatteri... View full abstract»

• ### Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs

Publication Year: 2011, Page(s):11 - 14
Cited by:  Papers (2)
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Degradation and recovery of a multi-layer high-k SiGe pMOSFET due to the negative bias temperature instability (NBTI) is modeled on the basis of a refined non-radiative multi-phonon (NMP) theory. As the SiGe-layer forms a quantum-well inside the substrate, quantum mechanical effects like subbands are incorporated into the model. In combination with a distribution of defects featuring different ene... View full abstract»

• ### Multi scale modeling of multi phonon hole capture in the context of NBTI

Publication Year: 2011, Page(s):15 - 18
Cited by:  Papers (2)
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We report on a novel approach to the modeling of non-radiative multi phonon transitions in semiconductor devices. Using line shapes calculated from density functional theory, the hole capture rate due to a non-radiative multi phonon process is computed for an MOS structure. The charge carriers in the MOS structure are described using a non-equilibrium Green's function formalism that makes it possi... View full abstract»

• ### Modeling statistical distribution of random telegraph noise magnitude

Publication Year: 2011, Page(s):19 - 22
Cited by:  Papers (2)
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Random telegraph noise (RTN) magnitude of MOSFETs is analyzed using three-dimensional device simulation taking random discrete dopant into account. The maximum RTN magnitude is inversely proportional to the RTN region area in which the surface potential is in the vicinity of its saddle point. The inverse of the maximum RTN magnitude exhibits a normal distribution. View full abstract»

• ### A compact model for early electromigration lifetime estimation

Publication Year: 2011, Page(s):23 - 26
Cited by:  Papers (2)
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A compact model for early electromigration failures in copper dual-damascene M1/via structures is proposed. The model is derived based on relevant physical effects of the early failure mode, where a rigorous void nucleation model and a simple mechanism for slit void growth are considered. As a result, a simple analytical model for the early electromigration lifetime is obtained. In addition, it is... View full abstract»

• ### Effects of atomic disorder on carrier transport in Si nanowire transistors

Publication Year: 2011, Page(s):27 - 30
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Effects of oxidation-process-induced atomic disorder on extended electronic states in the channel region of narrow Si nanowire (NW) field-effect-transistors (FETs) are theoretically investigated by using the molecular dynamics, empirical tight-binding, and non-equilibrium Green's function methods. Simulation results show that the injection velocity in n-type Si NW FETs is less affected by the diso... View full abstract»

• ### Strong anisotropy and diameter effects on the low-field mobility of silicon nanowires

Publication Year: 2011, Page(s):31 - 34
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We describe a method to couple the sp3d5s*-spin-orbit-coupled (SO) atomistic tight-binding (TB) model and linearized Boltzmann transport theory for the calculation of low-field mobility in Si nanowires (NWs). We consider scattering mechanisms due to phonons and surface roughness. We perform a simulation study of the low-field mobility in n-type and p-type Si NWs of diameters ... View full abstract»

• ### Simulation of channel electron mobility due to scattering with interfacial phonon-plasmon modes in silicon nanowire under the presence of high-k oxide and metal gate

Publication Year: 2011, Page(s):35 - 38
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The channel electron mobility of a 1D nanowire due to scattering with interfacial phonon-plasmon modes arising from the high-k dielectric material under the presence of polysilicon or metal gate is studied in this manuscript. We solved the dispersion relationship of the coupled modes and the accompanying effective scattering potential for carrier relaxation in the channel. The resulting mobility w... View full abstract»

• ### Fully analytic compact model of ballistic gate-all-around MOSFET with rectangular cross section

Publication Year: 2011, Page(s):39 - 42
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We develop a fully analytic compact model of gate-all-around metal-oxide-semiconductor field-effect transistors in the ballistic transport. The potential shape in the wire cross section is approximated by a parabolic function. With the model potential, electron energy levels are derived analytically and have an unknown parameter. The electron energy levels are determined by solving approximately t... View full abstract»