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# IEEE Transactions on Magnetics

## Issue 7  Part 1 • July 2014

This issue contains several parts.Go to:  Part 2

## Filter Results

Displaying Results 1 - 25 of 50
• ### [Front cover]

Publication Year: 2014, Article Sequence Number: 0004101
| PDF (1572 KB)
• ### IEEE Transactions on Magnetics publication information

Publication Year: 2014, Article Sequence Number: 0004201
| PDF (197 KB)
• ### IEEE Magnetics Society Information

Publication Year: 2014, Article Sequence Number: 0004301
| PDF (104 KB)
• ### IEEE Transactions on Magnetics institutional listings

Publication Year: 2014, Article Sequence Number: 0004401
| PDF (191 KB)

Publication Year: 2014, Article Sequence Number: 0101103
| PDF (225 KB)
• ### Chairmen’s Preface

Publication Year: 2014, Article Sequence Number: 0301301
| PDF (74 KB) | HTML
• ### Proceedings of the Asia-Pacific Data Storage Conference (APDSC 2013)

Publication Year: 2014, Article Sequence Number: 0301401
| PDF (31 KB)
• ### APDSC'13 Committees

Publication Year: 2014, Article Sequence Number: 0301503
| PDF (39 KB)
• ### Magnetics in Smart Grid

Publication Year: 2014, Article Sequence Number: 0900107
Cited by:  Papers (7)
| | PDF (1166 KB) | HTML

A revolution in power transmission and distribution, driven by environmental and economic considerations, is occurring all over the world. This revolution is spearheaded by the development of the smart grid. The smart grid is bringing profound change to both the power systems and many related industries. This paper reviews the development of the smart grid and its correlation with magnetics, inclu... View full abstract»

• ### Injection Locking of Spin-Torque Nano-Oscillators

Publication Year: 2014, Article Sequence Number: 1401503
Cited by:  Papers (2)
| | PDF (652 KB) | HTML

We demonstrated the phase locking of a spin-torque oscillator (STO) to an alternating current (ac) using macrospin and micromagnetic simulations. We found that the locking properties of both approaches agree with each other. The phase difference between the STO and the injected ac stabilizes at Δφ ≈ 90° and is not sensitive to the initial phase difference, which provide... View full abstract»

• ### High-Frequency Vortex-Based Spin Transfer Nano-Oscillators

Publication Year: 2014, Article Sequence Number: 1401604
| | PDF (438 KB) | HTML

Spin transfer torque oscillators based on magnetic vortex precession can deliver output powers large enough for practical applications. In addition they do not require discrete electronic components, such as capacitors or inductors, to tune the oscillation frequency. At the current stage, this oscillation frequency is still too low and can be increased only by trading off the output power. Here, w... View full abstract»

• ### Evaluation of Electrical, Mechanical Properties, and Surface Roughness of DC Sputtering Nickel-Iron Thin Films

Publication Year: 2014, Article Sequence Number: 2005304
Cited by:  Papers (2)
| | PDF (556 KB) | HTML

The NiFe thin films were prepared at room temperature by DC sputtering technique from a NiFe target onto silicon wafer, NBK7 and STIM35 glass substrates. The optimal deposition condition of NiFe thin films was obtained to be used for high density magnetic recording applications. The film thickness was determined by the SEM measurement. The electrical resistivity of the NiFe thin film with a thickn... View full abstract»

• ### Gradient-Composition Sputtering: An Approach to Fabricate Magnetic Thin Films With Magnetic Anisotropy Increased With Temperature

Publication Year: 2014, Article Sequence Number: 2102306
Cited by:  Papers (4)
| | PDF (778 KB) | HTML

Magnetic anisotropy is always known to decrease with temperature and so far there has been no work in the literature reporting about any experimental observation of the increment of magnetic anisotropy with temperature in any thin films other than the one reported in our previous papers. In this paper, we demonstrate that gradient-composition sputtering technique is a method to fabricate magnetic ... View full abstract»

• ### Influence of LaNiO3 Buffer Layer on the Magnetic Properties of Thin Perovskite Manganites

Publication Year: 2014, Article Sequence Number: 2503404
| | PDF (389 KB) | HTML

The influence of a thick epitaxial buffer layer on the magnetic properties of thin perovskite manganite films was studied. The deposition of a thick LaNiO3 buffer on single-crystal (001) LaAlO3 substrate shifted the magnetic anisotropy of a thin La0.7Sr0.3MnO3 toward the sample plane, while maintaining its saturation magnetization. Possible or... View full abstract»

• ### La-Co Pair Substituted Strontium Ferrite Films With Perpendicular Magnetization

Publication Year: 2014, Article Sequence Number: 2800904
Cited by:  Papers (3)
| | PDF (1054 KB) | HTML

La-Co pair substitution is proposed to be an effective way to improve the magnetic properties of strontium ferrite films. Based on ab initio simulations, the structure parameters and magnetic performance of La-Co pair substituted Sr-M (SrFe12O19) are investigated. La-Co pair substituted Sr-M (Sr1-xLaxFe12-yCoyO19) thin fi... View full abstract»

• ### Electrical Switching of Al-Doped Amorphous SiOx Thin Films

Publication Year: 2014, Article Sequence Number: 3000603
| | PDF (1108 KB) | HTML

This paper's investigations aimed to tackle crystal defects, which lead to reliability issues of resistive memory and we explored films of Al-doped amorphous SiOx as homogeneous matrix. The electrical resistance switching of Pt/Si(Al)Ox/TiN stacks was studied. After a forming process, the SET and RESET voltages are 2.2 and 1.1 V, respectively. The high- and low-resistance states are dis... View full abstract»

• ### Resistive Switching Behavior of Al/Al2O3/ZrO2/Al Structural Device for Flexible Nonvolatile Memory Application

Publication Year: 2014, Article Sequence Number: 3000704
Cited by:  Papers (1)
| | PDF (2176 KB) | HTML

Resistive switching memory with good performance can be possibly used in next-generation nonvolatile memory and flexible electronics. In the previous studies, some of the flexible resistive switching layers were organic materials. In this paper, an inorganic Al/Al2O3/ZrO2/Al flexible resistive switching memory fabricated at room temperature is proposed for the firs... View full abstract»

• ### Investigating the Uneven Current Injection in Perovskite-Based Thin Film Bipolar Resistance Switching Devices by Thermal Imaging

Publication Year: 2014, Article Sequence Number: 3000804
| | PDF (341 KB) | HTML

Bipolar resistive switching (RS) phenomenon in planar Al/Pr0.7Ca0.3MnO3 (PCMO)/Ti devices was investigated by thermoreflectance method. Thermal images of devices undergoing switching were used to quantify the unevenness of injected current under different voltage bias. At low resistance state, the injected current at the current crowding area of the Al/PCMO interfa... View full abstract»

• ### Resistive Switching in Perovskite-Oxide Capacitor-Type Devices

Publication Year: 2014, Article Sequence Number: 3000904
Cited by:  Papers (2)
| | PDF (354 KB) | HTML

Resistive switching effect was demonstrated in the Ti/Pr0.7Ca0.3MnO3 (PCMO)/LaNiO3/Ti top-down device structure. A high resistance state was activated by a forming process. Hysteretic current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinatio... View full abstract»

• ### Effect of Underlayer Structures on Microstructures and Magnetic Properties of Co-Rich Co-Pt Films Prepared at Ambient Temperature

Publication Year: 2014, Article Sequence Number: 3201704
Cited by:  Papers (1)
| | PDF (1251 KB) | HTML

Granular Co-rich Co-Pt nanograins having perpendicular coercivity (Hc⊥) of 4.0 kOe and perpendicular squareness (S⊥) of 0.75 can be achieved by depositing Co80Pt20 (25 nm) film onto Ru (30 nm)/Ag (100 nm) bilayer films using an argon pressure of 5 mTorr to deposit an Ag underlayer at ambient temperature. However, it is found that the Co View full abstract»

• ### Fabrication of L11 Phase CoPt Film on Glass Substrate With [Co/Pt] Multilayer Structure

Publication Year: 2014, Article Sequence Number: 3201804
Cited by:  Papers (1)
| | PDF (1300 KB) | HTML

L11 CoPt hlms were fabricated on glass substrate with Pt underlayer by alternate deposition of Co and Pt hlms. The effect of individual Co and Pt thickness, and the total CoPt hlm thickness on structural and magnetic properties were investigated. In this paper, the experiments were divided into two parts. In the hrst part, [(x)Co1/(x)Pt0.75]n hlms with v... View full abstract»

• ### Perpendicular Magnetic Anisotropy in MgO/CoFeB/Nb and a Comparison of the Cap Layer Effect

Publication Year: 2014, Article Sequence Number: 3201904
Cited by:  Papers (10)
| | PDF (315 KB) | HTML

High perpendicular magnetic anisotropy (PMA) has been recently revealed in CoFeB/MgO/CoFeB tunnel junctions if the thickness of CoFeB is <;1.5 nm. However, PMA has been observed in MgO/CoFeB/Ta but not in MgO/CoFeB/Ru, indicating a metallic cap layer effect. In this paper, we extend the study to MgO/CoFeB(0.8-1.8 nm)/Nb(1.3 nm) by sputtering and find that the magnetic behavior of MgO/CoFeB/Nb r... View full abstract»

• ### Stabilized Perpendicular Magnetic Anisotropy $boldsymbol {L1_{1}}$ CoPtCu Thin Film at Room Temperature

Publication Year: 2014, Article Sequence Number: 3202004
| | PDF (11012 KB) | HTML

In this paper, 4 nm-thick Co27Pt50Cu23 magnetic thin films were deposited on a (111)-textured Pt underlayer on a glass substrate at different substrate temperatures (Ts). Hard magnetic behaviors with outstanding perpendicular magnetic anisotropy (PMA) were obtained as Ts = RT - 400 °C. The result indicates the formation of superstructur... View full abstract»

• ### A Novel Device Geometry for Vortex Random Access Memories

Publication Year: 2014, Article Sequence Number: 3400404
| | PDF (662 KB) | HTML

The vortex state is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of sub-micrometer size. The vortex state has a specific excitation mode: the in-plane gyration of the vortex structure about its equilibrium position. This mode can be electrically excited by a spin-polarized current. When the gyrating vortex reaches... View full abstract»

• ### Numerical Simulation of In-Line Gratings for Differential Push-Pull Signals Using the Scalar Diffraction Method

Publication Year: 2014, Article Sequence Number: 3500104
Cited by:  Papers (1)
| | PDF (2040 KB) | HTML

This paper investigates the in-line differential push-pull signal simulation for the Blu-ray disk system using the scalar diffraction theory. A simple calculation scheme was proposed. With the simulation flow, six different types of in-line gratings were analyzed, compared, and discussed. The simulation results show that the pattern with three segmented central regions has the best signal performa... View full abstract»

## Aims & Scope

IEEE Transactions on Magnetics is a peer-reviewed, archival journal in science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The journal publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Pavel Kabos
National Institute of Standards and Technology