2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)

New results on the nanoscale mechanics of shale and the nano-mechanics and nano-chemistry of asphalt binder (bitumen) will be presented in the context of the history and promise of atomic force microscopy. View full abstract»

Nanostructures of silicon are becoming increasingly important as they may combine new opto-electronic features or devices with CMOS technology. This enables the integration of e.g. nanowire sensors with readout electronics or nanoscale LEDs grown directly on Si wafers. A problem here is that nanostructures are often fabricated using a bottom-up approach necessitating a second deposition step of ra... View full abstract»

Graphene, a single layer of carbon atoms bonded in a hexagonal lattice, is simultaneously the thinnest, strongest and stiffest known material, as well as being an excellent conductor of both heat and electricity. Reassembly of individual 2D graphene nanosheets into 3D macroscopic structures such as films, papers or fibers offers immense potentials for many important applications such as structural... View full abstract»

Summary form only given. Combining low-dimensional nanomaterials into hybrid nanostructures is a promising avenue to obtain enhanced material properties and to achieve nanodevices operating with novel principles. The family of carbon allotropes, with its rich chemistry and physics, attracts a great deal of attentions in forming novel hybrid nanostructures. In particular, the excellent electrical c... View full abstract»

In this talk, we summarize our recent progress in the applications of vertically aligned carbon nanotubes (VACNT) arrays for lithium ion batteries (LIBs) and coplanar micro-supercapacitors (MSCs). We begin with the introduction of structure advantages of using VACNTs for energy storage devices, and subsequently summarize our research developments on the applications of VACNT arrays in various high... View full abstract»

This work illustrates the performance of n-type carbon nanotube field effect transistors (CNTFET) contacted with few layer graphene. The true barrier height at graphene- CNT junction is estimated using temperature dependent I-V measurements. Thermionic emission model for carrier transport in CNTs is used in the study. The calculated barrier height values for electron transport are extremely small ... View full abstract»

This work aims to improve the performance of carbon nanostructures for the cold field emission. In this contribution we introduce a thermal method to prepare the BN doped carbon nanotube (CNT), which is investigated with X-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscope (HRTEM) and scanning TEM (STEM). A density functional theory (DFT) calculation is carried ... View full abstract»

Graphene is an important nano-material with extraordinary properties. An established PVD based Graphene synthesis method is engineered in order to demonstrate the versatility of the growth method with respect to the quality and number of layers of synthesized Graphene. Annealing temperature and annealing duration are varied to study their effect on the growth. The quality and number of layers of G... View full abstract»

Heterogeneous single wall carbon nanotubes and graphene were synthesized using the electric arc method. The arc conditions were monitored to study the correlation between the operating parameters and the obtained products. Substitution with boron and/or nitrogen was confirmed through spectroscopic chemical analyses. It was found that, as soon as N is present in suitable amount, the formation of BN... View full abstract»

We discuss fabrication, characterization of graphene sensor for detection of different gases at low pressure. Two types of micro devices were fabricated, the first one is the kelvin structure and the second one is the membrane structure. Cavities were etched in the SiO2 to form the membrane. Two techniques for synthesis of Graphene was used in this work: Chemical vapor deposition using Cu as catal... View full abstract»

In this study, ab-initio calculations were performed to obtain phonon dispersions of single, bilayer graphene, and graphite structures. Using these dispersions single mode relaxation times, thermal conductivities, and mean free paths (MFPs) have been calculated. Finally, calculated variables were used to understand the effects of additional layers to thermophysical properties, phonon mode contribu... View full abstract»

As the demand is increasing for the detection of specific gases and vapours for public safety, environment and medicine, there is a large research effort to develop cheap and easy-to-use gas sensors. Meanwhile, carbon nanotubes (CNTs), because of their outstanding physical and chemical properties, have also been investigated for such applications. Most of the research involving CNTs for gas sensin... View full abstract»

Twisted bilayer graphene (tBLG) presents electronic properties that depend on the relative misalignment and interaction between layers. Here, we studied chemical vapor deposited (CVD) monolayer graphene and tBLGs by Raman spectroscopy in order to estimate the twist angle. We also compared the transport properties of a monolayer and a tBLG (θ > 20 °). We found that the tBLG superla... View full abstract»

Graphene based tunnel devices such as a resonant tunnel device and a bilayer pseudo-spin field effect transistor (BiSFET) require an ultra-thin interlayer dielectric between two graphene layers to not only enhance the probability of tunnel but also minimize screening effects in graphene. Here, ultra-thin SiO2 dielectric is deposited on HOPG and CVD graphene using conventional E-beam eva... View full abstract»

A variety of iodine-based 1D nanocrystals were introduced into double-wall carbon nanotubes using the molten phase method, as an intermediate step for ultimately obtaining encapsulated metal nanowires. Based on HRTEM observations using different imaging modes (bright field, dark field, STEM) and associated analytical tools (EELS), it is revealed that the reality of nanotube filling is much more co... View full abstract»

This paper studies changes in the surface chemistry of carbon nanotubes (CNTs) while they are under ultrasonication process in Jeffamine D-230 polyetheramine medium. Jeffamine is used as curing agent in the nanocomposite manufacturing process. In the nanocomposite technology, ultrasonication process is employed as a method for dispersion of CNTs in a suspension. This research tries to investigate ... View full abstract»

In this paper, we propose to study the synthesis of fullerene nanoparticles (C60-C80) by electric arc method and to show the impact of very low filler content (0.005 wt.%) of those nanofillers on the electrical conductivity versus electric field of an epoxy nanocomposite. The results highlight a decrease in the DC electrical conductivity of the epoxy/fullerenes compared to th... View full abstract»

In this work, we will review the advantages and challenges of vertical devices which are seen as possible candidates to continue CMOS scaling. Different integration schemes will be discussed, also addressing the use of novel channel materials like III-V that could benefit from a vertical architecture to relax both gate length and wire diameter. Next to that, layout efficiency and the benefits of v... View full abstract»

This New top-down fabrication process using bio-template and neutral beam etching process have succeeded to grow GaAs quantum nano disc (ND) for optical communication devices. The size, the alignment and the density of ND were well controlled. Low temperature photoluminescence measurement confirmed that the quantum energy levels were formed in the present structure and made clear the usefulness of... View full abstract»

Phase Change Memory (PCM), based on the reversible transitions of chalcogenides such as Ge2Sb2Te5 (GST) between a high resistance amorphous state (binary `0') and low resistance crystalline state (binary `1'), is one of the leading contenders to complement or even replace existing technologies such as Flash, DRAM and HDD [1]. This is attributed to its size scalability (sub-10nm [2-4]), ultrahigh s... View full abstract»