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2016 74th Annual Device Research Conference (DRC)

19-22 June 2016

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Displaying Results 1 - 25 of 146
  • [Front cover]

    Publication Year: 2016, Page(s): c1
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  • [Title page]

    Publication Year: 2016, Page(s): 1
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  • [Copyright notice]

    Publication Year: 2016, Page(s): 1
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  • Technical program committee

    Publication Year: 2016, Page(s): 1
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  • [Blank page]

    Publication Year: 2016, Page(s): 2
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  • Table of contents

    Publication Year: 2016, Page(s):1 - 16
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  • Schedule of events

    Publication Year: 2016, Page(s):1 - 3
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  • Plenary session

    Publication Year: 2016, Page(s): 1
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  • Novel materials for next generation photonic devices

    Publication Year: 2016, Page(s): 1
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (77 KB)

    Ultrafast optoelectronics devices, critical for future telecommunication and data ultra high speed communications and data communications, have been limited in speed due to nature of the materials forming the devices. Only very few materials can be used today as substrates for high speed optoelectronics limiting the applicability of these devices and preventing their integration with other emergin... View full abstract»

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  • [Blank page]

    Publication Year: 2016, Page(s): 1
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  • Transistor innovation in the 21st century — A lesson in serendipity

    Publication Year: 2016, Page(s):1 - 2
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1224 KB) | HTML iconHTML

    Technology scaling has led to unprecedented level of integration with billions of high-speed nanotransistors on a single chip reducing the cost per function. On the device technology front, with continued scaling, device engineers have achieved new transistor breakthroughs and introduced innovations at a rapid pace followed by successful launch of commercially successful products such as high perf... View full abstract»

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  • Manipulating magnetic devices with spin-orbit torques

    Publication Year: 2016, Page(s): 1
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    Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. Until... View full abstract»

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  • [Blank page]

    Publication Year: 2016, Page(s): 1
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  • Wide bandgap devices

    Publication Year: 2016, Page(s): 1
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  • SiC and GaN from the viewpoint of vertical power devices

    Publication Year: 2016, Page(s): 1
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (81 KB) | HTML iconHTML

    Summary form only given. Wide-bandgap (WBG) semiconductors have attracted great attention as materials for the next-generation power devices since they have superior material properties compared to silicon (Si). The most advanced WBG semiconductor for power devices is silicon carbide (SiC). In 1987, the growth technology called “step-controlled epitaxy”, which enables single-phase (polytype) growt... View full abstract»

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  • [Blank page]

    Publication Year: 2016, Page(s): 1
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  • Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics

    Publication Year: 2016, Page(s):1 - 2
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    We report on the first ultra-wide bandgap Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistor (MISFET) with heterostructure engineered ohmic contacts. The large breakdown field of AlN (12 MV/cm) and the superior device figures of merit make wider bandgap AlGaN attractive for the next-generation RF power amplifiers and switches [1]. However, a critical ... View full abstract»

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  • An AlN/Al0.85Ga0.15N high electron mobility transistor with a regrown ohmic contact

    Publication Year: 2016, Page(s):1 - 2
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (227 KB) | HTML iconHTML

    The performance and efficiency of power devices depends on both high breakdown voltage and low on-state resistance. For semiconductor devices, the critical electric field (EC) affecting breakdown scales approximately as Eg25[1], making the wide bandgap semiconductor materials logical candidates for high voltage power electronics devices. In particular, AlGaN alloys... View full abstract»

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  • First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC

    Publication Year: 2016, Page(s):1 - 2
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    This is the first demonstration of strained AlN/GaN/AlN quantum well FETs on SiC substrates. The device performance, though highly encouraging for the gate lengths used, can be significantly enhanced by scaling [4]. But significant improvements are expected by ensuring the absence of the 2D hole gas, and by exploring high temperature growth of thick AlN buffer layer on SiC. This can potentially re... View full abstract»

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  • Demonstration of GaN HyperFETs with ALD VO2

    Publication Year: 2016, Page(s):1 - 2
    Cited by:  Papers (1)
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    Owing to strong electron-electron interactions, transition metal oxide materials can exhibit multiple phases with vastly different electronic, magnetic, structural, and thermal properties. Reversible control of the transitions between these phases by electronic means can give rise to completely novel devices which can provide new functionalities and help to overcome limits of traditional semicondu... View full abstract»

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  • Emerging CMOS devices

    Publication Year: 2016, Page(s): 1
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  • Density scaling beyond the FinFET: Architecture considerations for gate-all-around CMOS

    Publication Year: 2016, Page(s): 1
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (97 KB)

    The promise of improved electrostatics and the ability to increase the amount of effective width (Weff) available in a given device footprint drove the semiconductor industry from planar CMOS transistors to the FinFET transistor starting at the 22 nm node. Numerous manufacturers are in large-scale production of 16 and 14 nm node FinFET technologies and there is no indication that a change in devic... View full abstract»

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    Publication Year: 2016, Page(s): 1
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  • Enhancing the performance of GepFETs using novel BF+implantation

    Publication Year: 2016, Page(s):1 - 2
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (496 KB) | HTML iconHTML

    Ge p+/n junctions with a high B activation level ( 2x1020cm-3) and favorable diffusion behavior (reduced junction depth are demonstrated using novel BF+implantation. These junctions are integrated with GeO2high-k gate stack to obtain a high on/off ratio Ge pFET with an enhancement of ON current. With the heavier mass compared to B+, BF+ may of... View full abstract»

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  • Electrically driven reversible insulator-metal phase transition in Ca2RuO4

    Publication Year: 2016, Page(s):1 - 2
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (370 KB) | HTML iconHTML

    We have investigated the electrically induced IMT in Ca2RuO4thin films whose transition temperature has been increased by >190 K (TIMT > 550K) using epitaxial strain engineering. We show using DC and transient I-V measurements that the electrically induced phase transition is electro-thermal in nature, and is driven by current induced self-heating. View full abstract»

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