1986 17th Annual IEEE Power Electronics Specialists Conference

23-27 June 1986

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Displaying Results 1 - 25 of 89
  • Cover page

    Publication Year: 1986, Page(s): c1
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  • Introduction pages

    Publication Year: 1986, Page(s):1 - 3
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  • Table of contents

    Publication Year: 1986, Page(s):1 - 4
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  • Author index

    Publication Year: 1986, Page(s):1 - 2
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  • 1. Plenary session

    Publication Year: 1986, Page(s): 1
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  • Closed-loop performance comparisons of switching regulators with current-injected control

    Publication Year: 1986, Page(s):3 - 12
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (3211 KB)

    The validity of applying state-space averaging and linearization to the control law of current-injected switching regulators for designs with wide-band, first-order, open-loop responses without RHP zeroes is verified. Quantitative closed-loop performance comparisons are made of current-injected versus voltage control for the boost and buck switching regulator topologies. View full abstract»

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  • Control of switched-mode converter harmonic-free terminal waveforms through internal energy storage

    Publication Year: 1986, Page(s):13 - 26
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (920 KB)

    It is shown that internal low-frequency energy storage can be used to achieve harmonic-free operation and controllable power factors in converters whose desired operations require unequal instantaneous input and output powers, such as in single-phase rectifiers, inverters, cycloconverters, and reactive power generators. A systematic synthesis and analysis technique is developed for such converters... View full abstract»

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  • Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction

    Publication Year: 1986, Page(s):27 - 38
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (1121 KB)

    A one-dimensional analytic model for the Insulated Gate Bipolar Transistor (IGBT) which includes a high-doped buffer layer in the low-doped bipolar transistor base is developed. The model is used to perform a theoretical trade-off study between IGBTs with and without the buffer layer. The study is performed for devices of equal breakdown voltages, and the critical parameters chosen to “trade-off” ... View full abstract»

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  • Series-resonant AC-power interface with an optimal power factor and enhanced conversion ratio

    Publication Year: 1986, Page(s):39 - 48
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (1174 KB)

    A new method of power pulse modulation with internal frequencies of tens of kHz which is also suitable for multikilowatt power levels is applied to a series-resonant converter system for generating synthesized multiphase bipolar waveforms with reversible power flow. The power circuitry of the converter is provided with one single high-frequency resonant link in the direct energy path. Natural curr... View full abstract»

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  • Computer-aided choice of digital PWM strategies

    Publication Year: 1986, Page(s):49 - 57
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (475 KB)

    The goal of this study is to define the optimal PWM strategy adapted to a given variable-speed induction motor drive. A complete set of simulation programs performs steady-state and transient analysis of wave-forms. Some original PWM modes have been implemented on two digital modulators. View full abstract»

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  • Zero-voltage switching technique in DC/DC converters

    Publication Year: 1986, Page(s):58 - 70
    Cited by:  Papers (5)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (3340 KB)

    A novel resonant switch operating under the principle of zero-voltage switching is presented. In contrast to the zero-current switching, this technique eliminates the switching loss and dv/dt noise due to the discharging of MOSFET's junction capacitances and the reverse recovery of diodes, and enables the converters to operate at yet higher frequencies. View full abstract»

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  • 2. Power semiconductor devices

    Publication Year: 1986, Page(s):71 - 72
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  • Circuit influences on COMFET™ (IGT) dynamic latching current

    Publication Year: 1986, Page(s):73 - 80
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (875 KB)

    Terminal measurements are made to verify that latching varies with gate drive resistance and occurs during turn off. dv/dt is varied from 1600 to 300 V/us with no impact on latch. A time-displaced turn-off current pulse demonstrates that latching occurs at very low drain voltages, suggesting a tailored gate drive. A brief discussion of device structure explains the observations. View full abstract»

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  • Use of depletion mode MOSFET devices in synchronous rectification

    Publication Year: 1986, Page(s):81 - 86
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (1245 KB)

    This paper examines the properties of a new power MOSFET operating as a depletion-mode device and used as a synchronous rectifier in a low-voltage, current-mode-control PWM switching regulator. The performance of this device is compared to both a Schottky diode and an enhancement-mode power MOSFET. A comparison of the efficiencies obtained for the three cases is presented. View full abstract»

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  • Turn-on principles of MOS-GTO

    Publication Year: 1986, Page(s):87 - 93
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (901 KB)

    MOS-GTOs represent a new generation of turn-off thyristors offering considerable advantages in the turn-off behaviour as compared to conventional GTOs. However, MOS-GTOs generally require two control electrodes for turn-on, which might be regarded as a disadvantage. This paper shows that in MOS-GTOs with a p-channel cathode structure it is possible to turn the thyristor on and off by controlling o... View full abstract»

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  • Characteristics of the high speed SI thyristor and its application as the 60kHz, 100kW and the efficiency of more than 90% inverter

    Publication Year: 1986, Page(s):94 - 103
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (2571 KB)

    Very low-loss, very high speed and snubber-circuitless performance of the newly fabricated high power 1200V–300A class of the static induction (SI) thyristor is introduced and it is applied to the 60kHz–100kW high efficiency (90%) inverter for induction heating. View full abstract»

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  • Performance analysis of a Bipolar Mode JFET (BMFET) with normally off characteristics

    Publication Year: 1986, Page(s):104 - 111
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (260 KB)

    The fabrication and the characterization of a family of power Bipolar Mode JFET's (BMFET) is reported. In these devices, blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm<sup>2</sup>) have been obtained. Results allow to get an insight in the physics of operation of the BMFET, to define their theoretical limits of operation, and to understand the reasons ... View full abstract»

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  • Switching behaviour of a BIMOS switching stage

    Publication Year: 1986, Page(s):112 - 119
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    The switching behaviour of a BIMOS switching stage is investigated, taking into account the most important parasitic network and device parameters. Its short-circuit behaviour is also discussed and ways of improving it are presented. The power range is expanded by connecting power MOSFETs in parallel and extending the switching behaviour of the Darlington stage. The parallel-switching of FETs is a... View full abstract»

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  • A method for simple design of very high voltage multiple field limiting ring structures

    Publication Year: 1986, Page(s):120 - 124
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (171 KB)

    Two-dimensional calculations on multiple field limiting ring structures can be simplified if wide rings are used. A design method using this assumption is presented, where the optimum ring design is determined from interpolations between single ring data. Influence of different parameter variations on ring design or on voltage yield is discussed. View full abstract»

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  • 3. Modeling simulation and analysis

    Publication Year: 1986, Page(s):125 - 126
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  • The effects of coupled output chokes on loop dynamics in multiple output converters

    Publication Year: 1986, Page(s):127 - 135
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    An investigation of the dynamic effects of coupled output chokes on multiple output buck converters reveals the potential presence of two zeros in the plant equation. These zeros can have a significant effect on the loop dynamics of the converter depending upon the relative turns ratios of the transformer and the coupled choke. View full abstract»

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  • Modelling and analysis of the coupled-inductor Ćuk converter

    Publication Year: 1986, Page(s):136 - 143
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    Small-signal model of coupled-inductor Ćuk converter including parasitic minding resistances is derived, and its essential network functions are presented. The basic model is transformed into an easy to use simplified form with analytic expressions for the zeros and poles locations. The dynamic properties of two practically important cases of inductor coupling are discussed and conditions for mini... View full abstract»

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  • A systematic method for the stability analysis of multiple-output converters

    Publication Year: 1986, Page(s):144 - 153
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (729 KB)

    This paper deals with the dynamics of multiple-output DC-DC converters. A multi-input-multi-output (MIMO) feedback system model incorporating effects of the output fluctuation is derived for the converter. Based on system theoretic tools, a set of stability conditions is obtained for the MIMO model; the result is used to formulate a stable margin. A practical five-output converter was selected for... View full abstract»

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  • Steady-state analysis and design of the parallel resonant converter

    Publication Year: 1986, Page(s):154 - 165
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    Five basic operating modes of the parallel resonant converter are analyzed. Three of the modes occur when the output filter inductor is removed and the remaining two occur when the filter inductor is large. Closed-form solutions are found for the two most important modes. Switching frequency, peak tank capacitor voltage, and peak tank inductor current are plotted in the output plane. These plots, ... View full abstract»

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  • Computer aided method to analyze parameter sensitivity of switching time of power semiconductors and its application to optimal design for power electronic circuits

    Publication Year: 1986, Page(s):166 - 175
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (644 KB)

    In recent years there has been paid much attention to the development of computer aided methods in analysis and design of power electronic circuits because the recent advances of switching power semiconductor devices. In this paper we propose a new and efficient computer aided algorithm for computing parameter sensitivities of turn-on and turn-off instants of power semiconductors for any given pow... View full abstract»

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