1987 IEEE Power Electronics Specialists Conference

21-26 June 1987

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Displaying Results 1 - 25 of 98
  • Cover page

    Publication Year: 1987, Page(s): 1
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  • [Title page]

    Publication Year: 1987, Page(s): 1
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  • [Copyright notice]

    Publication Year: 1987, Page(s): 1
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  • Message from the chairman

    Publication Year: 1987, Page(s): 1
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  • Conference committee

    Publication Year: 1987, Page(s): 1
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  • Program committee

    Publication Year: 1987, Page(s): 1
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  • IEEE power electronics council administrative committee

    Publication Year: 1987, Page(s): 1
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  • William E. Newell power electronics award

    Publication Year: 1987, Page(s): 1
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  • Table of contents

    Publication Year: 1987, Page(s):1 - 4
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  • Author index

    Publication Year: 1987, Page(s):1 - 2
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  • Session 1: Plenary session

    Publication Year: 1987, Page(s): 1
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  • A computer-aided design and simulation tool for switching converters

    Publication Year: 1987, Page(s):3 - 12
    Cited by:  Papers (4)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (5110 KB)

    A fully automated computer-aided design approach is presented which results in an optimal power stage and control circuit design. The design meets all dc, small signal and large signal closed-loop performance specifications. The proposed approach is very efficient; it can help in reducing component and manufacturing costs as well as design time and is successfully demonstrated on a multiple-output... View full abstract»

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  • Phase controlled DC-AC converter with high frequency switching

    Publication Year: 1987, Page(s):13 - 19
    Cited by:  Papers (17)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (3073 KB)

    A novel type of the sinusoidal DC-AC converter is presented, where a pair of switches is placed in each side of the primary and the secondary of the isolation transformer. This converter is controlled by the phase difference between the two pairs of switches. As a result, the transformer is miniaturized by making the switching frequency high. This converter is especially suitable for small UPS sys... View full abstract»

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  • A unified analysis of converters with resonant switches

    Publication Year: 1987, Page(s):20 - 30
    Cited by:  Papers (39)  |  Patents (1)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (6824 KB)

    Quasi-resonant converters are a recently introduced family of single-switch resonant converters featuring zero-current or zero-voltage switching. Recognition of the topological structure uniting these converters — and the PWM converters on which they are based — leads to general models of their dc and low-frequency ac behavior. An expression is derived that yields the dc conversion ratio of a quas... View full abstract»

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  • Self-thermal protecting power MOSFETs

    Publication Year: 1987, Page(s):31 - 36
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (1901 KB)

    A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs. View full abstract»

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  • Analysis and design of a dual series resonant converter for utility interface

    Publication Year: 1987, Page(s):37 - 45
    Cited by:  Papers (1)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (3777 KB)

    The use of a dual series resonant converter with phase-shifted operation for photovoltaic utility interface is presented. The analysis, sequence of operation and detailed design for a 5 kW system are presented. The inverter operates at a fixed frequency above the resonant frequency in order to reduce the switching losses in the devices. A general purpose Simulation program AT0SEC5 has been used to... View full abstract»

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  • A high response induction motor control system with compensation for secondary resistance variation

    Publication Year: 1987, Page(s):46 - 51
    Cited by:  Papers (6)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (3153 KB)

    A high response digital speed control system for the induction motor drive, which is based on the decoupled control method, has been developed. This control system can compensate the error of the time constant caused by the variation of temperature in the secondary circuit of the induction motor. This paper presents the principle of the control system and experimental results and discusses the com... View full abstract»

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  • Session 2A: Power semiconductor devices

    Publication Year: 1987, Page(s): 1
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  • Application of IGT/COMFET to zero-current switching resonant converters

    Publication Year: 1987, Page(s):55 - 60
    Cited by:  Papers (1)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (3388 KB)

    The problems associated with IGT/COMFET devices in PWM converters, such as turn-off current tailing and turn-off latching are largely avoided in a zero current switching resonant converter. Dv/dt induced phenomena, such as the power losses and latching, are identified as the predominant problems in using IGT/COMFET devices for very high frequency resonant operation. View full abstract»

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  • A low capacitance power MOSFET with an integral gate driver

    Publication Year: 1987, Page(s):61 - 68
    Cited by:  Papers (2)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (5115 KB)

    For efficient operation in the 10 MHz range, a resonant power converter needs a power MOSFET with very low capacitance for a given on-state resistance and an integral turn-off driver. The former allows the resonant frequency to be high and the gate drive losses low, while the latter avoids the parasitic inductance of bond wires used to connect the gate to an external driver. The reasons and method... View full abstract»

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  • Active protection for power MOS transistors

    Publication Year: 1987, Page(s):69 - 75
    Cited by:  Papers (1)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (3426 KB)

    This paper presents a feedback method for the protection of switching devices used in the fast commutation of inductive circuits in switching power converters. The new protection approach is being studied aiming faster, lighter and more efficient circuits compared with the conventional clampers and snubbers, The circuits proposed in this paper can be easily integrated in the same chip of the power... View full abstract»

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  • A universal input, fixed output, solid state, dc-to-dc converter

    Publication Year: 1987, Page(s):76 - 85
    Cited by:  Papers (1)
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (5746 KB)

    This paper describes a small switching power supply capable of direct operation from any dc source in the 100 to 450 volts range. The heart of the design is a single high voltage integrated circuit which includes the high voltage power switch and all control functions. A minimum number of external components are required to provide a regulated output of 12.5 to 17.5 volts dc, with a current rating... View full abstract»

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  • A power supply IC for 120/240-VAC line input

    Publication Year: 1987, Page(s):86 - 89
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (2028 KB)

    A Monolithic power supply which operates over a range of 30-264-V ac has been realized in a 500-V dielectrically isolated process. The circuit uses a GTO SCR current switch together with a series regulator to provide a 5-V dc output. With the addition of a resistor, the output can be adjusted to 24-V. Output power is 250∼mW at 5-V, increasing to 1.2-W at 24-V. The die measures 2.0 × 2.3 sq. mm and... View full abstract»

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  • A high performance FBSOA tester for bipolar transistors with extended SOA

    Publication Year: 1987, Page(s):90 - 98
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (4894 KB)

    This paper presents a non-destructive testing method for bipolar transistors and, in particular, for very rapid bipolar transistors such as the SIRET. The SIRET is a bipolar transistor with very short switching and storage times and, due to the extremely short emitter widths, has an extended SOA range. This work also discusses the limit load curves (FBSOA, FBAOA, RBSOA) of conventional bipolar tra... View full abstract»

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  • A high voltage light activated thyristor with novel over voltage self-protection structure

    Publication Year: 1987, Page(s):99 - 103
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (2371 KB)

    A new type of high voltage self-protected thyristor with a well structure formed in its p-base layer is described. The device structure is simple and easy to fabricate compared to past devices. Numerical analyses and experiments demonstrate that the breakover voltage of this thyristor can be controlled by varying the well diameter and its depth. The breakdown voltage fluctuation of the device is 1... View full abstract»

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