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2014 9th European Microwave Integrated Circuit Conference

6-7 Oct. 2014

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Displaying Results 1 - 25 of 179
  • [USB label]

    Publication Year: 2014, Page(s): 1
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  • [USB welcome]

    Publication Year: 2014, Page(s): 1
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  • Hub page

    Publication Year: 2014, Page(s): 1
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  • Session list

    Publication Year: 2014, Page(s): 1
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  • Table of contents

    Publication Year: 2014, Page(s):1 - 32
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  • Author index

    Publication Year: 2014, Page(s):1 - 16
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  • Detailed author index

    Publication Year: 2014, Page(s):1 - 93
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  • Abstract cards

    Publication Year: 2014, Page(s):1 - 170
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (481 KB)

    Presents abstracts for the articles comprising the conference proceedings. View full abstract»

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  • The end of indexes

    Publication Year: 2014, Page(s): 1
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  • Book of abstracts

    Publication Year: 2014, Page(s):1 - 32
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    Presents abstracts for the articles comprising the conference proceedings. View full abstract»

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  • About CP

    Publication Year: 2014, Page(s): 1
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  • Frequently asked questions

    Publication Year: 2014, Page(s):1 - 6
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  • Conference programme

    Publication Year: 2014, Page(s):1 - 112
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  • Fiera di Roma [Images from EuMW 2013]

    Publication Year: 2014, Page(s):1 - 3
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  • 2D numerical simulation for InGaP/GaAs HBT safe operating area

    Publication Year: 2014, Page(s):1 - 4
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1124 KB) | HTML iconHTML

    The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good ag... View full abstract»

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  • Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis

    Publication Year: 2014, Page(s):5 - 8
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (714 KB) | HTML iconHTML

    This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K at low as well as high injection levels. Low frequency generation recombination noise measurements revealed an electron trap with activation energy of 0.536eV. Then, from a rigorous physics-based noise s... View full abstract»

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  • Influence of parasitic effects of the “3ω” measurement setup to improve the determination of GaN HEMTs thermal impedance

    Publication Year: 2014, Page(s):9 - 12
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (813 KB) | HTML iconHTML

    The thermal impedance of Gallium Nitride based High Electron Mobility Transistors (GaN HEMTs) has been characterized using the “3ω method”. We already demonstrated in a previous work that, subject to certain conditions, the voltage oscillation at the third harmonic is the real image of the thermal impedance of the device. In this work, we propose both a theoretical approach to understand the limit... View full abstract»

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  • Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS

    Publication Year: 2014, Page(s):13 - 16
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (425 KB) | HTML iconHTML

    Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Zin) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) an... View full abstract»

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  • Integrated RF transformer and power combiner design in 150nm CMOS process

    Publication Year: 2014, Page(s):17 - 20
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (234 KB) | HTML iconHTML

    An integrated passive power combiner is discussed and characterized based on test structure fabricated in a 150 nm LFoundry CMOS process. The power combiner uses differentially driven coupled transformers as a basic building block. We discuss first the constraint driven sythesis of the transformer itself and the device modeling with a rapid RLCk model extractor. Helic's electronic design automatio... View full abstract»

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  • A 5GHz/60GHz receiver front-end IC in 90nm CMOS technology

    Publication Year: 2014, Page(s):21 - 24
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (399 KB) | HTML iconHTML

    This paper presents a multi-band receiver front-end IC in 90nm CMOS technology. The receiver front-end IC is switchable between a 5GHz front-end and a 60GHz front-end. The architecture of the receiver front-end IC is a direct conversion in 5GHz band and a superheterodyne in 60GHz band. For the miniaturization, the 5GHz and 60GHz front-ends share a variable gain amplifier for adjustment of power le... View full abstract»

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  • 9mW 6Gbps bi-directional 85–90GHz transceiver in 65nm CMOS

    Publication Year: 2014, Page(s):25 - 28
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (913 KB) | HTML iconHTML

    A Colpitts mm-wave VCO is used for modulating and de-modulating high data rates using two modes of operation, enabling multi-Gbps transceiver with small size and low power. As a VCO 4 GHz tuning range is achieved with a peak output power of +5 dBm at 87 GHz and a phase noise of -93 dBc/Hz at 1 MHz offset. Gate bias modulation achieves up to 6 Gbps ASK modulation with only 9 mW power consumption. I... View full abstract»

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  • 240 GHz transmitter and receiver for 3D imaging system in SiGe BiCMOS technology

    Publication Year: 2014, Page(s):29 - 32
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (601 KB) | HTML iconHTML

    240 GHz transmitter and receiver ICs for a 3D imaging system operating are presented. The transmitter exhibits 0.75 dBm output power at 220 GHz, and features a bandwidth of more than 60 GHz while consuming 55 mA from 3 V supply. The receiver features 14 dB of conversion gain at 220 GHz while consuming 81 mA from a 3 V supply. The circuits were implemented in 0.13μm SiGe:C BiCMOS technology with f<... View full abstract»

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  • Design of a 2 Gb/s transceiver at 60 GHz with integrated antenna in bulk CMOS technology

    Publication Year: 2014, Page(s):33 - 36
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (205 KB) | HTML iconHTML

    This work presents the design of a 60 GHz OOK transceiver, with on-chip integrated antenna, for multi Gbit short-range wireless communication. A 65 nm bulk CMOS technology has been selected as target to prove that high-speed fully-integrated RF transceivers can be realized also with low cost digital technologies, suited for wireless consumer applications. The OOK modulation scheme allows for low c... View full abstract»

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  • A fully integrated 8-channel wide-band receiver for Ku-band dual-polarization phased array in SiGe BiCMOS

    Publication Year: 2014, Page(s):37 - 40
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (910 KB) | HTML iconHTML

    A Ku-band fully-integrated 8-channel phased-array receiver with 2GHz wide IF-bandwidth on a 3.8*4mm die is presented. The receiver has extensive processing at IF-level, like polarization discrimination, but it consumes only 132mW per channel. Each channel has 40dB gain and a IP1dB of -66dBm. The wide bandwidth calls for constant group-delay implementations in the IF chain. A novel bipolar implemen... View full abstract»

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  • A wideband 65nm CMOS transformer-coupled power amplifier for WiGig applications

    Publication Year: 2014, Page(s):41 - 44
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (782 KB) | HTML iconHTML

    This paper describes a compact two-stage pseudodifferential cascode power amplifier implemented in 7-metal-layer 65nm Low-Power CMOS process. A cascode topology is associated with wideband matching networks which combine integrated transformers and slow-wave transmission lines. The power amplifier achieves 26GHz of bandwidth from 48GHz to 74GHz, with a 1dB ripple flat gain between 50GHz and 70GHz.... View full abstract»

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