IEEE Transactions on Semiconductor Technology Modeling and Simulation

: 1996

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  • Analysis of electron transport properties in unstrained and strained Si1−xGexalloys

    Publication Year: 1996, Page(s):1 - 37
    Request permission for reuse | Click to expandAbstract | PDF file iconPDF (14338 KB)

    A comprehensive and thorough investigation of electron transport properties in unstrained and strained Si1−xGexalloys is presented. Ohmic majority and minority drift mobilities, effective densities of states and saturation drift velocities are reported up to Ge contents of x = 0.3. The mobility model is verified by measurements of the in-plane majority drift mobility for vari... View full abstract»

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Aims & Scope

This Transaction ceased production in 1996.

Full Aims & Scope