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Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date 5-7 Oct. 1998

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  • ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

    Publication Year: 1998
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    Freely Available from IEEE
  • MOVPE growth and characterisation of (Al,Ga)N layers

    Publication Year: 1998 , Page(s): 59 - 62
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    The group III nitrides are promising materials for optoelectronic devices high temperature electronics and high power microwave devices. At the moment, MOVPE (Metalorganic Vapour Phase Epitaxy) seems to be the most successful and the most promising method and /spl alpha/ sapphire is believed to be the best substrate for GaN deposition. The paper presents the achievements in (Al,Ga)N deposition at the Institute of Microsystem Technology, Wroclaw University of Technology. The correlation between structural, optical and electrical properties of thick undoped high temperature GaN buffer layer and thin undoped AlGaN spacer layer grown on it are shown and discussed. View full abstract»

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  • SiO/sub 2/ film formation and electrical properties of InP MIS structures

    Publication Year: 1998 , Page(s): 163 - 166
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    The purpose of this work is to investigate the influence of the SiO2 film deposition conditions on the charge properties of the Me-SiO2-n-lnP (200) MIS structures. SiO2 films have been formed on n-type InP (100) substrates (N=1016-10 17 cm-3 by chemical vapor deposition (CVD) using pyrolysis of tetraethoxysilane (TEOS) in an O2/N2 flow at 300-350°C. The deposition rate was 10-200 nm/h. It is shown that the effective surface state charge Qss and hysteresis of C-V characteristics in the MIS structures to a large extent depends on the SiO2 film deposition rate. In the MIS structures treated in the (NH4)2Sx solution the lowest Q ss (⩽10911) cm-2), Nit(~10-2 cm-2 eV-1) and C-V hysteresis (<0.3 V) were obtained at the dox=70 nm and the 130 nm/h deposition rate View full abstract»

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  • Author index

    Publication Year: 1998 , Page(s): 371 - 374
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    Freely Available from IEEE
  • Effect of pressure treatment on electrical properties of hydrogen-doped silicon

    Publication Year: 1998 , Page(s): 47 - 50
    Cited by:  Patents (1)
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    Annealing of CZ-Si at 450°C under enhanced argon pressure (HP) results in significant increase of electron concentration. FTIR measurements confirmed that enhanced double thermal donors (TDD) generation in CZ-Si is responsible for this phenomenon. In hydrogenated (etched in hydrogen plasma or implanted by hydrogen) silicon samples, annealed at 450°C-HP, it was slated marked enhancement of the TDD generation rate during first two hours of annealing. It can mean that hydrogen acts as catalyst in formation of small oxygen clusters at HP. The role of HP in enhancement of TDD creation during annealing at 450°C was stated to be of primary importance also for hydrogen doped silicon View full abstract»

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  • Photo-electrical properties of thin ZnO:Al films

    Publication Year: 1998 , Page(s): 67 - 70
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    Photo-electrical properties of ZnO and ZnO:Al thin film prepared by rf sputtering are investigated. The prepared samples exhibit a very wide change of sheet resistance within ten orders of magnitude depending on preparation procedure. A low value of doping independent mobility has been observed. An optical band gap shift towards higher energies is presented View full abstract»

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  • Influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes

    Publication Year: 1998 , Page(s): 141 - 144
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    The Poisson equation together with the drift-diffusion equations have been used to simulate both I-V and C-V characteristic of inhomogeneous Schottky diodes. It is shown that the I-V and C-V curves and extracted apparent Schottky diode parameters depend only slightly if at all, on a lateral correlation between the single barrier patches for larger dimension of patches. Very small differences were found between the currents flowing through the diode with large and nanosize inhomogeneities View full abstract»

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  • Numerical investigations of the large signal dynamic admittance of the transferred electron devices

    Publication Year: 1998 , Page(s): 191 - 194
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    In the paper results of the full characterization of the Gunn diode's frequency dependent dynamic admittance have been presented. The base large signal simulation have been performed for the X-band Gunn device, using the drift and diffusion model of electron transport. The presented results clear up many phenomena appearing in the oscillators based on Gunn diodes. Because the physical mechanism of the operation of TED's is similar in a very wide-frequency band, the X-band characterization is useful for planning of more complicated simulations of TED's in the frequency bands above 40 GHz View full abstract»

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  • New method of surface barrier structures characterization using plasmon-polariton photoeffect

    Publication Year: 1998 , Page(s): 211 - 214
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    The new method of characterization of Schottky barrier surface polariton (SP waves based photodetectors is presented and its very promising ability of optimization of their parameters (diffusion length, Schottky barrier height electron and hole emission rates and surface recombination velocity, etc.) is shown View full abstract»

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  • Transition between coherent to incoherent superlattices transport

    Publication Year: 1998 , Page(s): 267 - 274
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    Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a three terminal transistor type devices an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as function of the injector energy. Resonance in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice. A significant decreased of the miniband transmission is observed with increasing electric field across the superlattice, which is attributed to the the quenching of coherent transport. For longer superlattices an asymmetry between positive and negative bias is found which is assigned to the transition between coherent and incoherent transport View full abstract»

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  • Simulation and analysis of the electromagnetic behavior of 3D-MCM carried structures by means of investigations on symmetric folded microstrip filters

    Publication Year: 1998 , Page(s): 121 - 124
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    Simulation and analysis of the electromagnetic behavior of 3D-MCM (multichip module) carrier structures by means of investigation on symmetric folded microstrip filters realised on their basis is proposed in the present paper. The technology for building multilayer high-speed MCM structures, based on Al carriers enables the development of multiple and multilayered interconnections combined with thin film integrated passive components-resistors and MIM capacitors-embedded in the whole structure. In order to study these material systems of interconnections, constructions of multilevel folded symmetric microstrip filters for 1.7 GHz were developed. An electromagnetic simulation of the various filter constructions was performed. RF measurements by means of a vector analyzer were carried out and compared with the simulated characteristics. The obtained measurement and simulation results were used to study successfully the electromagnetic characteristic as well as the parasitic high-frequency effect of interconnection, in order to achieve a reliable practical realisation of high rate production quality View full abstract»

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  • Resistivity anisotropy and surface morphology in ordered Inx Ga1-xP grown at 640°C

    Publication Year: 1998 , Page(s): 23 - 26
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    We have studied the resistivity anisotropy of ordered Inx Ga1-xP epitaxial layers grown at 640°C. Increasing the lattice mismatch leads to an increase in the resistivity anisotropy, which is higher than two orders of magnitude. We suppose that this effect is caused by additional scattering at the boundaries of ordered domains View full abstract»

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  • Ultrahigh Al Schottky barrier to p-Si

    Publication Year: 1998 , Page(s): 83 - 86
    Cited by:  Papers (1)
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    The possibility of barrier height enhancement of Schottky junction on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si View full abstract»

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  • Mid-infrared LEDs using InAs0.71Sb0.29/InAs/Al0.25In0.75 As/InAs strained-layer superlattice active layers

    Publication Year: 1998 , Page(s): 287 - 290
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    The use of strained-layer superlattice is a well-established technique to lower Auger recombination in the active layer of mid-IR LEDs and laser. We have shown by temperature-dependent photoluminescence experiments the Auger recombination can be further reduced by incorporating InAs spacer layer inside symmetrically-strained InAsSb/InAlAs superlattices and that the thickness of the spacer is critical for the improved operation. The layer were grown by molecular beam epitaxy on (001) InAs substrates. The crystalline quality of the grown superlattices is demonstrated by means of transmission electron microscopy, atomic force microscopy and X-ray diffraction measurement View full abstract»

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  • Pattern formation on the compound semiconductor surface after selective electrochemical etching

    Publication Year: 1998 , Page(s): 39 - 42
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    In this paper we investigate the pattern formation of the GaAs and InP surface after electrochemical layer removal by different aqueous electrolytes. The investigation of the surface was carried out using SEM. Under certain etching conditions the surface morphology showed fractal behaviour. The fractal properties were established using the box counting method. The pictures of surface patterns were digitised and analysed using high resolution bitmap. The fractal dimension depends the semiconductor material electrolyte and condition of etching too View full abstract»

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  • Thin film microelectrodes applicable in the study of red blood cell sedimentation by impedance method

    Publication Year: 1998 , Page(s): 259 - 262
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    Thin-film interdigitated array of microelectrodes was used for study of the red blood cell sedimentation by impedance method. An improvement of that method is presented by the determination of a change of impedance rate with time. That dynamic parameter is different for the blood of healthy and cancer patients View full abstract»

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  • On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect

    Publication Year: 1998 , Page(s): 27 - 30
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    Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal due to inherent instability of such devices against charge fluctuations View full abstract»

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  • Semiconductor flow and direction monitoring sensor systems

    Publication Year: 1998 , Page(s): 343 - 346
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    The paper describes behaviour of a anemometric sensor system for wind velocity and direction measurement. The system operates without using of movable elements. There have been used thermistors for temperature measurement. Behavior of the digital part and the calculations are performed by a microcomputer. The measured data of wind flow velocity and direction are visualized digitally using two displays View full abstract»

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  • Pressure sensors on base of bipolar silicon strain sensitive transistors

    Publication Year: 1998 , Page(s): 251 - 254
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    Theoretical and experimental studies were made of characteristics of bipolar strain sensitive transistors (tensotransistors). We describe the constructions and operating principles of tensotransistors, report theoretical calculation aimed to optimise the parameters of devices relative to higher sensitivity and energy consumption View full abstract»

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  • New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices

    Publication Year: 1998 , Page(s): 279 - 282
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    We report on a new all-optical pump-and-probe technique for the investigation of the fast in-plane ambipolar diffusion process in n-i-p-i doping superlattices. This new technique allows not only the determination of the ambipolar diffusion coefficient but also the spatially resolved investigation of the stationary distribution of the optically induced excess carriers. In our n-i-p-i sample we have measured an ambipolar diffusion coefficient in the range of 104 cm2/s View full abstract»

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  • GaInAs/GaAs strained QWs prepared by LP MOVPE on misoriented substrates

    Publication Year: 1998 , Page(s): 159 - 162
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    Luminescence properties of strained Ga1-xlnxAs/GaAs multiple quantum wells of different thickness and In content, prepared by metal organic vapour phase epitaxy were studied. The influence of composition and substrate orientation on the shape of luminescence spectra was investigated. The experimental results were fitted by model-solid theory and with adjusted Q parameter View full abstract»

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  • Design of a tunable RCE photodetector for the 1550 nm wavelength range

    Publication Year: 1998 , Page(s): 117 - 120
    Cited by:  Patents (3)
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    We present the design of a InGaAs/InP tunable RCE photodetector for the wavelength of 1550 nm. A coupled resonator with two Bragg mirrors has been used to get a broader resonator mode, so that the whole tuning range is enhanced by the cavity. The conditions for the efficient operation of a highly selective tunable photodetector are discussed View full abstract»

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  • Bi- and Yb-doped GaAs-AlGaAs low-threshold laser heterostructures with quantum well active layers

    Publication Year: 1998 , Page(s): 79 - 82
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    This work considers the experimental and calculated results concerning the LPE crystallization of GaAs, AlGaAs layers (10-30 nm) from Ga-Bi-melts at the temperature of 500-700°C. Bi being an isovalent impurity decreased the growth rate of GaAs layer to 0.01-0.1 nm/s and, at the same time, it deletes background impurities from a melt. When active layers of AlxGa1-XAs heterolaser (x=0.02-0.15) were doped by Yb and Bi it has been revealed that the conductivity inversion point is shifted towards lower concentration of Yb in a melt. Thus the low temperature LPE method and doping an active layer (Bi) allow the fabrication of low threshold injection semiconductor heterolaser View full abstract»

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  • Microelectronics MIS gas-sensitive structures with enhanced stability

    Publication Year: 1998 , Page(s): 347 - 350
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    The stability of microelectronics Metal-lnsulator-Silicon (MIS) gas-sensitive structures with Pd and Pd/Cu composite metal layers have been studied and compared. The metal films were obtained by magnetron deposition in Ar plasma. Detailed investigations of surface morphology and chemical composition of the layers by SEM and AES depth profiling have been performed too. A shift of the flat band voltage (ΔVjs), obtained from the measurements of capacitance voltage characteristics was used as a response of a MIS structure on the supplying of gas pulses. Such gases as hydrogen, humidity, and air (oxygen) were tested by the sensors. The kinetics of the responses was studied experimentally and compared with the results of a computer simulation. To investigate the stability of the MIS structures they were subjected to an accelerated artificial aging by annealing in air at 100-250°C during 0.3-3 h. It was found that MIS sensors with Pd/Cu composite layer demonstrate higher sensitivity to hydrogen and higher stability under artificial aging than similar structure with Pd layer only View full abstract»

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  • Microwave properties of the MSM photodetectors with 2-DEG

    Publication Year: 1998 , Page(s): 295 - 298
    Cited by:  Papers (3)
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    MSM photodetectors are investigated by measurement and modelling in microwave region. Cut-off frequencies are compared for different structures and layouts. Significant improvement of 2-DEG MSM's frequency response on low operating voltages was found View full abstract»

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