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Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date 5-7 Oct. 1998

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  • ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

    Publication Year: 1998
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    Freely Available from IEEE
  • MOVPE growth and characterisation of (Al,Ga)N layers

    Publication Year: 1998 , Page(s): 59 - 62
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    The group III nitrides are promising materials for optoelectronic devices high temperature electronics and high power microwave devices. At the moment, MOVPE (Metalorganic Vapour Phase Epitaxy) seems to be the most successful and the most promising method and /spl alpha/ sapphire is believed to be the best substrate for GaN deposition. The paper presents the achievements in (Al,Ga)N deposition at the Institute of Microsystem Technology, Wroclaw University of Technology. The correlation between structural, optical and electrical properties of thick undoped high temperature GaN buffer layer and thin undoped AlGaN spacer layer grown on it are shown and discussed. View full abstract»

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  • SiO/sub 2/ film formation and electrical properties of InP MIS structures

    Publication Year: 1998 , Page(s): 163 - 166
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    The purpose of this work is to investigate the influence of the SiO2 film deposition conditions on the charge properties of the Me-SiO2-n-lnP (200) MIS structures. SiO2 films have been formed on n-type InP (100) substrates (N=1016-10 17 cm-3 by chemical vapor deposition (CVD) using pyrolysis of tetraethoxysilane (TEOS) in an O2/N2 flow at 300-350°C. The deposition rate was 10-200 nm/h. It is shown that the effective surface state charge Qss and hysteresis of C-V characteristics in the MIS structures to a large extent depends on the SiO2 film deposition rate. In the MIS structures treated in the (NH4)2Sx solution the lowest Q ss (⩽10911) cm-2), Nit(~10-2 cm-2 eV-1) and C-V hysteresis (<0.3 V) were obtained at the dox=70 nm and the 130 nm/h deposition rate View full abstract»

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  • Author index

    Publication Year: 1998 , Page(s): 371 - 374
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    Freely Available from IEEE
  • Al-DyxOy-n-InP (100) structure preparation and properties

    Publication Year: 1998 , Page(s): 91 - 94
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    Al-DyxOy-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy xOy films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O2 environment (I) or in the vacuum (II) followed by thermal oxidation at 330-350°C in a dry oxygen stream. It follows for analysis of the experiments that the breakdown field in the Al-DyxOy(I)-n-InP structure Ebr is 2.5×106 V/cm, the effective positive surface charge Qss is ~3×1011 cm-2 and the surface state density Nit is 5×1011 cm-2 eV-1. The C-V characteristics hysteresis is of injection type with the magnitude less than 0.3 V. The Al-DyxOy (II)-n-InP structure has surface charge magnitude Qss about ±1×1011 cm-2 surface state density Nit~1×10 11 cm-2 eV-1, ionic type hysteresis 1-3 V and Ebr~5×106 View full abstract»

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  • Modeling and simulation of surface generation-recombination in Schottky diodes

    Publication Year: 1998 , Page(s): 133 - 136
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    The properties of the metal-semiconductor interface, which plays a dominant role in the charge transport through Schottky structures, are still not understood satisfactorily. The extraction of parameters from the measured I-V characteristics based on the classical thermionic emission-diffusion theory usually fails, especially at lower temperatures. We present a new more complex physical model which includes also the effects of surface generation-recombination and tunneling of free carriers via surface deep traps. Then the correlation of simulation experimental I-V characteristic is obtained in a much wider range of applied voltages and temperatures View full abstract»

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  • High-speed heterostructure photodetectors characterisation

    Publication Year: 1998 , Page(s): 99 - 102
    Cited by:  Papers (1)
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    A measurement set-up for high-speed photodetector properties investigation in frequency domain up to 20 GHz is described. Using this set-up, heterostructure photodetectors were characterised employing microwave reflection coefficient and/or optoelectronic transmission coefficient measurements. The equivalent circuit of the photodetector device was identified from microwave reflection coefficient measurements. Transmission measurements and simulations of photodetector were performed and compared in time and/or frequency domain View full abstract»

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  • Numerical investigations of the large signal dynamic admittance of the transferred electron devices

    Publication Year: 1998 , Page(s): 191 - 194
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    In the paper results of the full characterization of the Gunn diode's frequency dependent dynamic admittance have been presented. The base large signal simulation have been performed for the X-band Gunn device, using the drift and diffusion model of electron transport. The presented results clear up many phenomena appearing in the oscillators based on Gunn diodes. Because the physical mechanism of the operation of TED's is similar in a very wide-frequency band, the X-band characterization is useful for planning of more complicated simulations of TED's in the frequency bands above 40 GHz View full abstract»

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  • Influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes

    Publication Year: 1998 , Page(s): 141 - 144
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    The Poisson equation together with the drift-diffusion equations have been used to simulate both I-V and C-V characteristic of inhomogeneous Schottky diodes. It is shown that the I-V and C-V curves and extracted apparent Schottky diode parameters depend only slightly if at all, on a lateral correlation between the single barrier patches for larger dimension of patches. Very small differences were found between the currents flowing through the diode with large and nanosize inhomogeneities View full abstract»

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  • Macrostress formation in thin films and its investigation by X-ray diffraction

    Publication Year: 1998 , Page(s): 227 - 230
    Cited by:  Papers (1)
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    Elastic stresses and strains are almost always present in thin films deposited on substrates. In the majority of cases these stresses are residual stresses, introduced into the system during deposition or subsequent processing and they me mostly biaxial at the thin film substrate interface. Two significant reasons of macrostress formation in thin films can be distinguished thermal and/or epitaxial mismatch between the thin film and substrate thermal coefficients and lattice parameters View full abstract»

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  • Semiconductor flow and direction monitoring sensor systems

    Publication Year: 1998 , Page(s): 343 - 346
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    The paper describes behaviour of a anemometric sensor system for wind velocity and direction measurement. The system operates without using of movable elements. There have been used thermistors for temperature measurement. Behavior of the digital part and the calculations are performed by a microcomputer. The measured data of wind flow velocity and direction are visualized digitally using two displays View full abstract»

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  • Resistivity anisotropy and surface morphology in ordered Inx Ga1-xP grown at 640°C

    Publication Year: 1998 , Page(s): 23 - 26
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    We have studied the resistivity anisotropy of ordered Inx Ga1-xP epitaxial layers grown at 640°C. Increasing the lattice mismatch leads to an increase in the resistivity anisotropy, which is higher than two orders of magnitude. We suppose that this effect is caused by additional scattering at the boundaries of ordered domains View full abstract»

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  • Structural and electrical properties of amorphous nitrogen doped SiC thin films annealed by pulsed electron beam

    Publication Year: 1998 , Page(s): 179 - 182
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    The properties of nitrogen-doped amorphous SiC films irradiated by pulsed electron beams are presented. The I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates were investigated. The results showed that the film conductivity increased by about two orders of magnitude as nitrogen fraction was increased from 10 at% to 14 at%. The film conductivity was enhanced by about one order of magnitude as a result of two-fold increase of pulsed electron beam irradiation View full abstract»

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  • Radiation effects in surface-barrier Ir-Al/n-GaAs structures

    Publication Year: 1998 , Page(s): 231 - 234
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    The changes in electrical properties extracted from I-V and C-V measurements, of Ir-Al/n-GaAs barrier contacts caused by gamma-radiation were studied. Non-monotonic dose dependences of the Schottky barrier height, ideality factor, surface state density, and relative thickness of the interfacial layer were observed. Such a non-monotonic behaviour might be attributed to radiation-induced gettering of structural defects and to the mass transfer in both the sub-surface layer and inter-phase boundary View full abstract»

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  • Thin film microelectrodes applicable in the study of red blood cell sedimentation by impedance method

    Publication Year: 1998 , Page(s): 259 - 262
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    Thin-film interdigitated array of microelectrodes was used for study of the red blood cell sedimentation by impedance method. An improvement of that method is presented by the determination of a change of impedance rate with time. That dynamic parameter is different for the blood of healthy and cancer patients View full abstract»

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  • Persistent behaviour of 2DEG in single δ-layers

    Publication Year: 1998 , Page(s): 219 - 222
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    The persistent light-induced changes in InP sulphur doped single δ-layers were investigated experimentally by the magnetotransport methods. It was shown that in these highly disordered two-dimensional structures the observed behaviour is controlled by the sulphur-related DX-centres while the Fermi level of the sample as a whole is stabilised by the substrate background View full abstract»

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  • Band gap states in a-SiGe:H alloys determined from charge DLTS experiments

    Publication Year: 1998 , Page(s): 19 - 22
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    We used the charge deep level transient spectroscopy (DLTS) to determine the midgap density of states (DOS) distribution in undoped a-SiGe:H layers. By applying a bias voltage of -5 V and 0 V on the MIS structures and annealing them 10 minutes at equilibrium temperature of 490 K we moved the position of the Fermi level, EF, in the a-SiGe:H material, which has led to the different equilibrium distributions of the DOS. In case of applying -5 V, which moves EF towards the valence band edge, the DOS distribution is dominated by a peak at 0.61 eV below the conduction band edge and in case of 0 V, when EF is around midgap, a peak in the DOS distribution is formed at 0.80 eV. In both cases light soaking leads to an increase in the DOS and a formation of a subband at 0.90 eV View full abstract»

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  • Electroluminescence investigation of GaAs/AlAs monolayer multiquantum well structures

    Publication Year: 1998 , Page(s): 275 - 278
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    We present experimental studies of electroluminescence in GaAs/AlAs type II monolayer multiquantum well (MQW) heterostructures embedded in InAlP undoped confinement layer grown by low pressure MOVPE. The p-n junction in structure was created by local diffusion of Zn from conductive ZnO film. The phonon assisted optical processes are observed at room temperature where indirect optical transitions at 545 and 720 nm are present in weak electroluminescence spectra. Intense optical transition at 572 nm prevail at the low temperature (77 K) which corresponds to type I optical transition. Type II optical transition at 688 nm in GaAs/AlAs MQW structure shows low intensity. The electroluminescence of type I optical transitions in type II monolayer GaAs/AlAs MQW structures is reported for the first time View full abstract»

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  • Surface-oriented and bulk GaAs and InP detectors for X-ray diagnostics of laser plasmas

    Publication Year: 1998 , Page(s): 187 - 190
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    Bulk and surface-oriented GaAs and InP photoconductive detectors were fabricated for laser-plasma diagnostic purposes. Current-voltage curves, pulse-height spectra measurements using light pulses and α-particles as well as pulses from different lasers are used to compare the defectors. Preliminary results using X-ray pulses from laser plasmas are presented. InP detectors were of higher performance View full abstract»

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  • Manganese-based magnetic compounds grown on III-V semiconductors: growth technique, magnetic properties, and applications

    Publication Year: 1998 , Page(s): 145 - 154
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    In this paper we firstly discuss briefly developments in the field of ferromagnetic/semiconductor hybrid devices. We will emphasize the potential of the use of epitaxial technique to tailor the magnetic properties and to improve potential device characteristics. We will describe further the advantage of Molecular Beam Epitaxy (MBE) to produce excellent heterostructure interfaces between ferromagnetic and semiconductor layers. As a prime example of how magnetic properties can be controlled by MBE we describe our recent results on the epitaxy of ferromagnetic Mn2Sb on GaAs. We show the substrate temperature dependence of the crystallographic and magnetic properties of (001) Mn2Sb films grown on (001) GaAs substrates. The Mn 2Sb epitaxial film grown at 150°C shows high quality and single crystallinity of the film with an automatically flat Mn2 Sb/GaAs heterointerface. The small coercive field and the large magneto-optical Kerr effect are very promising for ferromagnetic/semiconductor hybrid devices. The correlation between the crystallographic and magnetic properties is discussed View full abstract»

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  • Affinity biosensors based on thin organic films on a metal microsystem support

    Publication Year: 1998 , Page(s): 367 - 370
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    Protein films (PF) on gold microsystem support were used for construction affinity biosensor for detecting human IgE. Antigen Q-SwaHU/IgE was bound with cysteamine or with cystramine-bovine serum albumin (BSA) complex by means of glutaraldehyde and immobilized to the thin gold support working electrode by means of chemisorption. The interaction of IgE with affinity biosensor has been detected by means of conductance. Addition of IgE to the electrolyte contained biosensor with BSA resulted in decrease membrane conductance, which that with BSA resulted in increase of sensor conductance in logarithm shape. in both cases the sensitivity of affinity biosensor was nM level. The mechanisms of biosensor response are discussed View full abstract»

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  • Study of bimetallic effect in a GaAs cantilever beam of power sensor microsystem

    Publication Year: 1998 , Page(s): 331 - 334
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    A bimetallic effect in a 2-μm-thick GaAs cantilever beam of power sensor microsystem (PSM) is studied using both the microscopic laser optical interferometry and laser optical reflectance measurement. The cantilever beam deflections induced by the different thermal expansion of the GaAs cantilever layer and the top device metallic leads are sensed at different power dissipations in the PSM heater. The key transfer characteristics of the PSM are found. The cantilever bimetallic effect is also considered to be used for the electrical power sensing View full abstract»

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  • Investigation of semiconductor structures through capacitance techniques

    Publication Year: 1998 , Page(s): 15 - 18
    Cited by:  Papers (1)
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    Precise and fast computer-aided measurements, parameters extraction and suitable data visualisation are nowadays necessary for many applications as development, production and quality control of semiconductor devices. In order to investigate such devices as metal-insulator-semiconductor structures, and devices with p-n junction or another rectifying contact an apparatus for high frequency capacitance versus voltage and for capacitance versus time techniques has been designed and constructed by means of these methods one can determine critical parameter for device characterisation View full abstract»

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  • Effect of pressure treatment on electrical properties of hydrogen-doped silicon

    Publication Year: 1998 , Page(s): 47 - 50
    Cited by:  Patents (1)
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    Annealing of CZ-Si at 450°C under enhanced argon pressure (HP) results in significant increase of electron concentration. FTIR measurements confirmed that enhanced double thermal donors (TDD) generation in CZ-Si is responsible for this phenomenon. In hydrogenated (etched in hydrogen plasma or implanted by hydrogen) silicon samples, annealed at 450°C-HP, it was slated marked enhancement of the TDD generation rate during first two hours of annealing. It can mean that hydrogen acts as catalyst in formation of small oxygen clusters at HP. The role of HP in enhancement of TDD creation during annealing at 450°C was stated to be of primary importance also for hydrogen doped silicon View full abstract»

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  • Monte Carlo simulations of the transport of sputtered particles

    Publication Year: 1998 , Page(s): 63 - 66
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    A model for Monte Carlo calculation of the transport of sputtered particles is presented which allows to estimate the density of sputtered material in the gas phase of a low pressure DC magnetron discharge. Simulation of DC magnetron sputtering of Cu in 0.1 Pa of Ar using an average target power density 2 W/cm2 shows that Cu concentration is below 1% in most of the discharge volume. The influence of the process parameters on the relative Cu density is discussed View full abstract»

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