IEEE Journal of Selected Topics in Quantum Electronics

Issue 2 • March-April 2018

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• Frontcover

Publication Year: 2018, Article Sequence Number: 0000501
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• IEEE Journal of Selected Topics in Quantum Electronics

Publication Year: 2018, Article Sequence Number: 0000601
| PDF (326 KB)
• IEEE Journal of Selected Topics in Quantum Electronics information for authors

Publication Year: 2018, Article Sequence Number: 0000701
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• IEEE Journal of Selected Topics in Quantum Electronics Topic Codes and Topics

Publication Year: 2018, Article Sequence Number: 0000801
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Publication Year: 2018, Article Sequence Number: 0100203
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• Editorial

Publication Year: 2018, Article Sequence Number: 0200301
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• Guest Editorial: Introduction to the Special Issue on Optical Detectors

Publication Year: 2018, Article Sequence Number: 0200403
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• Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers

Publication Year: 2018, Article Sequence Number: 1900105
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In this paper, the study of the photoconductivity in self-assembled InAs/GaAs quantum dot photoconductive antenna in the wavelength region between 1140 nm and 1250 nm at temperatures ranging from 13 to 400 K is reported. These antennas are aimed to work in conjunction with quantum dot semiconductor lasers to effectively generate pulsed and continuous wave terahertz radiation. For the efficient ope... View full abstract»

• Laterally Biased Quantum-Well Infrared Photodetectors Operating at Room Temperature With Low Dark Currents

Publication Year: 2018, Article Sequence Number: 1900206
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The technology of quantum-well infrared photodetectors has been used to fabricate focal plane arrays as the active element of infrared cameras. These arrays must be cooled down to 77 K due to the large dark current that they exhibit at higher operating temperatures. Among the different alternatives proposed to overcome this drawback, the lateral conduction scheme has been successfully employed in ... View full abstract»

• Enhanced Absorption Due to Formation of Quasi-Bound States in Type-II Coupled Quantum Rings

Publication Year: 2018, Article Sequence Number: 1900307
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The absorption of type-II nanostructures is often weaker than type-I counterpart due to spatially indirect optical transitions. This phenomenon limits the application of type-II nanostructures in photon detections. In this paper, we show that with proper arrangements of conduction barriers, the formation of quasi-bound states can significantly boost up the absorption of type-II coupled quantum rin... View full abstract»

• Filter-Free Narrowband Photodetectors Employing Colloidal Quantum Dots

Publication Year: 2018, Article Sequence Number: 1900406
| | PDF (546 KB)

Tuning the electronic bandgap of quantum dots via the quantum size-effect enables the tailored spectral response of quantum dot photodetectors, light emitting diodes, and solar cells. Chemically synthesized colloidal quantum dot (CQD) provides an option to produce such quantum material in an inexpensive way. Here, we propose an approach to fabricate filter-free narrowband photodetectors in near-in... View full abstract»

• Thin $text{Al}_{mathbf{1{-}}{boldsymbol x}}$ Ga$_{boldsymbol{x}}$As $_{mathbf{0.56}}$Sb $_{mathbf{0.44}}$ Diodes With Low Excess Noise

Publication Year: 2018, Article Sequence Number: 3800105
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Thin avalanche layers have been adopted to achieve low excess noise and high-gain bandwidth products in InP and InAlAs avalanche photodiodes. In this paper, we report the excess noise characterization in a series of Al1-xGaxAs0.56 Sb0.44 (x = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm. These alloys, lattice matched to InP, sh... View full abstract»

• Top-Illuminated In0.52Al0.48As-Based Avalanche Photodiode With Dual Charge Layers for High-Speed and Low Dark Current Performances

Publication Year: 2018, Article Sequence Number: 3800208
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A novel type of top-illuminated, etch-mesa In0.52Al0.48As-based avalanche photodiode (APD) with high-speed (>25 Gb/s), low dark current performance has been demonstrated. The 25G APD device is composed of n-side down design with the In0.52Al0.48As multiplication (M) layer buried at the bottom to avoid the issues of surface breakdown and complex guard ring structure. In addition, we demonstrate ... View full abstract»

• Noise Characterization of Geiger-Mode 4H-SiC Avalanche Photodiodes for Ultraviolet Single-Photon Detection

Publication Year: 2018, Article Sequence Number: 3800305
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We present here the noise properties of the 4H-SiC avalanche photodiodes (APD) operated in Geiger mode. After-pulse events together with the dark count rate were measured at different temperatures. We found that at a certain bias voltage, the after-pulse probability of the 4H-SiC APD was dependent on the incident photon flux. This interesting observation may be useful to build a photon-number reso... View full abstract»

• Avalanche Photodiodes Based on the AlInAsSb Materials System

Publication Year: 2018, Article Sequence Number: 3800407
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We report avalanche photodiodes (APDs) fabricated from high-aluminum-content AlxIn1-xAsySb1-y lattice matched to GaSb that is grown within the miscibility gap using a digital alloy approach. The material was initially characterized through a series of AlxIn1-x AsySb1-y (x = 0.3, 0.4, 0.5, 0.6, 0.7) p-i-n struct... View full abstract»

• Large-Format Geiger-Mode Avalanche Photodiode Arrays and Readout Circuits

Publication Year: 2018, Article Sequence Number: 3800510
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Over the past 20 years, we have developed arrays of custom-fabricated silicon and InP Geiger-mode avalanche photodiode arrays, CMOS readout circuits to digitally count or time stamp single-photon detection events, and techniques to integrate these two components to make back-illuminated solid-state image sensors for lidar, optical communications, and passive imaging. Starting with 4 × 4 arr... View full abstract»

• High Efficiency, Ultra-High-Density Silicon Photomultipliers

Publication Year: 2018, Article Sequence Number: 3800608
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Silicon photomultipliers (SiPMs) are arrays of many single-photon avalanche diodes (SPADs), all connected in parallel. Each SPAD is sensitive to a single photon. The SiPM output is proportional to the number of detected photons. These sensors are becoming more and more popular in different applications and they have been significantly improved over last years, decreasing the noise, increasing the ... View full abstract»

• 32 × 32 CMOS SPAD Imager for Gated Imaging, Photon Timing, and Photon Coincidence

Publication Year: 2018, Article Sequence Number: 3800706
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We present the design and simulations of a single-photon sensitive imager based on single photon avalanche diodes (SPADs) with an innovative pixel architecture that includes four separate SPADs with independent active time-gating and quenching circuit, a shared time-to-digital converter (TDC) with 50-ps resolution, four independent photon counters, and multiple operation modes. The TDC is driven b... View full abstract»

• Responsivity-Bandwidth Limit of Avalanche Photodiodes: Toward Future Ethernet Systems

Publication Year: 2018, Article Sequence Number: 3800811
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Design of avalanche photodiodes (APDs) and their limiting factors on operating speed and responsivity are discussed with consideration of their application to optical receivers for optical-fiber communications systems. Each type of APD, with variable structures such as vertical illumination and waveguides, has inherent performance tradeoffs related to responsivity, carrier transit time, capacitanc... View full abstract»

• Germanium on Silicon Avalanche Photodiode

Publication Year: 2018, Article Sequence Number: 3800911
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Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on silicon avalanche photodiodes (Ge/Si APDs) have attracted tremendous attention due to their the properties of high performance and low cost. The sensitivity of 10Gb/s APD reached -29.5dBm at 1550 nm with the bit error rate of 1 �... View full abstract»

• Performance Optimization and Improvement of Silicon Avalanche Photodetectors in Standard CMOS Technology

Publication Year: 2018, Article Sequence Number: 3801013
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This paper discusses design optimization for silicon avalanche photodetectors (APDs) fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology in order to achieve the highest possible performance. Such factors as PN junctions, guard ring structures, active areas, and back-end structures are considered for the optimization. CMOS-APDs reflecting varying aspects of these factor... View full abstract»

• Crosstalk Characterization of a Two-Tier Pixelated Avalanche Sensor for Charged Particle Detection

Publication Year: 2018, Article Sequence Number: 3801108
| | PDF (908 KB) | HTML

In this paper, a complete optical crosstalk characterization of a Geiger-mode pixelated avalanche detector for particle tracking application is presented. The device is composed of two tiers of CMOS-integrated avalanche detectors bump bonded with pixel-level interconnects, with each layer containing a 16 × 48 detector array. On-chip coincidence detection circuits, designed to discriminate b... View full abstract»

• Single-Photon Avalanche Diodes in a 0.16 μm BCD Technology With Sharp Timing Response and Red-Enhanced Sensitivity

Publication Year: 2018, Article Sequence Number: 3801209
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CMOS single-photon avalanche diodes (SPADs) have recently become an emerging imaging technology for applications requiring high sensitivity and high frame-rate in the visible and near-infrared range. However, a higher photon detection efficiency (PDE), particularly in the 700-950 nm range, is highly desirable for many growing markets, such as eye-safe three-dimensional imaging (LIDAR). In this pap... View full abstract»

• Single-Photon Avalanche Photodiode Based Fiber Optic Receiver for Up to 200 Mb/s

Publication Year: 2018, Article Sequence Number: 3801308
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The first fully integrated receiver based on single-photon avalanche diodes (SPADs) for data rates of up to 200 Mb/s is reported. An array of four SPADs in combination with quenching circuits and a short dead time of 3.5 ns is fabricated in a 0.35 μm CMOS process. The responses of the SPADs are combined using an integrated digital latch-type processing ... View full abstract»

• Analysis of Extended Threshold Wavelength Photoresponse in Nonsymmetrical p-GaAs/AlGaAs Heterostructure Photodetectors

Publication Year: 2018, Article Sequence Number: 3801407
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We analyze the extended threshold wavelength photoresponse beyond the standard threshold limit (λt = 1.24/Δ, where Δ is the activation energy) in nonsymmetrical pGaAs/AlGaAs heterostructure photodetectors with a barrier energy offset. We propose that hot-cold hole carrier interactions in the p-GaAs absorber are responsible for the threshold wavelength extension. Exp... View full abstract»

Aims & Scope

Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Prof. José Capmany
Universitat Politècnica de València, Spain Photonics Research Labs, ITEAM Research Institute
Virginia Polytechnic Institute & State University