# IEEE Transactions on Electron Devices

## Issue 11 • Nov. 2018

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## Filter Results

Displaying Results 1 - 25 of 77

Publication Year: 2018, Page(s):C1 - 4739
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2018, Page(s): C2
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• ### Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo

Publication Year: 2018, Page(s):4740 - 4746
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The inclusion of quantum effects in the transport direction plays an important role in the extensive research of ultrascaled electronic devices. In this context, it is necessary to study how these phenomena affect different technological architectures in order to conclude which one can be the best candidate to replace standard technology. This paper presents the implementation of direct source-to-... View full abstract»

• ### Assessment of THz Performance for a Lateral SiGe HBT on SOI With a Laterally Graded Base

Publication Year: 2018, Page(s):4747 - 4754
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This paper presents a simulation-based assessment of the design, characteristics, and feasibility of a lateral SiGe heterojunction bipolar transistor with a graded base on a silicon on insulator. A device was created with a focus on integration with the CMOS process, THz fT/fmax, and low-power dissipation. These characteristics are achieved with an ultrathin base width of 22 ... View full abstract»

• ### Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection

Publication Year: 2018, Page(s):4755 - 4763
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This paper presents the detailed physical insights into the silicon-controlled rectifier (SCR) phenomena in planar equivalent Fin SCR devices. The complexity and roadblocks for SCR triggering in FinFET technology are explored. Implication of contact silicidation on Fin SCR turn-ON is discussed in detail. Device design approaches are discussed for efficient Fin-enabled SCRs. In this direction, a no... View full abstract»

• ### Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation

Publication Year: 2018, Page(s):4764 - 4771
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To enable MOSFETs lifetime extrapolation of up to 10 years, bias temperature instability (BTI) is commonly accelerated via increased stress voltage and increased temperature. We demonstrate that BTI can be described by a unique activation energy map including the voltage and temperature dependence of stress and recovery and use capture and emission time maps to model the time dynamics responsible ... View full abstract»

• ### The First Compact Model to Determine$V_{T}$Distribution for DG-FinFET Due to LER

Publication Year: 2018, Page(s):4772 - 4779
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We report the first compact model to estimate theVTdistribution of double gate-FinFET due to line edge roughness. We derive closed-form expressions, representing the compact model, for: (1) mean and standard deviation of fin width (Wfin) in terms of geometrical and variability parameters of the FinFET; (2)VTas a function ofWfin View full abstract»

• ### Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-$\kappa$/Metal-Gate Work-Function Variation

Publication Year: 2018, Page(s):4780 - 4785
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The 3-D technology computer-aided design simulations were performed with four metal-gate materials (i.e., titanium nitride, tungsten nitride, tantalum nitride, and molybdenum nitride) to quantitatively estimate the magnitude of work-function variation (WFV)-induced threshold-voltage variation (WFV-induced σ VTH) in high-κ/metal-gate (HK/MG) MOSFETs [e.g., fin-shaped field-effect transis... View full abstract»

• ### Determination of Surface Recombination Velocity From Current–Voltage Characteristics in SiC p-n Diodes

Publication Year: 2018, Page(s):4786 - 4791
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Surface recombination velocity on mesa sidewalls of SiC p-n diodes with various surface passivation conditions was evaluated from the device-size-dependent preexponential factor of recombination current (${J}_{\text {0rec}}$). The diodes passivated by SiO2with postoxidation nitridation were dipped into HF to eliminat... View full abstract»

• ### Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs

Publication Year: 2018, Page(s):4792 - 4799
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This paper proposes a novel electrical method for the determination of channel temperature in AlGaN/GaN high-electron mobility transistors. A test structure combining various device geometries has been utilized to achieve the temperature dependence of the channel resistance and then applied to detect the channel temperature under the gate instead of that at the gate edge on the drain side. A 2-D e... View full abstract»

• ### Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

Publication Year: 2018, Page(s):4800 - 4806
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Using a commercial self-consistent Poisson-Schrödinger solver with the built-in possibility of allowing elastic energy minimization, the strain and the sheet charge density induced at the pseudomorphically grown Ga-face Wurtzite AlGaN/GaN heterojunctions are evaluated in the context of 3-D simulation of heterostructure field-effect transistor (HFET) epilayers etched into a variety of isolation-fea... View full abstract»

• ### TCAD Simulation for Nonresonant Terahertz Detector Based on Double-Channel GaN/AlGaN High-Electron-Mobility Transistor

Publication Year: 2018, Page(s):4807 - 4813
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We propose a nonresonant terahertz (THz) detector based on double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) utilizing a technology computer-aided design platform. The hydrodynamic model is simplified as the drift-diffusion model for nonresonant THz detection simulation. Dependence of THz photoresponse on various structure parameters of the detector is analyzed by simulation. ... View full abstract»

• ### Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry

Publication Year: 2018, Page(s):4814 - 4819
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A novel early gate dielectric AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) process is reported. With the highquality Si3N4dielectric by low-pressure chemical vapor deposition and damage free, self-terminating passivation layer etching at the gate area, the MIS-HEMTs on 150-mm Si substrate demonstrate excellent output performance and g... View full abstract»

• ### High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

Publication Year: 2018, Page(s):4820 - 4825
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A normally-OFF p-GaN gate AlGaN/GaN high-electron-mobility transistor with high on-state resistance (RON) uniformity was realized using a self-terminated digital etching technique. RON uniformity control was improved by simultaneously using an AlN etching stop layer in an epitaxial design and a novel digital etching procedure. Digital etching includes the multiple-cycle oxidation and the wet etchi... View full abstract»

• ### Transient Response of 0.18-${\mu}$m SOI MOSFETs and SRAM Bit-Cells to Heavy-Ion Irradiation for Variable SOI Film Thickness

Publication Year: 2018, Page(s):4826 - 4833
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In this paper, the effect of silicon-on-insulator (SOI) thickness scaling in fully and partially depleted SOI (FD-SOI and PD-SOI) devices is analyzed for their transient response to heavy-ion irradiation. We have analyzed radiation performance of FD-/PD-SOI MOSFETs and 6-T SRAM bit-cells, conforming to 0.18-μm technology node, using calibrated 2-D TCAD simulations. We, for the first time, report h... View full abstract»

• ### The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3Stack MIM Capacitors

Publication Year: 2018, Page(s):4834 - 4838
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Multilayer BaTiO3/BiFeO3(BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An ~74.1% increase of the relative permi... View full abstract»

• ### New Method for Reduction of the Capacitor Leakage Failure Rate Without Changing the Capacitor Structure or Materials in DRAM Mass Production

Publication Year: 2018, Page(s):4839 - 4845
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In the development of dynamic random access memory (DRAM) with a device size of 20 nm or less, the leakage current of a capacitor with high-k dielectrics is one of the main factors causing the failure of a device. To reduce the failure rate of the device, we conducted experiments to reduce the boron impurities, which form defect sites in the dielectrics of the capacitor. The boron source flux was ... View full abstract»

• ### NBTI-Related Variability Impact on 14-nm Node FinFET SRAM Performance and Static Power: Correlation to Time Zero Fluctuations

Publication Year: 2018, Page(s):4846 - 4853
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A Monte Carlo SPICE framework is proposed to evaluate the impact of negative bias temperature instability (NBTI) variability on performance and static power (PS) of static random access memory (SRAM) array on 14-nm node FinFETs. Gamma distribution is found to be applicable for NBTI-induced threshold voltage (ΔVT) and subthreshold slope (ΔSS) shifts by using data set from diff... View full abstract»

• ### Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification

Publication Year: 2018, Page(s):4854 - 4860
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The effects of chamber pressure (${P}_{\text {C}}$) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing${P}_{\text {C}}$, which were explain... View full abstract»

• ### 2-D Smart Surface Object Localization by Flexible 160-nW Monolithic Capacitively Coupled 12-b Identification Tags Based on Metal–Oxide TFTs

Publication Year: 2018, Page(s):4861 - 4867
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Among the diverse and ever-expanding list of candidate technologies to serve the Internet of Everything, the rise of thin-film transistors on plastic as active components for ubiquitous ICs has been nothing short of meteoric. The stage for this explosion of interest was set by a pivotal advantage of the low manufacturing cost and ultrathin form factor, as demonstrated in recent prototypes of thin-... View full abstract»

• ### Effects of Parasitic Source/Drain Field Plates on Performances of Channel-Passivated Amorphous InGaZnO Thin-Film Transistors

Publication Year: 2018, Page(s):4868 - 4874
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This paper investigates the effects of parasitic source/drain (S/D) field plates (FPs) on electrical characteristics of channel-passivated amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). For the S/D metal of the channel-passivated TFT, besides acting as conducting electrodes, they can be FPs to influence the carrier conduction in the semiconductor layer via the channel pas... View full abstract»

• ### A Surface-Potential-Based Drain Current Compact Model of Dynamic-Depletion Polysilicon Thin-Film Transistors

Publication Year: 2018, Page(s):4875 - 4882
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An analytical surface-potential-based drain current model of dynamic-depletion (DD) polysilicon (poly-Si) thin-film transistors (TFTs) is proposed in this paper. In the 1-D Poisson equation, total charge density is reformulated by an effective charge density, which allows a closed-form surface potential calculation scheme. Different boundary conditions between partial depletion and full depletion ... View full abstract»

• ### Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Publication Year: 2018, Page(s):4883 - 4890
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The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated, and the results are correlated with the multiplication noise and leakage current. The incoming data were modulated using pulse-position modulation, and the bit error rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BE... View full abstract»

• ### Hybrid White Light-Emitting Diodes Utilizing Radiative or Nonradiative Energy Transfer for Wavelength Conversion

Publication Year: 2018, Page(s):4891 - 4896
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Hybrid light-emitting diodes (LEDs) were fabricated by spin coating poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) on blue InGaN/GaN multiple-quantum-well (MQW) LED chips as a downconverter. As the F8BT film thickness was in the range of 235–290 nm, the hybrid LEDs emitted cool white light with a downconversion efficiency of 28.8%. The F8BT film quality was markedly improved by postannealin... View full abstract»

• ### Experimental and Theoretical Study of the Optical Properties Optimization of an OLED in a Microcavity

Publication Year: 2018, Page(s):4897 - 4904
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In this paper, we aim to theoretically and experimentally study an organic light emitting diode (OLED) in a planar microcavity. One important issue that should be considered is to find an optimal design for an OLED in a microcavity: on one hand, the OLED thickness needs to be adjusted to get resonance at the desired wavelength, on another hand, the location of the emitter dipoles with respect to t... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy