# IEEE Transactions on Electron Devices

## Issue 10 • Oct. 2018

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## Filter Results

Displaying Results 1 - 25 of 106
• ### Front cover

Publication Year: 2018, Page(s): C1
| PDF (364 KB)
• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2018, Page(s): C2
| PDF (87 KB)

Publication Year: 2018, Page(s):4029 - 4033
| PDF (210 KB)
• ### Guest Editorial Special Issue on 2-D Materials for Electronic, Optoelectronic, and Sensor Devices

Publication Year: 2018, Page(s):4034 - 4039
| PDF (4239 KB) | HTML
• ### CVD Technology for 2-D Materials

Publication Year: 2018, Page(s):4040 - 4052
| | PDF (1878 KB) | HTML

The urgently growing demand for lowering the power consumption and increasing the performance in electronic and optoelectronic systems has been driving the scientific community to explore new materials and device architectures. In light of this, 2-D materials including graphene, hexagonal boron nitride, and transition metal dichalcogenides have the potential to revolutionize our semiconductor indu... View full abstract»

• ### Investigating Laser-Induced Phase Engineering in MoS2Transistors

Publication Year: 2018, Page(s):4053 - 4058
| | PDF (1593 KB) | HTML

Phase engineering of MoS2transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2transistors by simple light exposure. Nevertheless, the f... View full abstract»

• ### Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy

Publication Year: 2018, Page(s):4059 - 4067
| | PDF (3474 KB) | HTML

In 2-D van der Waals heterostructures, interactions between atomic layers dramatically change the vibrational properties of the hybrid system and demonstrate several interesting phenomena that are absent in individual materials. In this paper, we have investigated the vibrational properties of the heterostructure between transition metal dichalcogenide (TMD) and hexagonal boron nitride (hBN) on go... View full abstract»

• ### Gate-Tuned Temperature in a Hexagonal Boron Nitride-Encapsulated 2-D Semiconductor Device

Publication Year: 2018, Page(s):4068 - 4072
| | PDF (1586 KB) | HTML

Thermal management in 2-D electronics is critical for optimizing their performances due to the growing heat generations at the nanoscale. Here, we use Raman thermometry to study the Joule heating of a MoS2field-effect transistor encapsulated by hexagonal boron nitride and with graphene electrodes. We show a sensitive temperature increase relevant to the heating power, which is tunable b... View full abstract»

• ### Contacting and Gating 2-D Nanomaterials

Publication Year: 2018, Page(s):4073 - 4083
| | PDF (2887 KB) | HTML

Two-dimensional (2-D) nanomaterials provide opportunities for a wide range of applications. In order to harness their usefulness, understanding and controlling the interface between 2-D crystals and other materials is of paramount importance. For electronic device applications, large contact resistance and difficulty integrating high-quality dielectrics are the most pressing challenges. In this re... View full abstract»

• ### Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS2Transistors

Publication Year: 2018, Page(s):4084 - 4092
| | PDF (3422 KB) | HTML

A scalable process that can yield low-resistance contacts to transition metal dichalcogenides is crucial for realizing a viable device technology from these materials. Here, we systematically examine the effect of high-k dielectric-mediated doping on key device metrics including contact resistance and carrier mobility. Specifically, we use top-gated transistors from monolayer MoS2as a t... View full abstract»

• ### Mobility Anisotropy in Black Phosphorus MOSFETs With HfO2Gate Dielectrics

Publication Year: 2018, Page(s):4093 - 4101
| | PDF (3489 KB) | HTML

Precise measurements of the mobility anisotropy along high-symmetry crystal axes in black phosphorus (BP) MOSFETs are reported. Locally back-gated BP MOSFETs with 13-nm HfO2dielectric and channel length ranging from 0.3 to 0.7$\mu \text{m}$are fabricated. A single BP flake of a uniform thickness is exfoliated and etc... View full abstract»

• ### Wafer-Scale Fabrication of Recessed-Channel PtSe2MOSFETs With Low Contact Resistance and Improved Gate Control

Publication Year: 2018, Page(s):4102 - 4108
| | PDF (2566 KB) | HTML

Wafer-scale fabrication of PtSe2MOSFETs was demonstrated by photolithography on Pt films directly selenized at 400 °C. Taking advantage of the unique property of PtSe2to transition from a semiconductor to a semimetal as its thickness increases beyond a few monolayers, channel recess was adapted for improving gate control while keeping the contact resistance below 0.01 Ω · cm.... View full abstract»

• ### 2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges

Publication Year: 2018, Page(s):4109 - 4121
| | PDF (2136 KB) | HTML

Since the discovery of graphene in 2004, which proved the existence of 2-D crystals in nature, layered materials also known as van der Waals solids have received extensive reexamination, especially in the single-layer and multilayer forms because of their van der Waals type structure and unique properties that not only benefit many existing electronic components but also enable novel device concep... View full abstract»

• ### Complementary Black Phosphorus Nanoribbons Field-Effect Transistors and Circuits

Publication Year: 2018, Page(s):4122 - 4128
| | PDF (1986 KB) | HTML

This paper demonstrates a high-performance black phosphorus nanoribbons field-effect transistor (BPNR-FET) and systematically investigates methods for enhancing its anisotropic carrier transport. The BPNR-FET shows a strong dependence on crystal orientation in which the best mobility performance is achieved in armchair-oriented nanoribbons. A downscaling of nanoribbon width is shown to improve the... View full abstract»

• ### All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

Publication Year: 2018, Page(s):4129 - 4134
| | PDF (2135 KB) | HTML

We report on the fabrication and characterization of field-effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal-oxide-semiconductor (CMOS) compatible nickel edge contacts. Noncontact terahertz time-domain spectroscopy (THz-TDS) of large-area BN/graphene/ BN (BN/G/BN) stacks reveals average s... View full abstract»

• ### Low-Frequency Noise in Supported and Suspended MoS2Transistors

Publication Year: 2018, Page(s):4135 - 4140
| | PDF (1527 KB) | HTML

Sensitivity of sensors, the phase noise of oscillators, and intrinsic device performance at the nanoscale are primarily limited by fluctuations in resistance at low frequencies, also called flicker noise. These intrinsic fluctuations in resistance become more prominent in two-dimensional materials due to their ultrathin nature. Here, we report the low-frequency noise (LFN) behavior of supported an... View full abstract»

• ### Self-Powered, Highly Sensitive, High-Speed Photodetection Using ITO/WSe2/SnSe2Vertical Heterojunction

Publication Year: 2018, Page(s):4141 - 4148
| | PDF (2413 KB) | HTML

2-D transition metal di-chalcogenides are the promising candidates for ultralow intensity photodetection. However, the performance of these photodetectors is usually limited by ambience induced rapid performance degradation and long-lived charge trapping induced slow response with a large persistent photocurrent when the light source is switched off. Here, we demonstrate an indium tin oxide (ITO)/... View full abstract»

• ### Enhanced Carrier Density in a MoS2/Si Heterojunction-Based Photodetector by Inverse Auger Process

Publication Year: 2018, Page(s):4149 - 4154
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When exploring the charge transport in the MoS2/Si heterojunction, it is imperative to understand the contribution of different carrier interactions and scattering mechanisms in the conduction process. Here, we have demonstrated an ultrasensitive photodetector based on MoS2/Si (for both p-type and n-type Si) van der Walls (vdW) heterojunction, which provides a high photorespo... View full abstract»

• ### Esaki Diodes Based on 2-D/3-D Heterojunctions

Publication Year: 2018, Page(s):4155 - 4159
| | PDF (1407 KB) | HTML

Esaki diodes based on interband tunneling have the characteristics of negative differential resistance (NDR) and ultrafast transient time, which lead to broad applications including oscillators, multivalue memories, and terahertz detectors. In this paper, we present the first demonstration of Esaki diodes based on 2-D/3-D heterojunctions—more specifically, chemical vapor deposition MoS2... View full abstract»

• ### Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits

Publication Year: 2018, Page(s):4160 - 4166
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Reducing the energy and power dissipation of conductive bridge random access memory (CBRAM) cells is of critical importance for their applications in future Internet of Things (IoT) device and neuromorphic computing platforms. Atomically thin CBRAMs enabled by 2-D materials are studied theoretically by using 3-D kinetic Monte Carlo simulations together with experimental characterization. The resul... View full abstract»

• ### Modeling of Electron Devices Based on 2-D Materials

Publication Year: 2018, Page(s):4167 - 4179
| | PDF (2175 KB) | HTML

The advent of graphene and related 2-D materials has attracted the interest of the electron device research community in the past 14 years. The possibility to boost the transistor performance and the prospects to build novel device concepts with 2-D materials and their heterostructures has awakened a strong experimental interest that requires continuous support from modeling. In this paper, we rev... View full abstract»

• ### Ab InitioSimulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels

Publication Year: 2018, Page(s):4180 - 4187
| | PDF (1941 KB) | HTML

Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single-layer (SL) transition metal dichalcogenides are not well suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors... View full abstract»

• ### Intrinsic Performance of Germanane Schottky Barrier Field-Effect Transistors

Publication Year: 2018, Page(s):4188 - 4195
| | PDF (2739 KB) | HTML

Germanane (GeH), a hydrogenated germanium monolayer, is a new family of 2-D semiconductors, exhibiting promising potential for electronic device applications. Here, we investigate GeH Schottky barrier (SB) field-effect transistors (FETs) using atomistic quantum transport simulations. Our simulation results reveal that the ohmic-contact device with zero SB height (ΦBn) exhibits ~20% lowe... View full abstract»

• ### Intrinsic Difference Between 2-D Negative-Capacitance FETs With Semiconductor-on-Insulator and Double-Gate Structures

Publication Year: 2018, Page(s):4196 - 4201
| | PDF (2513 KB) | HTML

With the aid of an analytical and general model, this paper investigates the intrinsic difference in the negative-capacitance (NC) effect and design space between semiconductor-on-insulator (SOI) and double-gate (DG) metal-ferroelectric-insulator-semiconductor-type NC field-effect transistors (NCFETs) with a 2-D semiconducting transition-metal-dichalcogenide channel (2-D NCFET). By examining the d... View full abstract»

• ### Charge-Based Modeling of Transition Metal Dichalcogenide Transistors Including Ambipolar, Trapping, and Negative Capacitance Effects

Publication Year: 2018, Page(s):4202 - 4208
| | PDF (1579 KB) | HTML

In this paper, we present a charge-based compact model for transition metal dichalcogenide (TMD)-based thin-channel field-effect transistor. In model development, first, charge densities at the source and drain terminals are calculated in terms of the applied gate and drain voltages. Calculated charge densities are then used to develop a charge-based drain-current model. Effects of interface traps... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy