# IEEE Transactions on Electron Devices

## Issue 2 • Feb. 2019

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## Filter Results

Displaying Results 1 - 25 of 51

Publication Year: 2019, Page(s):C1 - 838
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2019, Page(s): C2
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• ### A SPICE Compatible Compact Model for Hot-Carrier Degradation in MOSFETs Under Different Experimental Conditions

Publication Year: 2019, Page(s):839 - 846
Cited by:  Papers (1)
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A compact hot-carrier degradation (HCD) time kinetics model is proposed for conventional, lightly doped drain, and drain extended MOSFETs and FinFETs. It can predict measured data obtained using different methods such as shift in threshold voltage ( $\Delta {V}_{\text {T}}$ ), linear ( View full abstract»

• ### Investigation of the Effects and the Random-Dopant-Induced Variations of Source/Drain Extension of 7-nm Strained SiGe n-Type FinFETs

Publication Year: 2019, Page(s):847 - 854
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In this paper, we simulated the effects of the source/drain extensions (SDEs) of the 7-nm strained SiGe n-type FinFETs and the random dopant fluctuations (RDFs) therein by TCAD tools. First, we simulated different SDE lengths and doping concentrations to examine their effects on the device characteristics. Second, we simulated the RDF in SDE to examine the device variability. Simulation results sh... View full abstract»

• ### An Analytical Model for the Effective Drive Current in CMOS Circuits

Publication Year: 2019, Page(s):855 - 860
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Inverter delay is often evaluated as $\textit {CV}_{\text {dd}}/{I}_{\text {eff}}$ , where ${C}$ is the load capacitance, ${V}_{\text {dd}}$ is the supply voltage, and View full abstract»

• ### Back-Gate Bias and Substrate Doping Influenced Substrate Effect in UTBB FD-SOI MOS Transistors: Analysis and Optimization Guidelines

Publication Year: 2019, Page(s):861 - 867
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In this paper, we present physical insights into the role of substrate on the anomalous frequency behavior of small-signal transconductance and output conductance in the ultrathin body and buried oxide fully depleted silicon-on-insulator MOS transistors. Using the simple dc analysis, we attribute this anomalous behavior to the negative feedback originating from both minority and majority carriers ... View full abstract»

• ### An Impact Ionization MOSFET With Reduced Breakdown Voltage Based on Back-Gate Misalignment

Publication Year: 2019, Page(s):868 - 875
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In this paper, we propose a misaligned double-gate p-i-n impact ionization MOS (MIMOS) with a deliberate misalignment between the top and bottom gates. The presence of a misaligned bottom gate leads to band-to-band-tunneling of electrons at the source-intrinsic region interface and increases the number of carriers for impact ionization. The electric field redistribution provides a longer transport... View full abstract»

• ### Carrier Transport Mechanisms Underlying the Bidirectional ${V}_{\mathrm{{TH}}}$ Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Publication Year: 2019, Page(s):876 - 882
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The threshold voltage ( ${V} _{\text {TH}}$ ) instability of p-GaN/AlGaN/GaN HEMTs was investigated under forward gate stress. A unique bidirectional ${V} _{\text {TH}}$ shift ( $\Delta {V}_{\text {TH}}$ View full abstract»

• ### Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

Publication Year: 2019, Page(s):883 - 889
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This paper analyses the influence of the GaN and Si3N4 passivation (or “cap”) layer on the top of the AlGaN barrier layer on the performance and reliability of Schottky barrier diodes with a gated edge termination (GET-SBDs). Both GaN cap and Si3N4 cap devices show similar dc characteristics but a higher density of traps at the SiO2/GaN interf... View full abstract»

• ### Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Publication Year: 2019, Page(s):890 - 895
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It is shown that an $E_{\rm C}$ –0.90 eV trap in commercial AlGaN/GaN MISHEMTs grown on a Si (111) substrate is responsible for a −1.8-V threshold voltage ( $V_{\rm T}$ ) instability using a combination of defect spectroscopy and double-pulsed current–volta... View full abstract»

• ### Design of Transistors Using High-Permittivity Materials

Publication Year: 2019, Page(s):896 - 900
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The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric permittivity materials in the gate–drain depletion region can reduce electric field variations by screening the field due to depleted charges. This enables simultaneously high sheet charge density and ... View full abstract»

• ### Thermophotovoltaic Energy Conversion With GaSb Lattice-Matched GaxIn1−xAsySb1−y Diodes

Publication Year: 2019, Page(s):901 - 907
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Residing on the experimentally available GaInAsSb alloys, thermophotovoltaic (TPV) energy conversion with GaSb lattice-matched GaInAsSb diodes has been systematically studied. It is shown that the dependence of the optimal diode structure and the resulting performances on its bandgap can be uniformly modeled by a quadratic function, and the desirable coefficients versus the evolution of radiator t... View full abstract»

• ### Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTs

Publication Year: 2019, Page(s):908 - 916
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The impact on self-heating mechanisms observed in GaN HEMTs fabricated on Si substrates is studied by means of a cellular Monte Carlo particle-based device simulator. Within this framework, the thermal effects are included through an energy-balance equation for phonons allowing for self-consistently coupling the charge and heat transport. First, the advanced electrothermal model of an experimental... View full abstract»

• ### Si-Based FET-Type Synaptic Device With Short-Term and Long-Term Plasticity Using High- $\kappa$ Gate-Stack

Publication Year: 2019, Page(s):917 - 923
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In this paper, we investigate the characteristics of short-term and long-term synaptic plasticity in a Si-based field-effect transistor-type memory device. An Al2O3/HfO2/Si3N4 gate dielectric stack is used to realize short-term and long-term plasticity (STP/LTP). Si3N4 and HfO2 layers are designed to implement ... View full abstract»

• ### A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_{{x}}$ Bilayer Structure

Publication Year: 2019, Page(s):924 - 928
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To effectively solve the crosstalk issue in high-density crossbar array (CBA), high rectifying characteristics should be introduced in the resistance random-access memory (ReRAM) device, and in-depth understanding of the affecting factors on rectifying properties is essential for the large-scale application of ReRAM. In this paper, a high-performance self-rectifying device with CMOS compatible Pd/... View full abstract»

• ### SRAMs and DRAMs With Separate Read–Write Ports Augmented by Phase Transition Materials

Publication Year: 2019, Page(s):929 - 937
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We propose SRAMs and DRAM with independent read–write paths employing phase transition material (PTM) in the read port to enable a more compact design compared to standardmultiport cells. Our technique employs 1) the orders of magnitude difference in the resistances of the insulating and metallic phases of the PTM and 2) regulated phase transitions to design a 7T single-ended SRAM, an 8T different... View full abstract»

• ### Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free Memory

Publication Year: 2019, Page(s):938 - 943
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Resistive random access memory (ReRAM), a new emerging nonvolatile memory technology based on changes in electrical resistivity of a dielectric film, offers promising advantages such as scalability, fast switching, and low operation voltage. However, for ReRAM to become a successful technology, it is necessary to accurately control the stochastic nature of the conductive nanoscale filaments (CNFs)... View full abstract»

• ### Influence of Size and Shape on the Performance of VCMA-Based MTJs

Publication Year: 2019, Page(s):944 - 949
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In this paper, we investigate the relationship between size, shape, and the performance of the voltage-controlled magnetic anisotropy (VCMA)-based magnetic tunnel junctions (MTJs) suitable for gigabit scale MRAMs with 10 years of retention time. A Fokker–Planck simulation framework is developed to model the magnetization dynamics in the presence of thermal noise. Here, we numerically show that the... View full abstract»

• ### Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays

Publication Year: 2019, Page(s):950 - 956
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Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing CMOS tech... View full abstract»

• ### Electrode-Adaptive Thin-Film Integrated Logic Circuits

Publication Year: 2019, Page(s):957 - 962
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Amorphous oxide-based thin-film logic circuits have been fabricated using only an n-type amorphous silicon–zinc–tin–oxide (a-SZTO) channel layer with different source/drain electrodes. Enhancement-mode thin-film transistors (TFTs) were fabricated with oxide electrodes. Depletion-mode TFTs were fabricated with metal electrode. Work functions were measured by Kelvin probemicroscopy. The barrier heig... View full abstract»

• ### Electroluminescent Cooling in III–V Intracavity Diodes: Practical Requirements

Publication Year: 2019, Page(s):963 - 968
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Recent studies of electroluminescent cooling (ELC) in III–V structures demonstrate the need to better understand the factors affecting the efficiency of light emission and energy transport in light-emitting diodes (LEDs). In this paper, we establish the physical and operational requirements for reaching the efficiencies needed for observing ELC in the III–V intracavity double-diode structures at h... View full abstract»

• ### Quarter Video Graphics Array Digital Pixel Image Sensing With a Linear and Wide- Dynamic-Range Response by Using Pixel-Wise 3-D Integration

Publication Year: 2019, Page(s):969 - 975
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We have developed a quarter video graphics array (QVGA) digital pixel image sensor by using the 3-D integration technology. The pulse-frequency modulation (PFM) analog-to-digital converter (ADC) operates as a digital pixel, which overcomes the signal saturation due to the full well capacity of the photodiode (PD). We have also newly designed a PFM-ADC for pixels with a pinned PD and a floating dif... View full abstract»

• ### High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction

Publication Year: 2019, Page(s):976 - 982
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In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, th... View full abstract»

• ### Noise Characteristics of MgZnO-Based Metal–Semiconductor–Metal Photodetector

Publication Year: 2019, Page(s):983 - 990
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The noise characteristics of wurtzite MgZnO metal–semiconductor–metal photodetectors (PDs) are investigated by a proposed equivalent noise circuit model considering the effects of thermal noise and shot noise induced by the resistances and fluctuations of photogenerated carriers, respectively. Then, the impact of series and enhanced gain peaking techniques on the noise properties of the PDs is stu... View full abstract»

• ### Turn-OFF Transient Analysis of Superjunction IGBT

Publication Year: 2019, Page(s):991 - 998
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A turn-OFF transient analysis of the superjunction (SJ) insulated-gate bipolar transistor (IGBT) based on an analytical model as a function of structural parameters is presented in this paper. The physical phenomenon dependent on the doping density of the n-/p-pillar of the SJ IGBT could be explained using the analytical model to predict the static and transient characteristics. From this model, t... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy