Third International Conference on Power Electronics and Variable-Speed Drives

13-15 July 1988

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Displaying Results 1 - 25 of 111
  • Electronic control of power flow: present possibilities and some expected trends in applications

    Publication Year: 1988, Page(s):1 - 12
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (969 KB)

    The author reviews the state-of-the-art in power flow control with reference to devices, topologies, theory, and notes on applications. The devices discussed are power convertors. The author then goes on to discuss the limitations of power electronics; switching losses and EM limitations. Developments in power convertor technology are discussed, particularly in the area of switching losses. Possib... View full abstract»

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  • Megahertz direct base drives for high power converters with high voltage bipolar power transistors

    Publication Year: 1988, Page(s):13 - 16
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (297 KB)

    In bipolar transistor converters two considerations are usually extremely important. These are low total losses (base drive and main transistor) and compact construction. These considerations first led to the concept of the compensated Darlington power switch, and then the concept of the optimized pulsed transformer coupled direct base drive. The authors discuss the topology of an experimental 1 M... View full abstract»

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  • Fast high current switch for higher power switching power supplies

    Publication Year: 1988, Page(s):17 - 20
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (214 KB)

    In a high power switched mode supply (SMPS) there is a need for a high power switching device. Generally three types of semiconductor switching devices are used in this type of application, thyristors, bipolar junction transistor (BJTs) and field effect transistors (FETs). Thyristors can handle very high power, but suffer from relatively slow switching times, and are generally used at frequencies ... View full abstract»

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  • Recent development and future potential of the power static induction (SI) devices

    Publication Year: 1988, Page(s):21 - 24
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (308 KB)

    Power static induction (SI) devices, such as the power static induction transistors (SITs) and SI thyristors, have been developed since the 1970s in Japan. The power SI devices include the normally-on/off type power SITs and the normally-on/off type power SI thyristors. By utilizing the light triggered/quenched SI thyristors as a key switching valve for a long-distance DC power transmission line, ... View full abstract»

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  • Proton irradiated high speed SI-thyristors

    Publication Year: 1988, Page(s):25 - 28
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (240 KB)

    A static induction thyristor (SIThy) is a semiconductor power device with many advantages. The authors report on the normally-off type SIThy with a surface-gate structure. The main current of a SIThy is controlled by a gate potential. At the turn-off process of a SIThy, the carrier injection from the anode region to the high resistivity region results to the tail current as well as GTO thyristor. ... View full abstract»

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  • Resonant high-frequency inverters using static induction transistors

    Publication Year: 1988, Page(s):29 - 36
    Cited by:  Papers (6)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (575 KB)

    The authors describe voltage-fed full bridge series resonant inverters using static induction transistors (SITs) which operate efficiently in the frequency range of 100 approximately 1000 kHz. The trial inverters are applied to 100 kHz and/or 400 kHz high power induction heating and melting power supplies. In addition, a quasi-resonant inverter suitable for radio-frequency applications is produced... View full abstract»

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  • Recent development of the static induction (SI) thyristors

    Publication Year: 1988, Page(s):37 - 40
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (305 KB)

    The authors describe two kinds of new SI thyristors. Firstly they introduce a new idea for an anode-emitter-shorted structure for the SI thyristor. The performance of the new anode-emitter-shorted 1200 V-10 A class buried-gate SI thyristor is described compared with the performance of the conventional IGBTs. Secondly, they describe the performance of very low-loss, high-efficiency, planar-gate nor... View full abstract»

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  • Optimised power stages for high frequency 380/440 VAC medium power switch mode supplies

    Publication Year: 1988, Page(s):41 - 46
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (307 KB)

    The authors present the elements necessary to make the optimum choice of power semiconductors (for the transistors and secondary diodes) and the power stage configurations for medium power SMPS (between 1 to 15 kVA). The power stage realized comprises of an asymmetrical bridge forward converter. An optimised power switch combining bipolar and MOSFET technologies is developed. It is capable of swit... View full abstract»

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  • MOSFETs and FREDFETS in motor drive equipment

    Publication Year: 1988, Page(s):47 - 50
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (263 KB)

    The authors discuss the properties of the FREDFET, a technology which yields a MOSFET with a very fast built-in reverse diode with properties similar to a discrete fast epitaxial rectifier. It is shown that its characteristics make the device an excellent choice for high frequency bridge leg systems such as 20 kHz AC motor control systems. Investigations have been carried out in dedicated test cir... View full abstract»

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  • Study of power bidirectional switches using MOS-transistors

    Publication Year: 1988, Page(s):51 - 53
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (178 KB)

    The authors compare three structures of bidirectional switches. They design low-cost control circuits without any sacrifice on standard features. The chosen switch is used in an AC-chopper whose characteristics are compared with a triac converter. The use of bidirectional switches simplifies the structures of static energy converters and increases performance.<<ETX>> View full abstract»

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  • Inductive load switching measurements: realistic device evaluation

    Publication Year: 1988, Page(s):54 - 57
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (227 KB)

    Most power semiconductor manufacturers can provide performance data for even the most recently introduced device. This data will normally include limiting values for applied voltage, load current and dissipated power, together with selected dynamic switching parameters. As power semiconductors are applied in applications requiring ever higher operating frequencies the correct evaluation of the swi... View full abstract»

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  • Power device design for a hybrid actuator

    Publication Year: 1988, Page(s):58 - 61
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (259 KB)

    There is an increasing demand for high current actuators with integral fault diagnosis. These can be produced using monolithic intelligent MOS based structures or by using a multichip hybrid. The authors describe an example of a two chip hybrid, high-sided, power actuator for 5 to 6 A DC current handling capability at 0.25 V saturation. The two chips comprise an analogue controller and power drive... View full abstract»

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  • New technology enables a breakthrough in DC/DC converter design

    Publication Year: 1988, Page(s):62 - 66
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (300 KB)

    Until a few years ago the DC to DC converter function had been implemented with discrete transistors and either separate voltage comparators and references or monolithic PWM controller integrated circuits. Being a leader in the power integrated circuit field, SGS-Thomson Microelectronics saw the possibility to integrate the various desirable functions into one monolithic structure including the po... View full abstract»

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  • The future of bipolar transistors

    Publication Year: 1988, Page(s):67 - 70
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (275 KB)

    The bipolar power transistor technology is in permanent evolution under the pressure of two important parameters: a request from power system designers for an increase in ruggedness (SOA, RBSOA, ES/B), an improvement in switching times, a decrease in drop voltage and easy to drive products; and the automation and control of wafer processing in order to improve the quality, the electrical parameter... View full abstract»

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  • Computer-aided investigation of the turn-off performance of GTO thyristors

    Publication Year: 1988, Page(s):71 - 74
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (258 KB)

    A one-dimensional numerical model has been derived for the parametric study of the turn-off performance of gate-turn-off thyristors. This model takes into account all major physical effects and represents the interactions between the inner device charge dynamics and the operation of an external circuit. It is shown that, in spite of the one-dimensional simplification, this model provides an accura... View full abstract»

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  • Computer modelling of GTO series strings in megawatt inverters

    Publication Year: 1988, Page(s):75 - 78
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (280 KB)

    In order to study the effect of differences in GTO turn-on in series strings, semi-empirical SPICE models of the GTO and snubber diode have been used which were based on experimental data. The GTO model was derived using a two stage device/circuit interaction which is believed to accurately represent turn-on behaviour under these conditions. The computer runs have given useful quantitative data on... View full abstract»

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  • Spectral assessment of inverter waveforms

    Publication Year: 1988, Page(s):79 - 82
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (259 KB)

    The author discusses work on a static frequency changer. Frequency plane analysis was used because it reduces computation time and removes cumulative errors that might occur in transient analysis. The author discusses invertor switching, the transistor switching function and load matching.<<ETX>> View full abstract»

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  • Switching behaviour of a pulse-commutated GTO

    Publication Year: 1988, Page(s):83 - 86
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (337 KB)

    The operation of an asymmetric (anode shorted) GTO is described theoretically and analysed experimentally. The interrelation between the turn-off losses and the turn-off time with the anode current, and the point of time where the negative gate voltage is applied, is presented. The influences of the snubber and gating circuit are also considered. It is shown that the anode shorted GTO can be opera... View full abstract»

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  • Increasing frequency using GTO in gate-assisted-turn-off mode

    Publication Year: 1988, Page(s):87 - 90
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (260 KB)

    The main advantage of GTO over thyristors is to reduce tq (turn-off time) to zero but at the cost of increasing Woff losses due to the tail current that sweeps residual stored charge off the thick N base while the voltage is restored across the device. Nevertheless, no significant improvement is obtainable if tq is much shorter than the carriers' life time in the N base, and auxiliary circuits' di... View full abstract»

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  • A high current, ultrasonic GTO thyristor cathode switch

    Publication Year: 1988, Page(s):91 - 94
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (206 KB)

    The cascode switch, the series connection of a high voltage bipolar device and low voltage MOSFET, provides high power and high frequency in a small volume. The cascode switch has many advantages, reverse gate or base current is equal to the turn off collector or anode current level and can be established at a rate of greater than 1000 A/ mu s. The authors discuss a gate turn off thyristor (GTO) a... View full abstract»

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  • The practical application limits of very high power GTOs and very high power bipolar transistors

    Publication Year: 1988, Page(s):95 - 98
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (302 KB)

    An overview is given of the practical application limitations of very high power GTOs up to 2500 A I/sub TCM/ and 4500 V V/sub DRM/ and very high power bipolar transistors up to 2000 A I/sub C(CON)/ and 1200 V V/sub CEX/. Some general comments are made about the limitations of medium power GTOs, transistors, Darlingtons and the combined MOS gated charge modulated devices (e.g. insulated gate trans... View full abstract»

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  • The characterisation of snubber diodes for use with high voltage GTO thyristors

    Publication Year: 1988, Page(s):99 - 102
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (185 KB)

    In a GTO (gate turn-off) thyristor the rate of rise of reapplied voltage during turn-off is limited by a snubber capacitor to avoid a refire. The capacitor stored energy is dissipated during turn-on by a resistor, which is then 'shorted' out by a snubber diode during turn-off. Thus during normal GTO operation the snubber diode is subjected to a successive sequence of forward and reverse voltage bi... View full abstract»

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  • Stray inductances in GTO thyristor circuits

    Publication Year: 1988, Page(s):103 - 106
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (263 KB)

    Gate turn-off thyristors (GTOs) interrupt current at such tremendously high rates of fall, typically approaching 4000 A/ mu s in high power types, that the voltages induced by stray inductances as low as a fraction of a microhenry can be damaging. This necessitates the connection of a snubber network across each GTO, into which its anode current is diverted at turn-off. The authors present the res... View full abstract»

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  • Protecting a GTO under short circuit conditions

    Publication Year: 1988, Page(s):107 - 110
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (249 KB)

    With the increasing application of the gate-turn-off thyristor (GTO), a need has arisen for improved self-protection under fault conditions where fast-acting semiconductor fuses are not available to fulfill this function. The authors investigate the design of the driver, snubber and protection circuits of a 25 amp 650 volt GTO used in a chopper circuit application. In particular they present a met... View full abstract»

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  • Design of a high voltage chopper for traction applications using two series-connected GTO thyristors

    Publication Year: 1988, Page(s):111 - 115
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (173 KB)

    The authors study the principal dimensioning calculations of the different protection circuits and the snubbers of a single phase chopper using two series-connected high power GTO's. The experimental results obtained by this chopper loaded on an inductive charge are also presented. Finally, a brief comparative study of the different traction systems which are liable to be industrialized in the nea... View full abstract»

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