Conference on Electron Devices, 2005 Spanish

2-4 Feb. 2005

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  • 2005 Spanish Conference on Electron Devices. Proceedings (IEEE Cat. No.05EX965)

    Publication Year: 2005
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  • [Blank page]

    Publication Year: 2005, Page(s): 0_2
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  • 2005 Spanish Conference on Electron Devices

    Publication Year: 2005, Page(s): 0_3
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  • Copyright

    Publication Year: 2005, Page(s): 0_4
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  • Sponsors

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  • Exhibitors

    Publication Year: 2005, Page(s): 0_6
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  • Scienfic comitee

    Publication Year: 2005, Page(s): 0_7
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  • Organising comitee

    Publication Year: 2005, Page(s): 0_8
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  • [Blank page]

    Publication Year: 2005, Page(s): 0_9
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  • [Blank page]

    Publication Year: 2005, Page(s): 0_10
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  • Index [Breaker page]

    Publication Year: 2005, Page(s): 0_11
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  • [Blank page]

    Publication Year: 2005, Page(s): 0_12
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  • Table of content

    Publication Year: 2005, Page(s):0_13 - 0_21
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    Publication Year: 2005, Page(s): 0_22
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  • Invited conferences

    Publication Year: 2005, Page(s): 1
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  • [Blank page]

    Publication Year: 2005, Page(s): 2
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  • Plastic microelectronics with organic and polymeric thin film transistors

    Publication Year: 2005, Page(s):3 - 6
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (617 KB) | HTML iconHTML

    In this paper, some important experimental results in organic and polymeric thin film transistors (TFTs) for plastic microelectronics are reviewed. Special emphasis is given to the charge transport properties of the transistors and the difficulties in interpreting the range of experimental results using standard inorganic silicon MOSFET theory and modifications of it. Further, difficulties associa... View full abstract»

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  • Ultraviolet and visible nitride photodetectors: applications

    Publication Year: 2005, Page(s):7 - 10
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (731 KB) | HTML iconHTML

    One of the main interests of wide-bandgap materials such as diamond, III-nitrides or SiC is their intrinsic ability to perform selective ultraviolet detection. Over the rest, III-nitrides present the undoubted advantage of tuning the absorption edge in a wide spectral range by varying the Al and In mole fractions in AlGaN and InGaN ternary alloys. This property makes them suited for many applicati... View full abstract»

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  • Organic electronic devices: overview and future trends

    Publication Year: 2005, Page(s):11 - 14
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (530 KB) | HTML iconHTML

    Organic electronic devices have lately attracted much attention as viable alternatives to inorganic ones. Neither high temperature steps nor expensive deposition equipments are required to fabricate competitive organic devices. Low cost, lightness and flexibility are some of the advantages in these novel devices. This paper briefly reviews some successful results on this new research area, particu... View full abstract»

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  • GaN-based devices

    Publication Year: 2005, Page(s):15 - 18
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (628 KB) | HTML iconHTML

    We review the history, potential applications and characteristics of GaN-based devices, including devices based on polarization effects, such as pyroelectric and piezoelectric sensors and oscillating electron and hole islands in semiconductor grains embedded into a pyroelectric matrix; GaN-based heterostructure field effect transistors (HFETs); SAW and acousto-optics devices; UV light emitting dio... View full abstract»

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  • Devices and microsystems in the automotive industry

    Publication Year: 2005, Page(s):19 - 22
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (558 KB) | HTML iconHTML

    The advances in semiconductor design and development and manufacturing processes enable the integration, in the same device or in the same package, of analog, digital and power devices using single and multi-die solutions. In last years these technologies have evolved rapidly, extending voltage capability and integrating highly complex subsystems such as communication controllers or microcontrolle... View full abstract»

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  • Carbon nanotubes and their application to molecular electronics

    Publication Year: 2005, Page(s):23 - 26
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (701 KB) | HTML iconHTML

    Carbon nanotubes have proved their enormous potential as a new advanced material. Their mechanical and electronic properties can be used to improve the properties of structural polymers and molecular electronic devices. It is necessary to improve the growth techniques towards a controlled, self-organized fabrication procedure in order to obtain useful applications. PECVD growth of aligned carbon n... View full abstract»

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  • Characterization and reliability of electronic devices

    Publication Year: 2005, Page(s): 27
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    Publication Year: 2005, Page(s): 28
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  • A comparative study of atomic layer deposited advanced high-k dielectrics

    Publication Year: 2005, Page(s):29 - 32
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (518 KB) | HTML iconHTML

    A comparative electrical characterization of metal-insulator-semiconductor (MIS) structures fabricated from atomic layer deposited (ALD) Al/sub 2/O/sub 3/, Ta/sub 2/O/sub 5/ and Nb/sub 2/O/sub 5/-Ta/sub 2/O/sub 5/-Nb/sub 2/O/sub 5/ dielectric thin films on silicon substrates has been carried out. The interface states as well as defects inside the insulator bulk were measured by using capacitance-v... View full abstract»

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