Current-voltage characteristics of electron irradiated polycrystalline Au/CdSe/Au thin layers

Polycrystalline thin CdSe layers, obtained by thermal-vacuum deposition on glass substrate at temperature of 220/spl deg/C, were subjected to two consecutive sessions of irradiation with 7 MeV electrons to fluences of 2 /spl times/ 10/sup 15/ and 4 /spl times/ 10/sup 15/ electrons/cm/sup 2/, respectively. After irradiation, the electrical properties of polycrystalline thin CdSe films, sandwiched between two gold electrodes, were investigated by current voltage measurements. Under low-voltages, Ohm's law is followed with an electron mobility /spl mu/ of 52 cm/sup 2/V/sup -1/ s/sup -1/ and a room temperature electrical conductivity /spl sigma//sub 0/ of 4,627 /spl times/ 10/sup -5/ /spl Omega//sup -1/ cm/sup -1/. At high-applied voltages, there is a space-charge limited conductivity (SCLC) controlled by an uniform trap distribution with density per unit energy range /spl rho/(E) of 2.39 /spl times/ 10/sup 14/ cm/sup -3/ eV/sup -1/.