Characterization of SiC thin films grown on Si by inductively coupled plasma chemical vapor deposition at low temperatures

A SiC thin film has been grown on an Si[100] substrate by means of Inductively Coupled Plasma Chemical Vapor Deposition under experimental conditions of different growth temperatures, mass flow rates of SiH/sub 4/ and CH/sub 4/, and varied RF frequencies and powers. SiC samples were analyzed by FTIR EPMA and by TEM. We have achieved the growth of SiC crystalline thin films at 200/spl deg/C with varying C/Si atomic ratios at a grain size of 1 /spl mu/m and growth rate of 2 /spl mu/m per hour using an RF frequency of 51.2 MHz and increased RF plasma power.