Gas source MBE growth of TlInGaAs layers on GaAs substrates

New alloy semiconductor heterostructures TlInGaAsN/AlGaAs are proposed to fabricate 1.3-1.55 /spl mu/m wavelength laser diodes with temperature-stable threshold currents and temperature-stable lasing wavelengths. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH) and multi-hetero (HD) structures were grown on GaAs substrates by gas source molecular-beam epitaxy (MBE). Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high energy electron diffraction (RHEED) intensity oscillation. Red shift of the photoluminescence (PL) peak energy was also observed for TlInGaAs/GaAs DW and MH samples, which agrees with the incorporation of Tl.