High-efficiency O-band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor

We demonstrated O-band InGaAsP/Si hybrid MOS optical modulators using direct wafer bonding with a thin Al
₂
O
₃
bonding interface. Owing to the large electron-induced refractive index change in InGaAsP, we successfully achieved V
_π
L of 0.094 Vcm.