Optimal design of Ge-dot photoMOSFETs for highly-integrated monolithic Si photonics

Ge-dot/SiO
₂
/SiGe-channel photoMOSFETs are demonstrated on Si substrate. A decrease in the dot size and gate oxide thickness significantly enhances the photoresponsivity (9000A/W) with 6nW under 850nm illumination, and improves response time (0.48ns) and power consumption.