Strain-compensated MQW InGaAsP/InGaAsP gain- and index-coupled laser arrays grown by MOVPE under N/sub 2/

Buried index-coupled and gain-coupled distributed feedback (DFB) lasers (/spl lambda/=1.55 /spl mu/m) and laser arrays with wavelength spacing between channels of 1.6 nm and 3.2 nm have been realized and investigated on different strain-compensated InGaAsP/InGaAsP MQW structures. Which are grown on InP by MOVPE with constant As/P ratio under N/sub 2/ as carrier gas for the first time. The grown structures exhibit an extremely good wavelength homogeneity (/spl sigma/=0.75 nm). The lowest threshold current of 2.3 mA at 20/spl deg/C has been obtained for uncoated index-coupled DFB lasers. More than 10 mW CW and 70 mW pulsed output power are achieved at an injection current of 200 mA from one facet of a DFB laser with AR coating.