Use of CdZnTe pixel arrays with multiplexer readout to map detector crystal properties

We demonstrate the use of pixel arrays to map CdZnTe detector materials properties in situ. Our readout technique uses a multiplexer containing a gated integrator and is sensitive to DC currents. We have made extensive measurements of leakage current in one Cd/sub 0.9/Zn/sub 0.1/Te hybrid detector array that has size 25/spl times/25/spl times/1.5 mm/sup 3/ and 380 /spl mu/m pixel pitch. The pixel I-V curves are essentially ohmic and the leakage pattern is qualitatively similar at different temperatures. Histograms of pixel resistivity are relatively flat in the range 5-60 G/spl Omega/ cm. Pixel Arrhenius plots have slopes that differ with pixel resistivity.