A single-chip integration approach of switching cells suitable for medium power applications

This paper deals with the monolithic integration of switching cells that are used in power electronics for the realization of static power converters. The aim of the monolithic integration of the power switching cells is to suppress wire bonding in order to improve electrical performance as well as reliability of power modules intended for medium power applications. Within this context, the single chip integration approach presented in this paper constitutes a solution and a promising approach that combines judiciously multiple reverse conducting IGBT switches in a single Si-chip. The operating modes of the integrated structure are validated in an inverter application using 2D Sentaurus simulations. The targeted packaging of the single chip converter on DBC/IMS substrates doesn't use any wire bonding and doesn't exhibit any dv/dt stress directly on the DBC/IMS substrates.