Unified charge model for short-channel junctionless double gate MOSFETs

A 2D physics-based model for short-channel junctionless double gate (DG) MOSFETs is presented. From a closed-form solution for the 2D potential we derive explicit equations for the calculation of threshold voltage V
_T
and subthreshold slope S. A unified charge model valid for all operating regimes is developed by using Lambert's W-function, and a standard smoothing function for the transition between depletion and accumulation region. The model for the potential is derived with the help of Poisson's equation and the conformal mapping technique by Schwarz-Christoffel. Dependencies between the physical device parameters and their impact on the device performance are worked out. A comparison of our 2D physics-based model is done versus 2D TCAD Sentaurus simulation data.