Flexfet: Independently-Double-Gated SOI Transistor With Variable Vt and 0.5V Operation Achieving Near Ideal Subthreshold Slope

Manufacture of Flexfettrade CMOS with excellent dynamic threshold control has been demonstrated. Flexfettrade transistors operating at 0.5 V in DG mode have demonstrated a near ideal subthreshold slope of 64 mV/decade and an I
_on
/I
_off
ratio of 10
⁶
. In IDG mode, the Flexfettrade bottom gate provides a wide range of dynamic Vt adjustment enabling flexible device configurability for future ultra-low-power designs.