Ka-band high efficiency 1 watt power amplifier

The authors describe the design and performance of a miniaturized 35-GHz power amplifier. The two-stage amplifier has achieved an output power of 1 W with an associated gain of 10 dB and a power-added efficiency of 25.1%. The design is based on a TRW 0.25- mu m T-gate pseudomorphic InGaAs high electron mobility transistor (HEMT) device technology. The amplifier was designed using a 1-mm device driving a 2-mm device. The complete amplifier mounted on a carrier is 0.26 in*0.16 in*0.02 in. The amplifier results reported here represent the best power gain and efficiency performances achieved from a single amplifier at 35 GHz.<
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