In-situ etching of InP and related P materials in MOVPE chamber using PCl/sub 3/

In this work, we investigate in-situ etching of InP, InGaAsP and InGaAlAs inside a MOVPE chamber for various etching conditions. Phosphorus Trichloride (PCl/sub 3/) has been used in gaseous form for etching. Precise control of the vertical and lateral etching as a function of the etch conditions has been achieved. With SiO/sub 2/ stripes, mesa shapes with smooth non re-entrant sidewall 111 planes were formed in a large range of etch temperatures and pressures. Deep selective area mesa etching (4 micron) followed by regrowth having excellent surface morphology and perfect planarity were obtained.