Soft‐switching SiC Three‐phase Grid Inverter

This chapter introduces silicon‐carbon (SiC) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) three‐phase inverter with zero‐voltage‐switching space‐vector‐modulation technique to further push the power density of SiC inverter. SiC MOSFET brings the opportunities of increasing the conversion efficiency, switching frequency, and power density of three‐phase grid inverter in comparison with its Si insulated gate bipolar transistor counterpart. The chapter compares the loss distributions, conversion efficiency, and volume of passive components between the hard‐switching SiC inverter and the soft‐switching SiC inverter under wide switching frequency range. The resonant inductor of soft‐switching three‐phase SiC inverter operating with hundreds of kHz switching frequency and large current amplitude is a critical component to the whole system. The chapter also introduces and evaluates a 7‐in‐1 SiC MOSFET module with low stray inductance with both simulations and experiments.