Applications of III–V Semiconductors for Mid‐infrared Lasers

Mid‐infrared semiconductor lasers operating at room temperature with emission wavelengths beyond 2 µm have gathered much interest because of their applications in chemical analyses, remote sensing, and biomedicals. In this chapter, recent advances in molecular beam epitaxy‐grown GaSb‐based lasers, InP‐based lasers, and InAs‐based lasers operating at mid‐infrared wavelength are described, where various kinds of quantum‐well active layers are used.